Abstract: The application proposes a non-destructive testing method for the sealing degree of the small cigarette box packaging, which includes placing the small cigarette box to be tested in an airtight chamber, using a balance cabin to quickly form a stable negative pressure in the airtight chamber; The pressure change of the sealed chamber is continuously measured until equilibrium, and the data model is analyzed and established by using Darcy's law, Fick's diffusion law and the physical process of molecular kinetic theory. Through the non-destructive testing method for the sealing degree of the small cigarette box packaging of the present invention, the traditional destructive measurement (damaged small box packaging) for measuring the sealing degree of cigarette small box is changed into non-destructive testing; The test results have specific physical meaning; The test time of a single sample is reduced to ? of the time of destructive test.

Abstract: In one aspect, a bidirectional Electro-Static Discharge (ESD) protection device includes: a first well region, a second well region and a third well region formed in a semiconductor substrate; two or more first injection regions and two or more second injection regions formed in the first well region, and two or more fourth injection regions and two or more fifth injection regions formed in the second well region; and third injection regions formed at a junction of the first well region and the third well region and at a junction of the second well region and the third well region.

Abstract: A semiconductor device includes a semiconductor substrate, a field oxide layer, a gate region and field plate integrated structure and a plurality of contact holes. A body region and a drift region are formed in the semiconductor substrate. An active region is formed in the body region, and a drain region is formed in the drift region. A field oxide layer is located on the drift region and the drift region surrounds a part of the field oxide layer. An integrated structure including a gate region and a field plate, the integrated structure extending from above the field oxide layer to above the body region. A depth of a contact hole closer to the source region penetrating into the field oxide layer is greater than a depth of a contact hole closer to the drain region penetrating into the field oxide layer.

Abstract: A semiconductor device for enhancing electrostatic discharge (ESD) protection and a layout structure thereof are provided. An ESD protection device and a protected device (300) with a small feature linewidth are located on the same well region. The device (300) with the small feature linewidth is located at a middle portion. The ESD protection device is disposed at both sides of the device (300) with the small feature linewidth.

Abstract: Provided by the present disclosure is a bidirectional electrostatic discharge protection device which includes a first doped region, a second doped region, a third doped region, a first diode and a second diode. The first doped region has a first conductivity type, and the second doped region and the third doped region both have a second conductivity type. The first doped region has a ring structure outside the second doped region and the third doped region. A cathode of the first diode is coupled to the first doped region, and an anode of the first diode is coupled to a first port together with the second doped region. A cathode of the second diode is coupled to the first doped region, and an anode of the second diode is coupled to a second port together with the third doped region.

Abstract: A semiconductor device includes a semiconductor substrate, a field oxide layer, a gate plate and field plate integration structure and a plurality of contact holes. A body region and a drift region are formed in the semiconductor substrate. An active region is formed in the body region, and a drain region is formed in the drift region. The field oxide layer is located on the drift region and the drift region surrounds at least part of the field oxide layer. The gate plate and field plate integration structure is provided across the semiconductor substrate and the field oxide layer, and extends onto the body region. The contact hole penetrates into the field oxide layer. The depth of the contact hole near the source region penetrating into the field oxide layer is greater than the depth of the contact hole near the drain region penetrating into the field oxide layer.

Abstract: A high voltage device with self-electrostatic discharge protection. The device comprises: a semiconductor substrate; a first N-well (201), a P-well (202), and a second N-well (209) formed in the semiconductor substrate; a first N+ ion implantation region (203) and a first isolation region (207) formed in the first N-well (201); a second N+ ion implantation region (204) and a P+ ion implantation region (205) adjacent to the second N+ ion implantation region (204) that are formed in the P-well (202); a third N+ ion implantation region (208) formed in the second N-well (209); and a second isolation region (210) formed in the semiconductor substrate, the second isolation region (210) covering a portion of the second N-well (209) and a portion of the P-well (202), wherein the second N+ ion implantation region (203), the P+ ion implantation region (205), and the third N+ ion implantation region (208) constitute an NPN-type BJT, and the electrostatic discharge protection is achieved by means of the BJT.

Abstract: An electrostatic protection device of an LDMOS silicon controlled structure comprises a P-type substrate (310), an N-well (320) and a P-well (330) on the substrate, a gate electrode (340) overlapping on the P-well (330) and extending to an edge of the N-well (320), a first N+ structure and a first P+ structure provided in the N-well (320), and a second N+ structure and a second P+ structure provided in the P-well (330), the first N+ structure being a drain electrode N+ structure (322), the first N+ structure being a drain electrode N+ structure (322), the first P+ structure being a drain electrode P+ structure (324), the second N+ structure being a source electrode N+ structure (332), the second P+ structure being a source P+ structure (334), and a distance from the drain electrode P+ structure (324) to the gate electrode (340) being greater than a distance from the drain electrode N+ structure (322) to the gate electrode (340).

