Abstract: A platinum complex having a structure of Formula (I) particularly of Formula (A) such as Formula (III) or Formula (IIIa). A pharmaceutical composition includes the platinum complex of the present invention and a pharmaceutically acceptable carrier. A method of treating a target tissue includes administering to a patient in need thereof a platinum complex of the present invention and administering to the target tissue radiation in an amount and of a frequency effective to activate the compound. The platinum complex of the present invention can be used in preparation of a medicament for treating the target tissue by sonodynamic therapy, photodynamic therapy, chemotherapy and/or a combination thereof.

Abstract: Provided is a refined Goss-grain aluminum alloy plate and a preparation method thereof. The refined Goss-grain aluminum alloy plate includes the following compositions: 3.7-4.8 wt % of Cu, 1.2-1.7 wt % of Mg, 0.3-0.8 wt % of Mn, 0.03-0.10 wt % of Ti, and the balance of Al. The refined Goss-grain aluminum alloy plate is prepared by a method including subjecting an Al—Cu—Mg alloy ingot with a certain composition to a homogenizing at a temperature of 470-505° C., a hot rolling at high temperature of 465-495° C. with a large deformation of 80%-98% and a high final temperature, then directly to a cold rolling with a small or medium deformation of 5% to 50%, and then to a recrystallization and annealing treatment at a temperature of 300-450° C., a solid solution treatment at a temperature of 460-505° C., and a natural aging treatment for at least 96 hours.

Abstract: A method for screening pesticide residues in medicine food homology (MFH) characteristic agricultural products includes step 1, a liquid chromatography-mass spectrometry database of pesticides is constructed, standard solution are prepared for the pesticides and liquid chromatography and mass spectrometry are used to detect the standard solutions; step 2, a sample is processed and then is detected to obtain a liquid chromatography-mass spectrogram; step 3, the liquid chromatography-mass spectrogram obtained from step 2 and liquid chromatography-mass spectrograms in the liquid chromatography-mass spectrometry database obtained from step 1 are compared and analyzed individually.

Abstract: A system includes a processor, a charger circuit and a battery management unit (BMU). The charger circuit charges a battery. The BMU includes an intelligent boot module that can send a boot signal to the processor based on information including a battery condition and system information. The processor starts a boot sequence based on the boot signal.

Abstract: A method used in forming a memory array, comprises forming a substrate comprising a conductive tier, an insulator etch-stop tier above the conductive tier, a select gate tier above the insulator etch-stop tier, and a stack comprising vertically-alternating insulative tiers and wordline tiers above the select gate tier. Etching is conducted through the insulative tiers, the wordline tiers, and the select gate tier to and stopping on the insulator etch-stop tier to form channel openings that have individual bottoms comprising the insulator etch-stop tier. The insulator etch-stop tier is penetrated through to extend individual of the channel openings there-through to the conductive tier. Channel material is formed in the individual channel openings elevationally along the insulative tiers, the wordline tiers, and the select gate tier and is directly electrically coupled with the conductive material in the conductive tier. Structure independent of method is disclosed.

Abstract: The disclosed technology relates to a portable electronic device. The portable electronic device may comprise a battery, a battery controller, and a system controller. The battery controller may be configured to determine real time battery state information associated with the battery, the real time battery state information including a system load current draw, a battery age indicator, and a battery temperature. The system controller may be configured to determine a user initiated current low voltage mode state of the portable electronic device of a plurality of low voltage mode states, receive current battery state information from the battery controller, and adaptively generate a real time shutoff voltage threshold based on the current determined low voltage mode state and the current battery state information.

Abstract: The present disclosure relates to a device and a method for pipeline leakage detection. The device for pipeline leakage detection includes a metal powder storage box, a plurality of ribs, and a signal collection and processing device. The metal powder storage box is ring-shaped and made of insulating material, which is configured to be sleeved on a pipeline. Metal powder is stored inside of the metal powder storage box, and inner and outer peripheral walls of the metal powder storage box are of mesh structure, which allows the metal powder to be ejected from the metal powder storage box under the push of leakage fluid of the pipeline. The plurality of ribs are made of insulating material, which are distributed evenly along an outer peripheral wall of the metal powder storage box, and fixed on the metal powder storage box respectively, and a plurality of coils arranged in a layer are configured inside the plurality of ribs.

Abstract: The present application discloses a communication method, a terminal, a server, a communication system, a computer device and a medium. The communication method includes that a server establishes a connection and feeds back a display control in response to requests of a first terminal and a second terminal; then, the server feeds back function feedback information in response to a function request of the first terminal, and feeds back function feedback information in response to a menu request of the second terminal; and the servers presents multiple interface components and maintains and updates each interface component in response to management operation of a third user.

Abstract: A battery includes a battery cell and processing circuitry. The processing circuitry is configured to determine an estimated temperature of the battery cell as a function of various models. The models include a battery cell heat generation model that receives a first input indicative of a battery voltage measurement, a second input indicative of a voltage corresponding to a battery open-circuit voltage (OCV) model, and a third input indicative of a battery current measurement. The models also include a gas gauge and system heat generation model that receives the third input. The models also include a battery and gas gauge heat transfer model that receives a fourth input indicative of a gas gauge temperature measurement.

Abstract: A nonreversible anti-backlash nut comprises a first nut body and a second nut which are provided with internal threads, and a shrinkage ring which is capable of shrinking inwards in a radial direction and is disposed between the first nut body and the second nut body. Nut body chamfers are separately arranged on sides, connected with the shrinkage ring, of the first nut body and the second nut body. A shrinkage ring chamfer is arranged at a position, corresponding to the nut body chamfers, of the shrinkage ring. After the nut is assembled, the shrinkage ring provides a shrinkage force to push, via the chamfers, the first nut body and the second nut body away from each other, so that an axial clearance of the nut is eliminated. Compared with the prior art, the nut has a better and more uniform clearance elimination effect.

Abstract: The invention relates to a split-type nut assembly. The split-type nut assembly comprises a first nut and a second nut which are completely separated from each other. The first nut and the second nut have identical pitches and leads and are matched with each other or move relative to each other on a threaded shaft. Compared with the prior art, the split-type nut assembly has the advantages of being good in clearance elimination effect, long in service life, convenient to disassemble and the like.

Abstract: A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 ? or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.

Abstract: The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed using metalorganic vapor phase epitaxy (MOVPE).

Abstract: A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 ? and 24 ? thick, respectively.

Abstract: A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.

Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.

Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.

Abstract: The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed using metalorganic vapor phase epitaxy (MOVPE).

Abstract: A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 ? or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.