Patents by Inventor Guanglong FAN

Guanglong FAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CONTACT STRUCTURE AND METHOD OF FORMING THE SAME
    Publication number: 20220285275
    Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device can include a trench formed in a first dielectric layer, a trench filler layer that fills a portion of the trench, a conductive layer over the trench filler layer, and a second dielectric layer over the conductive layer. The second dielectric layer is disposed in the trench. The semiconductor device can also include a contact structure configured to connect to the conductive layer through a hole in the second dielectric layer.
    Type: Application
    Filed: April 1, 2021
    Publication date: September 8, 2022
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Wei XU, Qingqing WANG, Jinxing CHEN, Guanglong FAN, Huichao LIU