Abstract: Disclosed herein are systems and methods for cleaning a ceramic article using a stream of solid carbon dioxide (CO2) particles. A method includes flowing liquid CO2 into a spray nozzle, and directing a first stream of solid CO2 particles from the spray nozzle toward a ceramic article for a first time duration to clean the ceramic article. The liquid CO2 is converted into the first stream of solid CO2 particles upon exiting the spray nozzle. The first stream of solid CO2 particles causes a layer of solid CO2 to be formed on the ceramic article. After the layer of solid CO2 has sublimated, a second stream of solid CO2 particles is directed from the spray nozzle toward the ceramic article for at least one of the first time duration or a second time duration to further clean the ceramic article.

Abstract: Disclosed herein are systems and methods for cleaning a ceramic article using a stream of solid carbon dioxide (CO2) particles. A method includes flowing liquid CO2 into a spray nozzle, and directing a first stream of solid CO2 particles from the spray nozzle toward a ceramic article for a first time duration to clean the ceramic article. The liquid CO2 is converted into the first stream of solid CO2 particles upon exiting the spray nozzle. The first stream of solid CO2 particles causes a layer of solid CO2 to be formed on the ceramic article. After the layer of solid CO2 has sublimated, a second stream of solid CO2 particles is directed from the spray nozzle toward the ceramic article for at least one of the first time duration or a second time duration to further clean the ceramic article.

Abstract: Methods are provided for depositing a stack of film layers for use in vertical gates for 3D memory devices, by depositing a sacrificial nitride film layer at a sacrificial film deposition temperature greater than about 550° C.; depositing an oxide film layer over the nitride film layer, at an oxide deposition temperature of about 600° C. or greater; repeating the above steps to deposit a film stack having alternating layers of the sacrificial films and the oxide films; forming a plurality of holes in the film stack; and depositing polysilicon in the plurality of holes in the film stack at a polysilicon process temperature of about 700° C. or greater, wherein the sacrificial film layers and the oxide film layers experience near zero shrinkage during the polysilicon deposition. Flash drive memory devices may also be made by these methods.

Abstract: A method for an intrinsic type microcrystalline silicon layer is provided. In one embodiment, a method for forming an intrinsic type microcrystalline silicon layer includes dynamically ramping up a silane gas supplied in a gas mixture to a surface of a substrate disposed in a processing chamber, dynamically ramping down a RF power applied in the gas mixture supplied to the processing chamber to form a plasma in the gas mixture, and forming an intrinsic type microcrystalline silicon layer on the substrate.

Abstract: Terahertz emitting devices are disclosed. The terahertz emitting device comprises a wafer and a current source. The wafer includes silicon carbide and a dopant. In particular, the wafer may consist of 6H silicon carbide; a nitrogen dopant having a concentration of approximately 1018 cm?3; a boron dopant having a concentration of approximately 1016 cm?3; and an aluminum dopant having a concentration of approximately 1015 cm?3. The current source is electrically coupled to the wafer. The wafer emits radiation having a frequency between approximately 1 THz and 20 THz when driven by the current source.