Abstract: A light-emitting device and a manufacturing method thereof, a display substrate and a display apparatus are provided in the embodiments of the present disclosure. The light-emitting device includes: a first electrode disposed on a base substrate; a quantum dot light-emitting layer disposed at a side of the first electrode away from the base substrate; and an electron transport layer disposed at a side of the quantum dot light-emitting layer close to or away from the first electrode, the electron transport layer including a first transport sub-layer and a second transport sub-layer which are arranged in layer configuration, a material of the first transport sub-layer and a material of the second transport sub-layer both including n-type metal oxides, and an oxygen content of the first transport sub-layer being less than an oxygen content of the second transport sub-layer.

Abstract: A light emitting diode may include a light emission layer and a charge transport layer disposed on the light emission layer. One or more nanostructures may be formed by removing a portion of the charge transport layer and/or the light emission layer and depositing a plasmonic metamaterial on a remaining portion of the charge transport layer and/or the light emission layer. The one or more nanostructures may include the plasmonic metamaterial deposited inside the recesses formed by the remaining portion of the charge transport layer and/or the light emission layer, with an additional portion of the charge transport layer disposed on top. A material composition, shape, dimension, placement, and/or distribution of the one or more nanostructures may be configured to maximize the quantum efficiency of the light emitting diode, especially at a microscale of less than 100 microns.

Abstract: Broadly speaking, embodiments of the present invention provide a solid state light-emitting device and a method of manufacturing the solid state light-emitting device. The method comprises preparing a thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles. In embodiments, the method comprises blending a solution of a semiconducting perovskite material or a precursor therefor with a solution of a material that has a wider band gap than the semiconducting perovskite material or a precursor therefor followed by removal of the solvent from the mixture thus formed, to give the semiconducting perovskite nanoparticles embedded in a matrix or blend of the material that has a wider band gap than the semiconducting perovskite nanoparticles.

Abstract: We describe a luminescent device (120, 130) comprising a substrate (102) and a film comprising perovskite crystals (122, 132) deposited on the substrate, wherein the film comprising perovskite crystals is encapsulated with a layer (124, 134)) or within a matrix (124, 134) of an insulating oxide or an insulating nitride.

Abstract: Broadly speaking, embodiments of the present invention provide a solid state light-emitting device and a method of manufacturing the solid state light-emitting device. The method comprises preparing a thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles. In embodiments, the method comprises blending a solution of a semiconducting perovskite material or a precursor therefor with a solution of a material that has a wider band gap than the semiconducting perovskite material or a precursor therefor followed by removal of the solvent from the mixture thus formed, to give the semiconducting perovskite nanoparticles embedded in a matrix or blend of the material that has a wider band gap than the semiconducting perovskite nanoparticles.

Abstract: Broadly speaking, embodiments of the present invention provide a solid state light-emitting device and a method of manufacturing the solid state light-emitting device. The method comprises preparing a thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles. In embodiments, the method comprises blending a solution of a semiconducting perovskite material or a precursor therefor with a solution of a material that has a wider band gap than the semiconducting perovskite material or a precursor therefor followed by removal of the solvent from the mixture thus formed, to give the semiconducting perovskite nanoparticles embedded in a matrix or blend of the material that has a wider band gap than the semiconducting perovskite nanoparticles.

Abstract: We describe a luminescent device (120, 130) comprising a substrate (102) and a film comprising perovskite crystals (122, 132) deposited on the substrate, wherein the film comprising perovskite crystals is encapsulated with a layer (124, 134)) or within a matrix (124, 134) of an insulating oxide or an insulating nitride.