Abstract: A light-emitting diode includes a semiconductor light-emitting sequence layer and a DBR structure. The DBR structure is disposed on a first surface of the semiconductor light-emitting sequence layer. The DBR structure includes m first sublayers and n second sublayers stacked in an alternating manner, wherein m and n are positive integers larger than 1. Materials of the first sublayers and the second sublayers are different. One first sublayer and one second sublayer adjacent to each other are defined as a group of a stacked-layer structure. In each of at least 40% of the groups of the stacked-layer structures, an optical thickness of one sublayer is greater than ? of a central wavelength of light emitted by the semiconductor light-emitting sequence layer and an optical thickness of the other sublayer is less than ? of the central wavelength of the light emitted by the semiconductor light-emitting sequence layer.

Abstract: An automatic concrete dam defect image description generation method based on graph attention network, including: 1) extract the local grid features and whole image features of the defect image and conduct image coding by using multi-layer convolutional neural network; 2) construct the grid feature interaction graph, and fuse and encode the grid visual features and global image features of the defect image; 3) update and optimize the global and local features through the graph attention network, and fully utilize the improved visual features for defect description. The invention constructs the grid feature interaction graph, updates the node information by using the graph attention network, and realizes the feature extraction task as the graph node classification task. The invention can capture the global image information of the defect image and the potential interaction of local grid features, and the generated description text can accurately and coherently describe the defect information.

Abstract: A flip-chip LED device includes an epitaxial structure, a first contact electrode, and a second contact electrode. The second contact electrode is disposed on the epitaxial structure and extending toward the first contact electrode. The second contact electrode includes a first curved extension, a second curved extension, a connecting portion, a first straight extension, and a second straight extension. The connecting portion is connected to the first curved extension and to the second curved extension. The first straight extension is connected to the first curved extension. The second straight extension is connected to the second curved extension.