Patents by Inventor Guangji LI
Guangji LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11962047Abstract: The present disclosure generally relates to monitoring and controlling emissions produced by a fuel cell or fuel cell stack in a fuel cell engine of a vehicle and/or powertrain.Type: GrantFiled: March 29, 2022Date of Patent: April 16, 2024Assignee: CUMMINS INC.Inventors: Mingjian Li, Guangji Ji
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Patent number: 11910599Abstract: Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.Type: GrantFiled: November 23, 2022Date of Patent: February 20, 2024Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Zhongwang Sun, Guangji Li, Kun Zhang, Ming Hu, Jiwei Cheng, Shijin Luo, Kun Bao, Zhiliang Xia
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Publication number: 20230284445Abstract: The present disclosure describes method and structure of a three-dimensional memory device. The memory device includes a substrate and a plurality of wordlines extending along a first direction over the substrate. The first direction is along the x direction. The plurality of wordlines form a staircase structure in a first region. A plurality of channels are formed in a second region and through the plurality of wordlines. The second region abuts the first region at a region boundary. The memory device also includes an insulating slit formed in the first and second regions and along the first direction. A first width of the insulating slit in the first region measured in a second direction is greater than a second width of the insulating slit in the second region measured in the second direction.Type: ApplicationFiled: May 11, 2023Publication date: September 7, 2023Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Qiang XU, Zhiliang XIA, Ping YAN, Guangji LI, Zongliang HUO
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Patent number: 11729971Abstract: The present disclosure describes method and structure of a three-dimensional memory device. The memory device includes a substrate and a plurality of wordlines extending along a first direction over the substrate. The first direction is along the x direction. The plurality of wordlines form a staircase structure in a first region. A plurality of channels are formed in a second region and through the plurality of wordlines. The second region abuts the first region at a region boundary. The memory device also includes an insulating slit formed in the first and second regions and along the first direction. A first width of the insulating slit in the first region measured in a second direction is greater than a second width of the insulating slit in the second region measured in the second direction.Type: GrantFiled: December 20, 2021Date of Patent: August 15, 2023Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Qiang Xu, Zhiliang Xia, Ping Yan, Guangji Li, Zongliang Huo
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Publication number: 20230232615Abstract: The present disclosure discloses a method of manufacturing a semiconductor structure and a semiconductor structure, and relates to the technical field of semiconductors. The method includes: providing a base, active regions arranged at intervals along a first direction being arranged in the base; forming, on the base, bit line structures arranged at intervals; forming a contact structure between two adjacent ones of the bit line structures; forming a barrier structure on the contact structure, the barrier structures being arranged in correspondence with and connected to the bit line structure, and a first recess being formed between any adjacent barrier structures; and forming a conductive structure in the first recess, the conductive structure including a protective layer and a conductive portion, and the protective layer wrapping a sidewall and a bottom wall of the conductive portion.Type: ApplicationFiled: June 1, 2022Publication date: July 20, 2023Inventor: Guangji LI
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Publication number: 20230086425Abstract: Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.Type: ApplicationFiled: November 23, 2022Publication date: March 23, 2023Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Zhongwang SUN, Guangji LI, Kun ZHANG, Ming HU, Jiwei CHENG, Shijin LUO, Kun BAO, Zhiliang XIA
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Patent number: 11552091Abstract: Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.Type: GrantFiled: May 6, 2021Date of Patent: January 10, 2023Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Zhongwang Sun, Guangji Li, Kun Zhang, Ming Hu, Jiwei Cheng, Shijin Luo, Kun Bao, Zhiliang Xia
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Publication number: 20220115395Abstract: The present disclosure describes method and structure of a three-dimensional memory device. The memory device includes a substrate and a plurality of wordlines extending along a first direction over the substrate. The first direction is along the x direction. The plurality of wordlines form a staircase structure in a first region. A plurality of channels are formed in a second region and through the plurality of wordlines. The second region abuts the first region at a region boundary. The memory device also includes an insulating slit formed in the first and second regions and along the first direction. A first width of the insulating slit in the first region measured in a second direction is greater than a second width of the insulating slit in the second region measured in the second direction.Type: ApplicationFiled: December 20, 2021Publication date: April 14, 2022Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: QIANG XU, Zhiliang Xia, Ping Yan, Guangji Li, Zongliang Huo
