Patents by Inventor Guangxing Liang

Guangxing Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200400490
    Abstract: Embodiments of the present disclosure provide a thermoelectric laser power probe, including a heat dissipation housing and a laser power probing unit fixed inside the heat dissipation housing. The heat dissipation housing is provided with a light inlet. The laser power probing unit includes a substrate. The substrate includes a top surface and at least two outer side surfaces. The top surface is provided with an absorbent material layer. The absorbent material layer corresponds to the light inlet. The at least two outer side surfaces are symmetrically arranged about a center line of a cross section of the top surface, each of the outer side surfaces is perpendicular to the top surface or a tangent plane of the top surface, and each of the outer side surfaces is sequentially provided with an insulating layer and a thin-film thermopile.
    Type: Application
    Filed: September 4, 2020
    Publication date: December 24, 2020
    Inventors: Ping Fan, Tianbao Chen, Zhaokun Cai, Chaoming Chen, Zhuanghao Zheng, Guangxing Liang
  • Patent number: 9634221
    Abstract: A method of manufacturing a thin-film thermo-electric generator includes the steps of: forming two or more PN junctions each having a three-layer structure; forming a substrate which has a first side and an opposed second side; coupling the PN junctions at the first side of the substrate to define a first group of PN junctions at the first side of the substrate; and providing two electrodes that one of the electrodes is extracted from the first group of PN junctions. Accordingly, each of the PN junctions is formed by depositing an insulating thin-film layer between a P-type thermo-electric thin-film layer and a N-type thermo-electric thin-film layer.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: April 25, 2017
    Assignee: SHENZHEN UNIVERSITY
    Inventors: Ping Fan, Dongping Zhang, Zhuanghao Zheng, Guangxing Liang
  • Publication number: 20160104830
    Abstract: A method of manufacturing a thin-film thermo-electric generator includes the steps of: forming two or more PN junctions each having a three-layer structure; forming a substrate which has a first side and an opposed second side; coupling the PN junctions at the first side of the substrate to define a first group of PN junctions at the first side of the substrate; and providing two electrodes that one of the electrodes is extracted from the first group of PN junctions. Accordingly, each of the PN junctions is formed by depositing an insulating thin-film layer between a P-type thermo-electric thin-film layer and a N-type thermo-electric thin-film layer.
    Type: Application
    Filed: December 18, 2015
    Publication date: April 14, 2016
    Inventors: Ping FAN, Dongping ZHANG, Zhuanghao ZHENG, Guangxing LIANG
  • Patent number: 9299907
    Abstract: For the thin-film thermo-electric generator and fabrication method of this invention, a P-type thermo-electric thin-film layer, an insulating thin-film layer and a N-type thermo-electric thin-film layer is deposited on a substrate to form a three-layer PN junction, multiple three-layer PN junctions in series are available, an insulating thin-film layer is provided between every to serial three-layer PN junctions, and electrodes are extracted from the substrate and the outermost thin-film layer of the last three-layer thin-film PN junctions.
    Type: Grant
    Filed: December 9, 2009
    Date of Patent: March 29, 2016
    Assignee: ShenZhen University
    Inventors: Ping Fan, Dongping Zhang, Zhuangghao Zjemg, Guangxing Liang
  • Publication number: 20110197942
    Abstract: For the thin-film thermo-electric generator and fabrication method of this invention, a P-type thermo-electric thin-film layer, an insulating thin-film layer and a N-type thermo-electric thin-film layer is deposited on a substrate to form a three-layer PN junction, multiple three-layer PN junctions in series are available, an insulating thin-film layer is provided between every to serial three-layer PN junctions, and electrodes are extracted from the substrate and the outermost thin-film layer of the last three-layer thin-film PN junctions.
    Type: Application
    Filed: December 9, 2009
    Publication date: August 18, 2011
    Applicant: SHENZHEN UNIVERSITY
    Inventors: Ping Fan, Dongping Zhang, Zhuangghao Zjemg, Guangxing Liang