Patents by Inventor Guanglin Yang

Guanglin Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hybrid bonding structure and hybrid bonding method
    Patent number: 11756922
    Abstract: Embodiments of this application disclose a hybrid bonding structure and a hybrid bonding method. The hybrid bonding structure includes a first chip and a second chip. A surface of the first chip includes a first insulation dielectric and a first metal, and a first gap area exists between the first metal and the first insulation dielectric. A surface of the second chip includes a second insulation dielectric and a second metal. A surface of the first metal is higher than a surface of the first insulation dielectric. Metallic bonding is formed after the first metal is in contact with the second metal, and the first metal is longitudinally and transversely deformed in the first gap area. Insulation dielectric bonding is formed after the first insulation dielectric is in contact with the second insulation dielectric.
    Type: Grant
    Filed: November 15, 2021
    Date of Patent: September 12, 2023
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Ran He, Huifang Jiao, Yufeng Dai, Guanglin Yang, Chihon Ho, Ronghua Xie
  • HYBRID BONDING STRUCTURE AND HYBRID BONDING METHOD
    Publication number: 20220077105
    Abstract: Embodiments of this application disclose a hybrid bonding structure and a hybrid bonding method. The hybrid bonding structure includes a first chip and a second chip. A surface of the first chip includes a first insulation dielectric and a first metal, and a first gap area exists between the first metal and the first insulation dielectric. A surface of the second chip includes a second insulation dielectric and a second metal. A surface of the first metal is higher than a surface of the first insulation dielectric. Metallic bonding is formed after the first metal is in contact with the second metal, and the first metal is longitudinally and transversely deformed in the first gap area. Insulation dielectric bonding is formed after the first insulation dielectric is in contact with the second insulation dielectric.
    Type: Application
    Filed: November 15, 2021
    Publication date: March 10, 2022
    Applicant: HUAWEI TECHNOLOGIES CO.,LTD.
    Inventors: Ran He, Huifang Jiao, Yufeng Dai, Guanglin Yang, Chihon Ho, Ronghua Xie
  • VR device handle
    Patent number: D1031849
    Type: Grant
    Filed: December 6, 2023
    Date of Patent: June 18, 2024
    Inventors: Zhaolin Wu, Zehong Chen, Guanglin Yang, Qiwu Wang