Abstract: A semiconductor device for enhancing electrostatic discharge (ESD) protection and a layout structure thereof are provided. An ESD protection device and a protected device (300) with a small feature linewidth are located on the same well region. The device (300) with the small feature linewidth is located at a middle portion. The ESD protection device is disposed at both sides of the device (300) with the small feature linewidth.

Abstract: An electrostatic protection device of an LDMOS silicon controlled structure comprises a P-type substrate (310), an N-well (320) and a P-well (330) on the substrate, a gate electrode (340) overlapping on the P-well (330) and extending to an edge of the N-well (320), a first N+ structure and a first P+ structure provided in the N-well (320), and a second N+ structure and a second P+ structure provided in the P-well(330), the first N+ structure being a drain electrode N+ structure (322), the first N+ structure being a drain electrode N+ structure (322), the first P+ structure being a drain electrode P+ structure (324), the second N+ structure being a source electrode N+ structure (332), the second P+ structure being a source P+ structure (334), and a distance from the drain electrode P+ structure (324) to the gate electrode (340) being greater than a distance from the drain electrode N+ structure (322) to the gate electrode (340).

Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.

Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.

Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.

Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.

Abstract: Compositions comprising bis-tetrahydrofuran benzodioxyolyl sulfonamide compounds that are surprisingly effective protease inhibitors and a second antiretroviral compound are disclosed. Methods of inhibiting retrovirus proteases, in particular multi-drug resistant retrovirus proteases, methods of treating or preventing infection or disease associated with retrovirus infection in a mammal, and methods of inhibiting viral replication are also disclosed.

Abstract: Compositions comprising bis-tetrahydrofuran benzodioxyolyl sulfonamide compounds that are surprisingly effective protease inhibitors and a second antiretroviral compound are disclosed. Methods of inhibiting retrovirus proteases, in particular multi-drug resistant retrovirus proteases, methods of treating or preventing infection or disease associated with retrovirus infection in a mammal, and methods of inhibiting viral replication are also disclosed.

Abstract: Inorganic-organic hybrid mixture sol-gel encapsulated lipid vesicles which are composed of silyl lipids or a mixture of silyl lipids and phospholipids are provided. The present invention also provides encapsulated Langmuir Blogget (LB) membranes and biological macromolecules. The sol-gel encapsulated lipid vesicles, LB membranes and proteins possess a higher stability than conventional vesicles. Inorganic-organic hybrid mixture sol-gels are provided as novel sol-gel materials possessing desirable mechanical and physicochemical properties. Also provided are methods of preparing encapsulated lipid vesicles, LB membranes and proteins. Methods of performing renal dialysis using compositions of the invention are also provided.

Abstract: Novel bis-tetrahydrofuran benzodioxolyl sulfonamide compounds which are surprisingly effective protease inhibitors. The invention also relates to pharmaceutical compositions, methods of inhibiting retrovirus proteases, in particular multidrug resistant retrovirus proteases, methods of treating or combating infection or disease associated with retrovirus infection in a mammal, and methods of inhibiting viral replication.

Abstract: Inorganic-organic hybrid mixture sol-gel encapsulated lipid vesicles which are composed of silyl lipids or a mixture of silyl lipids and phospholipids are provided. The present invention also provides encapsulated Langmuir Blogget (LB) membranes and biological macromolecules. The sol-gel encapsulated lipid vesicles, LB membranes and proteins possess a higher stability than conventional vesicles. Inorganic-organic hybrid mixture sol-gels are provided as novel sol-gel materials possessing desirable mechanical and physicochemical properties. Also provided are methods of preparing encapsulated lipid vesicles, LB membranes and proteins. Methods of performing renal dialysis using compositions of the invention are also provided.

Abstract: Inorganic-organic hybrid mixture sol-gel encapsulated lipid vesicles which are composed of silyl lipids or a mixture of silyl lipids and phospholipids are provided. The present invention also provides encapsulated Langmuir Blogget (LB) membranes and biological macromolecules. The sol-gel encapsulated lipid vesicles, LB membranes and proteins possess a higher stability than conventional vesicles. Inorganic-organic hybrid mixture sol-gels are provided as novel sol-gel materials possessing desirable mechanical and physicochemical properties. Also provided are methods of preparing encapsulated lipid vesicles, LB membranes and proteins. Methods of performing renal dialysis using compositions of the invention are also provided.