Patents by Inventor Guangyu Liu

Guangyu Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11435325
    Abstract: The present invention belongs to the technical field of analysis and detection and provides a method for detecting a selenoamino acid in a selenoprotein. The detection method includes: (1): mixing 10-30 mg of a selenoprotein sample with hydrochloric acid, and hydrolyzing with microwaves at 140-170° C. for 10-40 min to obtain a hydrolysate; (2): adjusting pH of the hydrolysate to 6-8 to obtain a pretreated solution; and, (3): detecting a selenoamino acid in the pretreated solution with high performance liquid chromatography-hydride generation-atomic fluorescence spectrometry (HPLC-HG-AFS) to obtain a content of the selenoamino acid. The method is simple in operation and provides an accurate and reliable result, and also reduces time and cost.
    Type: Grant
    Filed: August 20, 2020
    Date of Patent: September 6, 2022
    Assignee: ENSHI TUJIA AND MEAO AUTONOMOUS PREFECTURE ACADEMY OF AGRILCULTURAL SCIENCE (ENSHI TUJIA AND MIAO AUTONOMOUS PREFECTURE SELENIUM APPLICATION TECHNOLOGY AND PRODUCT DEVELOPMENT INSTITUTE)
    Inventors: Yongbo Chen, Shuqin Liu, Chaoyang Zhang, Baishun Hu, Weidong Li, Guangyu Huang, E Chen, Bang Qin, Yong Qu
  • Publication number: 20220276383
    Abstract: A system and method for rock mass structure detection and dangerous rock detection including a rock mass structure automated detection device and a server. The rock mass structure automated detection device includes a three-dimensional laser scanning device and a two-dimensional image acquisition device for respectively acquiring three-dimensional laser point cloud data and a two-dimensional image of a tunnel construction region. The server communicates with the rock mass structure automated detection device and includes a block structure three-dimensional modeling module and a block structure geometric stability analysis module.
    Type: Application
    Filed: July 13, 2020
    Publication date: September 1, 2022
    Applicant: SHANDONG UNIVERSITY
    Inventors: Shucai LI, Liping LI, Shaoshuai SHI, Hongliang LIU, Zongqing ZHOU, Jing WANG, Chengshuai QIN, Jie HU, Hongyun FAN, Guangyu YANG
  • Publication number: 20220278120
    Abstract: A method used in forming a memory array, comprises forming a substrate comprising a conductive tier, an insulator etch-stop tier above the conductive tier, a select gate tier above the insulator etch-stop tier, and a stack comprising vertically-alternating insulative tiers and wordline tiers above the select gate tier. Etching is conducted through the insulative tiers, the wordline tiers, and the select gate tier to and stopping on the insulator etch-stop tier to form channel openings that have individual bottoms comprising the insulator etch-stop tier. The insulator etch-stop tier is penetrated through to extend individual of the channel openings there-through to the conductive tier. Channel material is formed in the individual channel openings elevationally along the insulative tiers, the wordline tiers, and the select gate tier and is directly electrically coupled with the conductive material in the conductive tier. Structure independent of method is disclosed.
    Type: Application
    Filed: May 17, 2022
    Publication date: September 1, 2022
    Applicant: Micron Technology, Inc.
    Inventors: Luan C. Tran, Guangyu Huang, Haitao Liu
  • Patent number: 11430895
    Abstract: A transistor comprises a lower contact structure, a channel structure, a dielectric fill structure, and an upper contact structure. The lower contact structure comprises a first oxide semiconductive material. The channel structure contacts the lower contact structure and comprises a second oxide semiconductive material having a smaller atomic concentration of one or more metals than the first oxide semiconductive material. The dielectric fill structure contacts an inner side surface of the channel structure and has a recessed upper surface relative to the channel structure. The upper contact structure comprises a third oxide semiconductive material having a greater atomic concentration of the one or more metals than the channel structure. The upper contact structure comprises a first portion contacting the upper surface of the dielectric fill structure and the inner side surface of the channel structure, and a second portion contacting the upper surface of the channel structure.
    Type: Grant
    Filed: June 3, 2020
    Date of Patent: August 30, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Kamal M. Karda, Guangyu Huang, Haitao Liu, Akira Goda
  • Publication number: 20220252280
    Abstract: An air purification includes a body portion, having a first installation space, a second installation space and a third installation space; a positive/negative ion module, removably mounted in the first installation space and controlled to generate positive ions and/or negative ions; a plasma module, removably mounted in the second installation space and controlled to generate plasmas; and a power supply module, removably mounted in the third installation space and configured to supply power for the positive/negative ion module and the plasma module.
