Patents by Inventor GUANGCAI FU
GUANGCAI FU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948845Abstract: The present disclosure relates to a device and a system for testing flatness. The device for testing flatness includes a base, a testing platform, and a ranging sensor. The testing platform is assembled on the base. The testing platform includes a supporting structure. The supporting structure is disposed on the side of the testing platform away from the base and is used to support a to-be-tested board. The structure matches the structure of the to-be-tested board. The ranging sensor is disposed on the side of the testing platform away from the base. After the to-be-tested board is placed on the testing platform, the ranging sensor is used to test distances between a number N of to-be-tested positions on the to-be-tested board and the ranging sensor, to obtain N pieces of distance information, and the N pieces of distance information are used to determine the flatness of the to-be-tested board, where N is an integer greater than 2.Type: GrantFiled: September 23, 2021Date of Patent: April 2, 2024Assignee: BOE Technology Group Co., Ltd.Inventors: Shaodong Sun, Haoran Gao, Guangcai Yuan, Lilei Zhang, Wenyue Fu, Li Li, Hanbo Zheng, Shuqi Liu, Qi Qi, Junwei Yan, Pingkuan Gu, Lina Jing, Yan Chen, Yimin Chen
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Patent number: 11926499Abstract: A folding device is provided. The folding device includes a bearing and fixing mechanism (1) configured to bear and fix a main body portion (21) of a to-be-folded device (2); a folding mechanism (3) located on at least one side of the bearing and fixing mechanism (1), the folding mechanism (3) being rotatably connected to the bearing and fixing mechanism (1) and configured to bear and fix a to-be-folded portion (22) of the to-be-folded device (2); and a driving mechanism (4) connected to the folding mechanism (3), the driving mechanism (4) being configured to drive the folding mechanism (3) to turn relative to the bearing and fixing mechanism (1), so as to fold the to-be-folded portion (22) to a side in a thickness direction of the main body portion (21). The folding device can fold automatically, and manual folding is avoided.Type: GrantFiled: April 9, 2021Date of Patent: March 12, 2024Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Shuqi Liu, Xinhong Lu, Wenyue Fu, Haoran Gao, Guangcai Yuan, Li Li, Shaodong Sun, Song Fang, Dongfeng Du, Qi Qi
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Patent number: 11510011Abstract: A microphone and its manufacturing method, relating the semiconductor techniques, are presented. The microphone comprises: a substrate comprising an opening, a first electrode layer at the bottom of the opening, and at least one groove adjacent to the first electrode layer, with the groove and the opening on two opposing sides of a bottom surface of the first electrode layer; a separation material layer filling the groove; and a second electrode layer on the separation material layer, wherein the first electrode layer, the separation material layer, and the second electrode layer form a cavity. In this inventive concept, the separation material layer on the groove works as an anchor node embedding in the substrate to increases the effective contact area and the bonding power, and to improve the bonding quality between the second electrode layer and the substrate, which results in a strengthened second electrode layer.Type: GrantFiled: October 1, 2020Date of Patent: November 22, 2022Inventor: GuangCai Fu
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Publication number: 20210021938Abstract: A microphone and its manufacturing method, relating the semiconductor techniques, are presented. The microphone comprises: a substrate comprising an opening, a first electrode layer at the bottom of the opening, and at least one groove adjacent to the first electrode layer, with the groove and the opening on two opposing sides of a bottom surface of the first electrode layer; a separation material layer filling the groove; and a second electrode layer on the separation material layer, wherein the first electrode layer, the separation material layer, and the second electrode layer form a cavity. In this inventive concept, the separation material layer on the groove works as an anchor node embedding in the substrate to increases the effective contact area and the bonding power, and to improve the bonding quality between the second electrode layer and the substrate, which results in a strengthened second electrode layer.Type: ApplicationFiled: October 1, 2020Publication date: January 21, 2021Inventor: GuangCai FU
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Patent number: 10834509Abstract: A microphone and its manufacturing method, relating the semiconductor techniques, are presented. The microphone comprises: a substrate comprising an opening, a first electrode layer at the bottom of the opening, and at least one groove adjacent to the first electrode layer, with the groove and the opening on two opposing sides of a bottom surface of the first electrode layer; a separation material layer filling the groove; and a second electrode layer on the separation material layer, wherein the first electrode layer, the separation material layer, and the second electrode layer form a cavity. In this inventive concept, the separation material layer on the groove works as an anchor node embedding in the substrate to increases the effective contact area and the bonding power, and to improve the bonding quality between the second electrode layer and the substrate, which results in a strengthened second electrode layer.Type: GrantFiled: March 19, 2018Date of Patent: November 10, 2020Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATIONInventor: GuangCai Fu
