Patents by Inventor Guanghai Xu

Guanghai Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • 1H-PYRROLO[2,3-C]PYRIDINE COMPOUNDS AND APPLICATION THEREOF
    Publication number: 20230357241
    Abstract: A series of 1H-pyrrolo[2,3-c]pyridine compounds and an application thereof are provided. The compounds include those represented by formula (P) and a pharmaceutically acceptable salt thereof.
    Type: Application
    Filed: September 24, 2021
    Publication date: November 9, 2023
    Inventors: Wenyuan QIAN, Xiawei WEI, Chundao YANG, Guanghai XU, Ning JIANG, Shuhui CHEN
  • Heterocyclic compound as CSF-1R inhibitor and use thereof
    Patent number: 11384065
    Abstract: The present invention relates to a class of isoindolinone derivatives and use thereof in the preparation of a medicament for treating diseases associated with a novel colony stimulating factor 1 receptor (CSF-1R) inhibitor. In particular, the present invention relates to a compound of formula (I) and a pharmaceutically acceptable salt thereof or a stereoisomer thereof.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: July 12, 2022
    Assignee: MEDSHINE DISCOVERY INC.
    Inventors: Wenyuan Qian, Chundao Yang, Guanghai Xu, Jie Li, Jian Li, Shuhui Chen
  • Prostacyclin receptor agonist
    Patent number: 11299475
    Abstract: A compound represented by formula (I) or an isomer or a pharmaceutically acceptable salt thereof. The present invention also relates to an application of the same in preparing a drug for treating a disease related to a PGI2 receptor.
    Type: Grant
    Filed: February 2, 2019
    Date of Patent: April 12, 2022
    Assignee: MEDSHINE DISCOVERY INC.
    Inventors: Wenyuan Qian, Chundao Yang, Guanghai Xu, Jian Li, Shuhui Chen
  • MEDICAL USE OF PROSTACYCLIN RECEPTOR AGONIST
    Publication number: 20210338665
    Abstract: The present disclosure provides application of a compound in conformity with a general formula I, and an isomer or pharmaceutically acceptable salt thereof to preparation of a medicinal composition for treating and/or preventing a high altitude disease. The high altitude disease is selected from an acute high altitude disease or a chronic high altitude disease generated in a high altitude environment with an altitude of 2,000 m or above.
    Type: Application
    Filed: June 5, 2019
    Publication date: November 4, 2021
    Applicants: CHINESE PLA GENERAL HOSPITAL, SHIJIAZHUANG SAGACITY NEW DRUG DEVELOPMENT COMPANY, LTD.
    Inventors: Kunlun HE, Zeyu ZHANG, Xiaojian GAO, Chunlei LIU, Xin LI, Chen LI, Wenyuan QIAN, Chundao YANG, Guanghai XU, Yiwei WANG
  • Salts and crystal forms of diaza-benzofluoranthrene compounds
    Patent number: 11124506
    Abstract: The present invention discloses to a hydrochloride salt, a citrate salt, a phosphate salt or a sulfate salt of compound 1, the crystal forms of the aforementioned salts, and a preparation method thereof. The present invention also relates their use in the preparation of a medicament for the treatment of cerebral apoplexy or epilepsy.
    Type: Grant
    Filed: August 3, 2017
    Date of Patent: September 21, 2021
    Assignee: HARBIN PHARMACEUTICAL GROUP CO., LTD. GENERAL PHARMACEUTICAL FACTORY
    Inventors: Qingqing Lu, Shenyi Shi, Tiezhong Bai, Shujie Yuan, Zhengwu Li, Qiaofen Hu, Yijie Cao, Jing Gao, Hui Ding, Jinhua Li, Guanghai Xu, Zheng Wang, Xin Jin
  • HETEROCYCLIC COMPOUND AS CSF-1R INHIBITOR AND USE THEREOF
    Publication number: 20210107894
    Abstract: The present invention relates to a class of isoindolinone derivatives and use thereof in the preparation of a medicament for treating diseases associated with a novel colony stimulating factor 1 receptor (CSF-1R) inhibitor. In particular, the present invention relates to a compound of formula (I) and a pharmaceutically acceptable salt thereof or a stereoisomer thereof.
    Type: Application
    Filed: January 3, 2019
    Publication date: April 15, 2021
    Applicants: MEDSHINE DISCOVERY INC., MEDSHINE DISCOVERY INC.
    Inventors: Wenyuan QIAN, Chundao YANG, Guanghai XU, Jie LI, Jian LI, Shuhui CHEN
  • PROSTACYCLIN RECEPTOR AGONIST
    Publication number: 20210087168
    Abstract: A compound represented by formula (I) or an isomer or a pharmaceutically acceptable salt thereof. The present invention also relates to an application of the same in preparing a drug for treating a disease related to a PGI2 receptor.
    Type: Application
    Filed: February 2, 2019
    Publication date: March 25, 2021
    Inventors: Wenyuan QIAN, Chundao YANG, Guanghai XU, Jian LI, Shuhui CHEN
  • SALTS AND CRYSTAL FORMS OF DIAZA-BENZOFLUORANTHRENE COMPOUNDS
    Publication number: 20190169183
    Abstract: The present invention discloses to a hydrochloride salt, a citrate salt, a phosphate salt or a sulfate salt of compound 1, the crystal forms of the aforementioned salts, and a preparation method thereof. The present invention also relates their use in the preparation of a medicament for the treatment of cerebral apoplexy or epilepsy.
