Abstract: A corrugated pipe connection device for a continuous section at the top of a continuous T-shaped beam bridge pier. The connection device includes a combined steel pipe telescopic device and a corrugated pipe connector, the interiors being hollow; the connector includes a first clamping member for clamping a wall surface of a corrugated pipe; one end of the telescopic device is a second clamping member with the same structure as the first; the other end is a telescopic steel pipe which is telescopic in the length direction; and the telescopic steel pipe is connected to the connector. The device replaces a corrugated pipe between two T-shaped beams, thereby avoiding problems such as breakage and slurry leakage caused by an original construction mode. The device can stretch out and draw back according to a distance between the T-shaped beams, and steel strands can be stranded by means of a stranding machine.

Abstract: The MOS device with resistive field plate for realizing conductance modulation field effect in the present invention is based on the existing trench gate MOS device, and a semi-insulating resistive field plate electrically connected to the trench gate structure and the drain structure is added in the drift region, where the trench gate structure can control the on-off of the MOS channel, and the semi-insulating resistive field plate can adjust the doping concentration of the drift region to modulate the conductance of the on-state drift region and the distribution of off-state high-voltage blocking electric field, thus a lower on-resistance can be obtained. In addition, the modern 2.5-dimensional processing technology based on deep trench etching is adopted in the present invention, which is conducive to the miniaturization design and high density design of the structure and is more suitable for the More than Moore (beyond Moore) development of modern integrated semiconductor devices.

Abstract: A shared-dielectric MOSFET device with a resistive-field-plate and a preparation method are provided. In the shared-dielectric MOSFET device, the semi-insulating resistive-field-plate electrically connected to the trench gate structure and the drain structure is introduced in the drift region of the existing trench gate MOS devices, and when the trench gate structure controls the MOS channel to be turned on or turned off, the semi-insulating resistive-field-plate can adjust the doping concentration of the drift region, to modulate the conductance of the on-state drift region and the distribution of a off-state high-voltage blocking electric field, thereby obtaining a lower on-resistance. Meanwhile, in the preparation method of the present disclosure, the modern 2.

Abstract: A device for assisting navigation including a body defining a middle portion having a first end and a second end, a handle portion at one of the first or second ends, a holder that is removably mounted with another end of the first or second ends of the body.

Abstract: A device for assisting navigation including a body defining a middle portion having a first end and a second end, a handle portion at one of the first or second ends, a holder that is removably mounted with another end of the first or second ends of the body.