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Patent number: 11205656Abstract: The present disclosure describes method and structure of a three-dimensional memory device. The memory device includes a substrate and a plurality of wordlines extending along a first direction over the substrate. The first direction is along the x direction. The plurality of wordlines form a staircase structure in a first region. A plurality of channels are formed in a second region and through the plurality of wordlines. The second region abuts the first region at a region boundary. The memory device also includes an insulating slit formed in the first and second regions and along the first direction. A first width of the insulating slit in the first region measured in a second direction is greater than a second width of the insulating slit in the second region measured in the second direction.Type: GrantFiled: July 1, 2020Date of Patent: December 21, 2021Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Qiang Xu, Zhiliang Xia, Ping Yan, Guangji Li, Zongliang Huo
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Publication number: 20210265375Abstract: Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.Type: ApplicationFiled: May 6, 2021Publication date: August 26, 2021Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Zhongwang SUN, Guangji LI, Kun ZHANG, Ming HU, Jiwei CHENG, Shijin LUO, Kun BAO, Zhiliang XIA
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Publication number: 20200335514Abstract: The present disclosure describes method and structure of a three-dimensional memory device. The memory device includes a substrate and a plurality of wordlines extending along a first direction over the substrate. The first direction is along the x direction. The plurality of wordlines form a staircase structure in a first region. A plurality of channels are formed in a second region and through the plurality of wordlines. The second region abuts the first region at a region boundary. The memory device also includes an insulating slit formed in the first and second regions and along the first direction. A first width of the insulating slit in the first region measured in a second direction is greater than a second width of the insulating slit in the second region measured in the second direction.Type: ApplicationFiled: July 1, 2020Publication date: October 22, 2020Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Qiang XU, Zhiliang XIA, Ping YAN, Guangji LI, Zongliang HUO
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Patent number: 10727245Abstract: The present disclosure describes method and structure of a three-dimensional memory device. The memory device includes a substrate and a plurality of wordlines extending along a first direction over the substrate. The first direction is along the x direction. The plurality of wordlines form a staircase structure in a first region. A plurality of channels are formed in a second region and through the plurality of wordlines. The second region abuts the first region at a region boundary. The memory device also includes an insulating slit formed in the first and second regions and along the first direction. A first width of the insulating slit in the first region measured in a second direction is greater than a second width of the insulating slit in the second region measured in the second direction.Type: GrantFiled: July 26, 2018Date of Patent: July 28, 2020Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Qiang Xu, Zhiliang Xia, Ping Yan, Guangji Li, Zongliang Huo
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Publication number: 20200194447Abstract: Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.Type: ApplicationFiled: January 4, 2019Publication date: June 18, 2020Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Zhongwang SUN, Guangji LI, Kun ZHANG, Ming HU, Jiwei CHENG, Shijin LUO, Kun BAO, Zhiliang XIA
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Publication number: 20190081059Abstract: The present disclosure describes method and structure of a three-dimensional memory device. The memory device includes a substrate and a plurality of wordlines extending along a first direction over the substrate. The first direction is along the x direction. The plurality of wordlines form a staircase structure in a first region. A plurality of channels are formed in a second region and through the plurality of wordlines. The second region abuts the first region at a region boundary. The memory device also includes an insulating slit formed in the first and second regions and along the first direction. A first width of the insulating slit in the first region measured in a second direction is greater than a second width of the insulating slit in the second region measured in the second direction.Type: ApplicationFiled: July 26, 2018Publication date: March 14, 2019Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Qiang XU, Zhiliang XIA, Ping YAN, Guangji LI, Zongliang HUO