Patents by Inventor Guangan YANG

Guangan YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • IGZO THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
    Publication number: 20220367722
    Abstract: An IGZO thin-film transistor and a method for manufacturing same. The method comprises: acquiring a substrate; forming an IGZO layer on the substrate by means of a solution process; doping V impurities on a surface of the IGZO layer by means of a spin doping process; forming a source electrode at one side of the IGZO layer, and forming a drain electrode at the other side thereof; forming a gate dielectric layer on the doped IGZO layer; and forming a gate electrode on the gate dielectric layer.
    Type: Application
    Filed: August 26, 2020
    Publication date: November 17, 2022
    Inventors: Wangran WU, Guangan YANG, Feng LIN, Guipeng SUN, Yaohui WANG, Weifeng SUN, Longxing SHI