Patents by Inventor Guangtao YANG

Guangtao YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230420593
    Abstract: The present disclosure provides a solar cell including a substrate, a first emitter, a second emitter, an insulating spacing structure, a first electrode, and a second electrode. The substrate includes a front surface and a back surface opposite to each other. The first emitter and the second emitter are disposed on the back surface of the substrate. The first electrode is disposed on a side of the first emitter away from the substrate, and the first electrode is electrically connected to the first emitter. The second electrode is disposed on a side of the second emitter away from the substrate, and the second electrode is electrically connected to the second emitter. The insulating spacing structure is disposed between the first emitter and the second emitter, and the first emitter and the second emitter are spaced from each other by the insulating spacing structure.
    Type: Application
    Filed: September 8, 2023
    Publication date: December 28, 2023
    Applicant: TRINA SOLAR CO., LTD.
    Inventors: Zhuohan ZHANG, Daming CHEN, Yunyun HU, Wei LIU, Wenxian JI, Rui YANG, Guanchao XU, Xueling ZHANG, Guangtao YANG, Yifeng CHEN
  • Publication number: 20230327029
    Abstract: A solar cell and preparation method thereof. The solar cell includes a silicon substrate having first or second polarity, where the substrate includes first and second sides opposite to each other; a first passivation structure on first side of the substrate, where a portion of first structure farthest from the substrate has first polarity and a position where first structure is located is first electrode region; a second passivation structure on a side of first structure away from the substrate and in at least second electrode region, where a portion of second structure farthest from the substrate has second polarity and second structure has a process temperature lower than first structure; and a first electrode in first electrode region on a side of second structure away from the substrate, and a second electrode in second electrode region on a side of second structure away from the substrate.
    Type: Application
    Filed: June 12, 2023
    Publication date: October 12, 2023
    Inventors: Hongwei LI, Guangtao YANG, Xueling ZHANG, Daming CHEN, Yifeng CHEN
  • Publication number: 20230327030
    Abstract: A solar cell and preparation method. The solar cell includes silicon substrate having first or second polarity, where the substrate includes first and second sides opposite to each other; first passivation structure on first side of the substrate, a portion of first structure farthest from the substrate having first polarity and a position where first structure is located being first electrode region; second passivation structure on a side of first structure away from the substrate, a portion of second structure farthest from the substrate having second polarity and a position where second structure is located being second electrode region, second and first electrode regions are not overlapped and second structure has a process temperature lower than first structure; and first electrode in first region on a side of second structure away from the substrate and second electrode in second region on a side of second structure away from the substrate.
    Type: Application
    Filed: June 12, 2023
    Publication date: October 12, 2023
    Inventors: Hongwei LI, Zibo MENG, Tingting HUO, Guangtao YANG, Xueling ZHANG, Daming CHEN
  • Patent number: 9764362
    Abstract: The present invention comprises: a separation silo, a discharge silo, a upper sidewall of the separation silo communicated with the discharge silo through a communication port, wherein an air curtain is disposed in the communication port to isolate the silos from each other, a discharge port is disposed at the bottom of the discharge silo, a suction outlet is mounted on the top of the separation silo, a feeding port is disposed at the lower part of a sidewall of the separation silo, which is precisely facing towards the underside of the end of the belt conveyer, a vibration trough is arranged at the lower part of the separation silo, a damper plate is disposed underside thereof, an air inlet is located underbelly thereof at the bottom of the separation silo, a rejection outlet is installed at the underside end of the vibrating trough.
    Type: Grant
    Filed: April 29, 2014
    Date of Patent: September 19, 2017
    Assignees: HONGTA TOBACCO (GROUP) CO., LTD., YUXI JIXINGDEYI TRADE & INDUSTRY CO., LTD.
    Inventors: Dingrong Mou, Yi Wang, Quan Zou, Yunchuan Zhao, Ran Chen, Guangtao Yang, Xiaohua Gao, Yuan Cai, Wenhui Qi, Xiaohui Qiao, Wenpin Xiao, Yuanchun Dou, Hao Fan, Binghai Qian
  • Publication number: 20160375467
    Abstract: The present invention comprises: a separation silo, a discharge silo, a upper sidewall of the separation silo communicated with the discharge silo through a communication port, wherein an air curtain is disposed in the communication port to isolate the silos from each other, a discharge port is disposed at the bottom of the discharge silo, a suction outlet is mounted on the top of the separation silo, a feeding port is disposed at the lower part of a sidewall of the separation silo, which is precisely facing towards the underside of the end of the belt conveyer, a vibration trough is arranged at the lower part of the separation silo, a damper plate is disposed underside thereof, an air inlet is located underbelly thereof at the bottom of the separation silo, a rejection outlet is installed at the underside end of the vibrating trough.
    Type: Application
    Filed: April 29, 2014
    Publication date: December 29, 2016
    Applicants: HONGTA TOBACCO (GROUP) CO., LTD., YUXI JIXINGDEYI TRADE & INDUSTRY CO., LTD.
    Inventors: Dingrong MOU, Yi WANG, Quan ZOU, Yunchuan ZHAO, Ran CHEN, Guangtao YANG, Xiaohua GAO, Yuan CAI, Wenhui QI, Xiaohui QIAO, Wenpin XIAO, Yuanchun DOU, Hao FAN, Binghai QIAN