    Type: Application
    Filed: August 3, 2017
    Publication date: June 6, 2019
    Inventors: Qingqing Lu, Shenyi Shi, Tiezhong Bai, Shujie Yuan, Zhengwu Li, Qiaofen Hu, Yijie Cao, Jing Gao, Hui Ding, Jinhua Li, Guanghai Xu, Zheng Wang, Xin Jin
  • Debond interconnect structures
    Patent number: 9461010
    Abstract: The present subject matter relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming an interconnect that has a portion thereof which becomes debonded from the microelectronic device during cooling after attachment to an external device. The debonded portion allows the interconnect to flex and absorb stress.
    Type: Grant
    Filed: January 18, 2016
    Date of Patent: October 4, 2016
    Assignee: Intel Corporation
    Inventors: Qing Ma, Jun He, Patrick Morrow, Paul B. Fischer, Sridhar Balakrishnan, Satish Radhakrishnan, Tatyana Andryushchenko, Guanghai Xu
  • DEBOND INTERCONNECT STRUCTURES
    Publication number: 20160133596
    Abstract: The present subject matter relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming an interconnect that has a portion thereof which becomes debonded from the microelectronic device during cooling after attachment to an external device. The debonded portion allows the interconnect to flex and absorb stress.
    Type: Application
    Filed: January 18, 2016
    Publication date: May 12, 2016
    Applicant: Intel Corporation
    Inventors: Qing Ma, Jun He, Patrick Morrow, Paul B. Fischer, Sridhar Balakrishnan, Satish Radhakrishnan, Tatyana Andryushchenko, Guanghai Xu
  • Debond interconnect structures
    Patent number: 9269686
    Abstract: The present subject matter relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming an interconnect that has a portion thereof which becomes debonded from the microelectronic device during cooling after attachment to an external device. The debonded portion allows the interconnect to flex and absorb stress.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: February 23, 2016
    Assignee: Intel Corporation
    Inventors: Qing Ma, Jun He, Patrick Morrow, Paul B. Fischer, Sridhar Balakrishnan, Satish Radhakrishnan, Tatyana T. Adryushchenko, Guanghai Xu
  • DEBOND INTERCONNECT STRUCTURES
    Publication number: 20140106560
    Abstract: The present subject matter relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming an interconnect that has a portion thereof which becomes debonded from the microelectronic device during cooling after attachment to an external device. The debonded portion allows the interconnect to flex and absorb stress.
    Type: Application
    Filed: December 18, 2013
    Publication date: April 17, 2014
    Inventors: Qing Ma, Jun He, Patrick Morrow, Paul B. Fischer, Sridhar Balakrishnan, Satish Radhakrishnan, Tatyana Tanya Andryushcheko, Guanghai Xu
  • Debond interconnect structures
    Patent number: 8637778
    Abstract: The present subject matter relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming an interconnect that has a portion thereof which becomes debonded from the microelectronic device during cooling after attachment to an external device. The debonded portion allows the interconnect to flex and absorb stress.
    Type: Grant
    Filed: April 8, 2010
    Date of Patent: January 28, 2014
    Assignee: Intel Corporation
    Inventors: Qing Ma, Jun He, Patrick Morrow, Paul B. Fischer, Sridhar Balakrishnan, Satish Radhakrishnan, Tatyana Tanya Andryushchenko, Guanghai Xu
  • DEBOND INTERCONNECT STRUCTURES
    Publication number: 20110247872
    Abstract: The present subject matter relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming an interconnect that has a portion thereof which becomes debonded from the microelectronic device during cooling after attachment to an external device. The debonded portion allows the interconnect to flex and absorb stress.
    Type: Application
    Filed: April 8, 2010
    Publication date: October 13, 2011
    Inventors: Qing Ma, Jun He, Patrick Morrow, Paul B. Fischer, Sridhar Balakrishnan, Satish Radhakrishnan, Tatyana Tanya Andryushchenko, Guanghai Xu
  • Transistor performance enhancement using engineered strains
    Patent number: 7679145
    Abstract: A semiconductor substrate having metal oxide semiconductor (MOS) devices, such as an integrated circuit die, is mechanically coupled to a stress structure to apply a stress that improves the performance of at least a portion of the MOS devices on the die.
    Type: Grant
    Filed: August 31, 2004
    Date of Patent: March 16, 2010
    Assignee: Intel Corporation
    Inventors: Jun He, Zhiyong Ma, Jose A. Maiz, Mark Bohr, Martin D. Giles, Guanghai Xu
  • Transistor performance enhancement using engineered strains
    Publication number: 20060043579
    Abstract: A semiconductor substrate having metal oxide semiconductor (MOS) devices, such as an integrated circuit die, is mechanically coupled to a stress structure to apply a stress that improves the performance of at least a portion of the MOS devices on the die.
    Type: Application
    Filed: August 31, 2004
    Publication date: March 2, 2006
    Inventors: Jun He, Zhiyong Ma, Jose Maiz, Mark Bohr, Martin Giles, Guanghai Xu