Abstract: The embodiments of the present disclosure provide a method for predicting gas transmission loss of smart gas, implemented by a smart gas equipment management platform of an Internet of Things (IoT) system for predicting gas transmission loss of smart gas, comprising: obtaining gas flow data, gas pressure data, and ambient temperature data of a plurality of time points respectively based on gas metering devices, pressure detection devices, and temperature monitoring devices at a plurality of positions of a gas pipeline network; predicting a gas metering error based on the ambient temperature data; determining whether gas loss is abnormal loss based on the gas flow data, the gas pressure data, and the gas metering error; and in response to a determination that the gas loss is the abnormal loss, sending a warning notice.

Abstract: The embodiments of the present disclosure provide a method and an Internet of Things (IoT) system for gas purification management in a storage and distribution station for smart gas. The method is implemented based on the IoT system for gas purification management in the storage and distribution station for smart gas. The IoT system includes a smart gas user platform, a smart gas service platform, a smart gas device management platform, a smart gas sensor network platform, and a smart gas object platform. The method is executed by the smart gas device management platform. The method includes: obtaining a gas quality condition parameter of a raw gas, and the gas quality condition parameter being obtained based on the storage and distribution station; determining, based on the gas quality condition parameter, an operation parameter in a purification process, the operation parameter being used for a purification operation of the raw gas.

Abstract: A membrane electrode with ultra-low oxygen mass transfer resistance includes an anode catalyst layer, a proton exchange membrane (PEM), and a cathode catalyst layer. A catalyst in the cathode catalyst layer is negatively charged, and the cathode catalyst layer is further doped with a negatively charged carbon carrier. A carbon carrier of the cathode catalyst layer in the membrane electrode is negatively charged, thereby optimizing the distribution of ionomers to achieve the purpose of reducing an oxygen mass transfer resistance in the cathode catalyst layer. In addition, an appropriate amount of the negatively charged carbon carrier is doped to increase a local oxygen concentration near active sites. In conclusion, the two methods of modifying with a negative charge and doping a negatively charged carbon carrier are used to optimize the local mass transfer resistance in an electrode and thus improve the cell performance.

Abstract: A fuel cell cathode catalyst layer structure for enhancing the durability of a catalyst is provided. The cathode catalyst layer structure includes a first catalyst portion, a second catalyst portion, and a third catalyst portion that are arranged in sequence from an area close to a diffusion layer to an area close to a proton exchange membrane (PEM); a pure platinum catalyst is placed inside the first catalyst portion, the second catalyst portion, and the third catalyst portion; platinum loads of the pure platinum catalysts inside the first catalyst portion, the second catalyst portion, and the third catalyst portion decrease progressively; and average particle sizes of pure platinum catalyst particles inside the first catalyst portion, the second catalyst portion, and the third catalyst portion increase progressively. The pure platinum catalyst with a large or small particle size is more resistant to corrosion, and improves the initial performance of fuel cell.

Abstract: Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.

Abstract: Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.

Abstract: Methods are provided for treating wafers using a wafer carrier rotated about an axis. The wafer carrier is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.

Abstract: Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.

Abstract: A wafer carrier used in wafer treatments such as chemical vapor deposition has pockets for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with thermal control features such as trenches which form thermal barriers having lower thermal conductivity than surrounding portions of the carrier. These thermal control features promote a more uniform temperature distribution across the wafer surfaces and across the carrier top surface.

Abstract: A wafer carrier for use in a chemical vapor deposition apparatus includes at least one region on its outer surface having a substantially different (e.g., lower) emissivity than other regions on the outer surface. The modified emissivity region may be located on the outer edge, the top surface, and/or the bottom surface of the carrier. The region may be associated with one or more wafer pockets of the wafer carrier. The modified emissivity region may be shaped and sized so as to modify the heat transmission through the region, and thereby increase the temperature uniformity across portions of the top surface of the wafer carrier or across individual wafers. The modified emissivity region may be provided by a coating on the outer surface of the wafer carrier.

Abstract: Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.