Abstract: The present invention provides a photosensitive element, and a preparation method and a display device thereof. The photosensitive element includes a substrate; a first electrode arranged on the substrate; an N-type doped silicon layer arranged on the first electrode; an undoped silicon layer arranged on the N-type doped silicon layer; a molybdenum oxide layer arranged on the undoped silicon layer; an insulating layer arranged on the molybdenum oxide layer and the substrate, wherein a first opening is arranged on the insulating layer to expose the molybdenum oxide layer; and a second electrode arranged on the insulating layer and the molybdenum oxide layer, wherein the second electrode contacts the molybdenum oxide layer through the first opening.

Abstract: A sensor, a manufacturing method thereof, and a photoelectric conversion device are provided. The sensor includes a first gate disposed on a second insulating layer, wherein a position of the first gate corresponds to a position of a first active layer and a material of the first gate is a metal material; a second gate disposed on the second insulating layer or between a second active layer and a base substrate, wherein a position of the second active layer corresponds to a position of the second gate.

Abstract: The embodiments of the present disclosure provide a photoelectric sensor and a method of manufacturing the same, and a display panel. The photoelectric sensor includes a transparent substrate, a hole transport layer, a light absorption layer, and an electron transport layer. Disposing the hole transport layer on one side close to the transparent substrate and shielding the hole transport layer by use of the light absorption layer and the electron transport layer avoid the dissolution of molybdenum oxide in the hole transport layer during a cleaning process and reduce the difficulty in manufacturing process of the photoelectric sensor.

Abstract: A coating configured to reduce reflectivity, a display panel and a display device are disclosed. The coating configured to reduce reflectivity includes at least one set of laminated structure, wherein the laminated structure includes a first coating and a second coating, wherein a refractive index of the first coating is greater than a refractive index of the second coating; and when the laminated structure comprises two or more sets of the laminated structure, the two or more sets of the laminated structure are arranged in a stack.

Abstract: A sensor, a manufacturing method thereof, and a photoelectric conversion device are provided. The sensor includes a first gate disposed on a second insulating layer, wherein a position of the first gate corresponds to a position of a first active layer and a material of the first gate is a metal material; a second gate disposed on the second insulating layer or between a second active layer and a base substrate, wherein a position of the second active layer corresponds to a position of the second gate.

Abstract: A semiconductor device, a manufacturing method thereof, and a display panel are provided. The semiconductor device includes a first active component. The first active component includes a first semiconductor layer and a contact layer. The contact layer includes a first doped layer, a second semiconductor layer, and a second doped layer stacked from bottom to top, so that there are at least two PN junction interfaces inside to increase a light to dark current ratio of the semiconductor device.

Abstract: The present application provides a light sensor and a display device. A light sensing transistor and a switching transistor in the light sensor are configured to form a light sensor circuit. In a structural design, amorphous silicon is configured as a first active pattern of the light sensing transistor, so that a thickness of a channel region of the first active pattern is greater than or equal to 5000 angstroms. Therefore, a number of photo-generated carriers of the light sensing transistor is increased, which makes the light sensor have higher responses and increases fingerprint or palmprint recognition success rates.

Abstract: The present invention provides a photosensitive element, and a preparation method and a display device thereof. The photosensitive element includes a substrate; a first electrode arranged on the substrate; an N-type doped silicon layer arranged on the first electrode; an undoped silicon layer arranged on the N-type doped silicon layer; a molybdenum oxide layer arranged on the undoped silicon layer; an insulating layer arranged on the molybdenum oxide layer and the substrate, wherein a first opening is arranged on the insulating layer to expose the molybdenum oxide layer; and a second electrode arranged on the insulating layer and the molybdenum oxide layer, wherein the second electrode contacts the molybdenum oxide layer through the first opening.