Patents by Inventor Guangyu Liu

Guangyu Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10381365
    Abstract: Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, and having vertically-stacked memory cells within the conductive levels. An opening extends through the stack. Channel material is within the opening and along the memory cells. At least some of the channel material contains germanium.
    Type: Grant
    Filed: August 15, 2017
    Date of Patent: August 13, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Haitao Liu, Chandra Mouli, Sergei Koveshnikov, Dimitrios Pavlopoulos, Guangyu Huang
  • Publication number: 20190206889
    Abstract: Some embodiments include apparatuses, and methods of forming the apparatuses. Some of the apparatuses include a first group of conductive materials interleaved with a first group of dielectric materials, a pillar extending through the conductive materials and the dielectric materials, memory cells located along the first pillar, a conductive contact coupled to a conductive material of the first group of conductive materials, and additional pillars extending through a second group of conductive materials and a second group of dielectric materials. The second pillar includes a first portion coupled to a conductive region, a second portion, a third portion, and a fourth portion coupled to the conductive contact. The second portion is located between the first and third portions. The second portion of each of the additional pillars is part of a piece of material extending from a first pillar to a second pillar of the additional pillars.
    Type: Application
    Filed: December 29, 2017
    Publication date: July 4, 2019
    Inventors: Akira Goda, Haitao Liu, Jin Chen, Guangyu Huang, Mojtaba Asadirad
  • Patent number: 10290642
    Abstract: Flash memory technology is disclosed. In one example, a flash memory cell can include a charge storage structure, a control gate laterally separated from the charge storage structure, and at least four dielectric layers disposed between the control gate and the charge storage structure. Associated systems and methods are also disclosed.
    Type: Grant
    Filed: September 30, 2017
    Date of Patent: May 14, 2019
    Assignee: Intel Corporation
    Inventors: Haitao Liu, Guangyu Huang, Krishna K. Parat, Shrotri B. Kunal, Srikant Jayanti
  • Patent number: 10115859
    Abstract: A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 ? or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: October 30, 2018
    Assignee: Lehigh University
    Inventors: Nelson Tansu, Hongping Zhao, Guangyu Liu, Gensheng Huang
  • Patent number: 9525117
    Abstract: The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed using metalorganic vapor phase epitaxy (MOVPE).
    Type: Grant
    Filed: December 8, 2010
    Date of Patent: December 20, 2016
    Assignee: LEHIGH UNIVERSITY
    Inventors: Nelson Tansu, Hua Tong, Jing Zhang, Guangyu Liu, Gensheng Huang
  • Patent number: 8907321
    Abstract: A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 ? and 24 ? thick, respectively.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: December 9, 2014
    Assignee: Lehigh Univeristy
    Inventors: Nelson Tansu, Hongping Zhao, Guangyu Liu, Ronald Arif
  • Patent number: 8685767
    Abstract: A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.
    Type: Grant
    Filed: December 8, 2010
    Date of Patent: April 1, 2014
    Assignee: Lehigh University
    Inventors: Nelson Tansu, Hongping Zhao, Jing Zhang, Guangyu Liu
  • Patent number: 8569737
    Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.
    Type: Grant
    Filed: December 8, 2011
    Date of Patent: October 29, 2013
    Assignee: Lehigh University
    Inventors: Nelson Tansu, Xiaohang Li, Hongping Zhao, Guangyu Liu, James Foster Gilchrist, Pisist Kumnorkaew
  • Publication number: 20120217472
    Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.
    Type: Application
    Filed: December 8, 2011
    Publication date: August 30, 2012
    Applicant: Lehigh University
    Inventors: Nelson Tansu, Xiaohang Li, Hongping Zhao, Guangyu Liu, James Foster Gilchrist, Pisist Kumnorkaew
  • Publication number: 20110240082
    Abstract: The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed using metalorganic vapor phase epitaxy (MOVPE).
    Type: Application
    Filed: December 8, 2010
    Publication date: October 6, 2011
    Applicant: Lehigh University
    Inventors: Nelson Tansu, Hua Tong, Jing Zhang, Guangyu Liu, Gensheng Huang
  • Publication number: 20110204328
    Abstract: A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 ? or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.
    Type: Application
    Filed: December 15, 2010
    Publication date: August 25, 2011
    Applicant: Lehigh University
    Inventors: Nelson Tansu, Hongping Zhao, Guangyu Liu, Gensheng Huang
  • Publication number: 20110147702
    Abstract: A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 ? and 24 ? thick, respectively.
    Type: Application
    Filed: December 14, 2010
    Publication date: June 23, 2011
    Applicant: Lehigh University
    Inventors: Nelson Tansu, Hongping Zhao, Guangyu Liu, Ronald Arif
  • Publication number: 20110133157
    Abstract: A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.
    Type: Application
    Filed: December 8, 2010
    Publication date: June 9, 2011
    Applicant: Lehigh University
    Inventors: Nelson Tansu, Hongping Zhao, Jing Zhang, Guangyu Liu
  • Patent number: 5677331
    Abstract: The invention relates to a synergistic antimalarial composition which comprises the antimalarial agent benflumetol and also an antimalarial agent from the artemisinine group such as artemether. The composition can be formulated into solid dosage forms such as tablets and is useful for the treatment of drug resistant malaria.
    Type: Grant
    Filed: March 23, 1994
    Date of Patent: October 14, 1997
    Assignees: Ciba-Geigy AG, Institute of Microbiology and Epidemiology, Academy of Military Medical Sciences
    Inventors: Yiqing Zhou, Dianxi Ning, Shufen Wang, Deben Ding, Guofu Li, Chengqi Shan, Guangyu Liu