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Patent number: 10633247Abstract: A semiconductor device and its manufacturing method, relating the semiconductor techniques. The semiconductor device manufacturing method comprises: providing a first semiconductor structure, wherein the first semiconductor structure comprises a first part comprising a plurality of films separated from each other, and a first bonding component on the first part; forming an anti-stick layer on the first part covering the plurality of films; providing a second semiconductor structure comprising a second part and a second bonding component on the second part; and bonding the first bonding component with the second bonding component, so that the first part is bonded to the second part. This inventive concept prevents the adhesion of neighboring films in a semiconductor device.Type: GrantFiled: June 5, 2019Date of Patent: April 28, 2020Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATIONInventor: GuangCai Fu
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Patent number: 10629808Abstract: A method for forming a phase change random access memory is provided. The method includes providing a substrate having a surface; and forming a dielectric layer on the surface of the substrate. The method also includes forming a through-hole penetrating through the dielectric layer; and forming an adhesion layer on inner surface of the through-hole. Further, the method includes forming a metal layer doped with inorganic ions on the adhesion layer to reduce over-etching of the metal layer and increase heating efficiency of the metal layer on the surface of the adhesion layer; and forming a phase change layer on the dielectric layer, the adhesion layer and the doped metal layer.Type: GrantFiled: July 30, 2015Date of Patent: April 21, 2020Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Zhichao Li, Guangcai Fu
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Publication number: 20190284044Abstract: A semiconductor device and its manufacturing method, relating the semiconductor techniques. The semiconductor device manufacturing method comprises: providing a first semiconductor structure, wherein the first semiconductor structure comprises a first part comprising a plurality of films separated from each other, and a first bonding component on the first part; forming an anti-stick layer on the first part covering the plurality of films; providing a second semiconductor structure comprising a second part and a second bonding component on the second part; and bonding the first bonding component with the second bonding component, so that the first part is bonded to the second part. This inventive concept prevents the adhesion of neighboring films in a semiconductor device.Type: ApplicationFiled: June 5, 2019Publication date: September 19, 2019Inventor: GuangCai FU
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Patent number: 10351421Abstract: A semiconductor device and its manufacturing method, relating the semiconductor techniques. The semiconductor device manufacturing method comprises: providing a first semiconductor structure, wherein the first semiconductor structure comprises a first part comprising a plurality of films separated from each other, and a first bonding component on the first part; forming an anti-stick layer on the first part covering the plurality of films; providing a second semiconductor structure comprising a second part and a second bonding component on the second part; and bonding the first bonding component with the second bonding component, so that the first part is bonded to the second part. This inventive concept prevents the adhesion of neighboring films in a semiconductor device.Type: GrantFiled: March 16, 2018Date of Patent: July 16, 2019Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATIONInventor: GuangCai Fu
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Publication number: 20180279058Abstract: A microphone and its manufacturing method, relating the semiconductor techniques, are presented. The microphone comprises: a substrate comprising an opening, a first electrode layer at the bottom of the opening, and at least one groove adjacent to the first electrode layer, with the groove and the opening on two opposing sides of a bottom surface of the first electrode layer; a separation material layer filling the groove; and a second electrode layer on the separation material layer, wherein the first electrode layer, the separation material layer, and the second electrode layer form a cavity. In this inventive concept, the separation material layer on the groove works as an anchor node embedding in the substrate to increases the effective contact area and the bonding power, and to improve the bonding quality between the second electrode layer and the substrate, which results in a strengthened second electrode layer.Type: ApplicationFiled: March 19, 2018Publication date: September 27, 2018Inventor: GuangCai Fu
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Publication number: 20180265352Abstract: A semiconductor device and its manufacturing method, relating the semiconductor techniques. The semiconductor device manufacturing method comprises: providing a first semiconductor structure, wherein the first semiconductor structure comprises a first part comprising a plurality of films separated from each other, and a first bonding component on the first part; forming an anti-stick layer on the first part covering the plurality of films; providing a second semiconductor structure comprising a second part and a second bonding component on the second part; and bonding the first bonding component with the second bonding component, so that the first part is bonded to the second part. This inventive concept prevents the adhesion of neighboring films in a semiconductor device.Type: ApplicationFiled: March 16, 2018Publication date: September 20, 2018Inventor: GuangCai FU
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Patent number: 9875965Abstract: Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.Type: GrantFiled: July 14, 2016Date of Patent: January 23, 2018Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONInventors: Guangcai Fu, Tianlun Yang, Xiaoping Zhang