    Type: Application
    Filed: February 3, 2022
    Publication date: August 11, 2022
    Inventors: Shuguang Zhang, Yuhui Kuang, Hui Zhai, Guangyu Shen, Hongsheng Liu, Michael J. Birnkrant
  • Patent number: 11380699
    Abstract: A method used in forming a memory array, comprises forming a substrate comprising a conductive tier, an insulator etch-stop tier above the conductive tier, a select gate tier above the insulator etch-stop tier, and a stack comprising vertically-alternating insulative tiers and wordline tiers above the select gate tier. Etching is conducted through the insulative tiers, the wordline tiers, and the select gate tier to and stopping on the insulator etch-stop tier to form channel openings that have individual bottoms comprising the insulator etch-stop tier. The insulator etch-stop tier is penetrated through to extend individual of the channel openings there-through to the conductive tier. Channel material is formed in the individual channel openings elevationally along the insulative tiers, the wordline tiers, and the select gate tier and is directly electrically coupled with the conductive material in the conductive tier. Structure independent of method is disclosed.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: July 5, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Luan C. Tran, Guangyu Huang, Haitao Liu
  • Publication number: 20210404507
    Abstract: A nonreversible anti-backlash nut comprises a first nut body and a second nut which are provided with internal threads, and a shrinkage ring which is capable of shrinking inwards in a radial direction and is disposed between the first nut body and the second nut body. Nut body chamfers are separately arranged on sides, connected with the shrinkage ring, of the first nut body and the second nut body. A shrinkage ring chamfer is arranged at a position, corresponding to the nut body chamfers, of the shrinkage ring. After the nut is assembled, the shrinkage ring provides a shrinkage force to push, via the chamfers, the first nut body and the second nut body away from each other, so that an axial clearance of the nut is eliminated. Compared with the prior art, the nut has a better and more uniform clearance elimination effect.
    Type: Application
    Filed: September 14, 2018
    Publication date: December 30, 2021
    Inventors: Kai ZENG, Zhigan WU, Wufeng YUAN, Yiming ZOU, Guangyu LIU
  • Publication number: 20210293311
    Abstract: The invention relates to a split-type nut assembly. The split-type nut assembly comprises a first nut and a second nut which are completely separated from each other. The first nut and the second nut have identical pitches and leads and are matched with each other or move relative to each other on a threaded shaft. Compared with the prior art, the split-type nut assembly has the advantages of being good in clearance elimination effect, long in service life, convenient to disassemble and the like.
    Type: Application
    Filed: September 14, 2018
    Publication date: September 23, 2021
    Inventors: Kai ZENG, Zhigan WU, Yanmeng GUO, Wufeng YUAN, Guangyu LIU
  • Patent number: 10115859
    Abstract: A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 ? or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: October 30, 2018
    Assignee: Lehigh University
    Inventors: Nelson Tansu, Hongping Zhao, Guangyu Liu, Gensheng Huang
  • Patent number: 9525117
    Abstract: The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed using metalorganic vapor phase epitaxy (MOVPE).
    Type: Grant
    Filed: December 8, 2010
    Date of Patent: December 20, 2016
    Assignee: LEHIGH UNIVERSITY
    Inventors: Nelson Tansu, Hua Tong, Jing Zhang, Guangyu Liu, Gensheng Huang
  • Patent number: 8907321
    Abstract: A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 ? and 24 ? thick, respectively.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: December 9, 2014
    Assignee: Lehigh Univeristy
    Inventors: Nelson Tansu, Hongping Zhao, Guangyu Liu, Ronald Arif
  • Patent number: 8685767
    Abstract: A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.
    Type: Grant
    Filed: December 8, 2010
    Date of Patent: April 1, 2014
    Assignee: Lehigh University
    Inventors: Nelson Tansu, Hongping Zhao, Jing Zhang, Guangyu Liu
  • Patent number: 8569737
    Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.
    Type: Grant
    Filed: December 8, 2011
    Date of Patent: October 29, 2013
    Assignee: Lehigh University
    Inventors: Nelson Tansu, Xiaohang Li, Hongping Zhao, Guangyu Liu, James Foster Gilchrist, Pisist Kumnorkaew
  • Publication number: 20120217472
    Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.
    Type: Application
    Filed: December 8, 2011
    Publication date: August 30, 2012
    Applicant: Lehigh University
    Inventors: Nelson Tansu, Xiaohang Li, Hongping Zhao, Guangyu Liu, James Foster Gilchrist, Pisist Kumnorkaew
  • Publication number: 20110240082
    Abstract: The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed using metalorganic vapor phase epitaxy (MOVPE).
    Type: Application
    Filed: December 8, 2010
    Publication date: October 6, 2011
    Applicant: Lehigh University
    Inventors: Nelson Tansu, Hua Tong, Jing Zhang, Guangyu Liu, Gensheng Huang
  • Publication number: 20110204328
    Abstract: A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 ? or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.
    Type: Application
    Filed: December 15, 2010
    Publication date: August 25, 2011
    Applicant: Lehigh University
    Inventors: Nelson Tansu, Hongping Zhao, Guangyu Liu, Gensheng Huang
  • Publication number: 20110147702
    Abstract: A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 ? and 24 ? thick, respectively.
    Type: Application
    Filed: December 14, 2010
    Publication date: June 23, 2011
    Applicant: Lehigh University
    Inventors: Nelson Tansu, Hongping Zhao, Guangyu Liu, Ronald Arif
  • Publication number: 20110133157
    Abstract: A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.
    Type: Application
    Filed: December 8, 2010
    Publication date: June 9, 2011
    Applicant: Lehigh University
    Inventors: Nelson Tansu, Hongping Zhao, Jing Zhang, Guangyu Liu
  • Patent number: 5677331
    Abstract: The invention relates to a synergistic antimalarial composition which comprises the antimalarial agent benflumetol and also an antimalarial agent from the artemisinine group such as artemether. The composition can be formulated into solid dosage forms such as tablets and is useful for the treatment of drug resistant malaria.
    Type: Grant
    Filed: March 23, 1994
    Date of Patent: October 14, 1997
    Assignees: Ciba-Geigy AG, Institute of Microbiology and Epidemiology, Academy of Military Medical Sciences
    Inventors: Yiqing Zhou, Dianxi Ning, Shufen Wang, Deben Ding, Guofu Li, Chengqi Shan, Guangyu Liu