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Patent number: 9751750Abstract: A semiconductor device having a capacitive pressure sensor structure includes a substrate, an interlayer dielectric layer on the substrate, a bottom electrode of a pressure sensor within the interlayer dielectric layer, a pressure sensing cavity above the bottom electrode, a sensing film above the pressure sensing cavity and covering a portion of the interlayer dielectric layer, a cover layer on the interlayer dielectric layer and on the sensing film, the cover layer having an opening exposing a portion of the sensing film, and a high thermal expansion coefficient material layer disposed on cover layer and sidewalls of the opening. Through the use of the high thermal expansion coefficient material layer, the capacitive pressure sensor structure is not susceptible to changes in ambient temperature to enhance the sensitivity of the capacitive pressure sensor structure.Type: GrantFiled: May 13, 2015Date of Patent: September 5, 2017Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Xianming Zhang, Guangcai Fu
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Patent number: 9573805Abstract: A method of manufacturing a pressure sensor is provided. The method includes: providing a substrate, wherein a bottom electrode and a pressure sensing film are disposed on the substrate; forming an etch stop assembly on the pressure sensing film at a location corresponding to a pressure trench; forming a cover layer on the substrate covering the etch stop assembly and the pressure sensing film; forming a mask layer on the cover layer, wherein an opening of the mask layer is formed above the etch stop assembly and exposes a portion of the cover layer at the location corresponding to the pressure trench; etching the cover layer using the mask layer so as to form the pressure trench in the cover layer; removing the etch stop assembly at a bottom of the pressure trench; and removing the mask layer.Type: GrantFiled: May 15, 2015Date of Patent: February 21, 2017Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Guangcai Fu, Haiyong Ni
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Publication number: 20160322303Abstract: Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.Type: ApplicationFiled: July 14, 2016Publication date: November 3, 2016Inventors: GUANGCAI FU, TIANLUN YANG, XIAOPING ZHANG
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Patent number: 9416004Abstract: Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.Type: GrantFiled: January 13, 2015Date of Patent: August 16, 2016Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONInventors: Guangcai Fu, Tianlun Yang, Xiaoping Zhang
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Publication number: 20160064657Abstract: A method for forming a phase change random access memory is provided. The method includes providing a substrate having a surface; and forming a dielectric layer on the surface of the substrate. The method also includes forming a through-hole penetrating through the dielectric layer; and forming an adhesion layer on inner surface of the through-hole. Further, the method includes forming a metal layer doped with inorganic ions on the adhesion layer to reduce over-etching of the metal layer and increase heating efficiency of the metal layer on the surface of the adhesion layer; and forming a phase change layer on the dielectric layer, the adhesion layer and the doped metal layer.Type: ApplicationFiled: July 30, 2015Publication date: March 3, 2016Inventors: ZHICHAO LI, GUANGCAI FU
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Publication number: 20160009546Abstract: A semiconductor device having a capacitive pressure sensor structure includes a substrate, an interlayer dielectric layer on the substrate, a bottom electrode of a pressure sensor within the interlayer dielectric layer, a pressure sensing cavity above the bottom electrode, a sensing film above the pressure sensing cavity and covering a portion of the interlayer dielectric layer, a cover layer on the interlayer dielectric layer and on the sensing film, the cover layer having an opening exposing a portion of the sensing film, and a high thermal expansion coefficient material layer disposed on cover layer and sidewalls of the opening. Through the use of the high thermal expansion coefficient material layer, the capacitive pressure sensor structure is not susceptible to changes in ambient temperature to enhance the sensitivity of the capacitive pressure sensor structure.Type: ApplicationFiled: May 13, 2015Publication date: January 14, 2016Inventors: XIANMING ZHANG, GUANGCAI FU
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Publication number: 20150368096Abstract: A method of manufacturing a pressure sensor is provided. The method includes: providing a substrate, wherein a bottom electrode and a pressure sensing film are disposed on the substrate; forming an etch stop assembly on the pressure sensing film at a location corresponding to a pressure trench; forming a cover layer on the substrate covering the etch stop assembly and the pressure sensing film; forming a mask layer on the cover layer, wherein an opening of the mask layer is formed above the etch stop assembly and exposes a portion of the cover layer at the location corresponding to the pressure trench; etching the cover layer using the mask layer so as to form the pressure trench in the cover layer; removing the etch stop assembly at a bottom of the pressure trench; and removing the mask layer.Type: ApplicationFiled: May 15, 2015Publication date: December 24, 2015Inventors: Guangcai FU, Haiyong NI
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Publication number: 20150203351Abstract: Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.Type: ApplicationFiled: January 13, 2015Publication date: July 23, 2015Inventors: GUANGCAI FU, TIANLUN YANG, XIAOPING ZHANG