Patents by Inventor Guangyuan LU
Guangyuan LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11679978Abstract: The present disclosure provides a method for preparing a multi-layer hexagonal boron nitride film, including: preparing a substrate; preparing a boron-containing solid catalyst, and disposing the boron-containing solid catalyst on the substrate; annealing the boron-containing solid catalyst to melt the boron-containing solid catalyst; feeding a nitrogen-containing gas and a protecting gas to an atmosphere in which the melted boron-containing solid catalyst resides, the nitrogen-containing gas reacts with the boron-containing solid catalyst to form the multi-layer hexagonal boron nitride film on a surface of the substrate. The method for preparing a multi-layer hexagonal boron nitride film can prepare a hexagonal boron nitride film having a lateral size in the order of inches and a thickness from several nanometers to several hundred nanometers on the surface of the substrate, providing a favorable basis for the application of hexagonal boron nitride in the field of two-dimensional material devices.Type: GrantFiled: October 14, 2019Date of Patent: June 20, 2023Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Zhiyuan Shi, Tianru Wu, Guangyuan Lu, Xiujun Wang, Chao Zhang, Haomin Wang, Xiaoming Xie
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Publication number: 20230063711Abstract: A method for displaying item information includes: displaying by an audience terminal, category information corresponding to a combined item object and an interaction operation control on an item display interface of a live broadcast room, in which the interaction operation control is configured to view basic information of sub-item objects and the combined item object includes at least two sub-item objects of the same category; in response to a trigger operation of the interaction operation control, determining by the audience terminal, a target sub-item object matching specified geographic information of the audience terminal from the at least two sub-item objects; and displaying by the audience terminal, basic information corresponding to the target sub-item object on the item display interface.Type: ApplicationFiled: April 4, 2022Publication date: March 2, 2023Inventors: Peng Liu, Zhiguo Liu, Haolei Yang, Yayun Zuo, Zhenhang Ning, Wei Gao, Kai Yang, Zhuai Wang, Jifeng Yao, Guangyuan Lu, Zhen Ma, Wei Ni
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Publication number: 20210363010Abstract: The present disclosure provides a method for preparing a multi-layer hexagonal boron nitride film, including: preparing a substrate; preparing a boron-containing solid catalyst, and disposing the boron-containing solid catalyst on the substrate; annealing the boron-containing solid catalyst to melt the boron-containing solid catalyst; feeding a nitrogen-containing gas and a protecting gas to an atmosphere in which the melted boron-containing solid catalyst resides, the nitrogen-containing gas reacts with the boron-containing solid catalyst to form the multi-layer hexagonal boron nitride film on a surface of the substrate. The method for preparing a multi-layer hexagonal boron nitride film can prepare a hexagonal boron nitride film having a lateral size in the order of inches and a thickness from several nanometers to several hundred nanometers on the surface of the substrate, providing a favorable basis for the application of hexagonal boron nitride in the field of two-dimensional material devices.Type: ApplicationFiled: October 14, 2019Publication date: November 25, 2021Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Zhiyuan SHI, Tianru WU, Guangyuan LU, Xiujun WANG, Chao ZHANG, Haomin WANG, Xiaoming XIE
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Patent number: 10253428Abstract: The present disclosure provides a local carbon-supply device and a method for preparing a wafer-level graphene single crystal by local carbon supply. The method includes: providing the local carbon-supply device; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, and introducing a gaseous carbon source into the local carbon-supply device to grow the graphene single crystal on the nickel-copper alloy substrate. A graphene prepared by embodiments of the present disclosure has the advantages of good crystallinity of a crystal domain, simple preparation condition, low cost, a wider window of condition parameters required for growth, and good repeatability, which lays a foundation for wide application of the wafer-level graphene single crystal in a graphene apparatus and other fields.Type: GrantFiled: June 4, 2015Date of Patent: April 9, 2019Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Tianru Wu, Xuefu Zhang, Guangyuan Lu, Chao Yang, Haomin Wang, Xiaoming Xie, Mianheng Jiang
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Patent number: 10017878Abstract: The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.Type: GrantFiled: March 26, 2015Date of Patent: July 10, 2018Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Haomin Wang, Shujie Tang, Guangyuan Lu, Tianru Wu, Da Jiang, Guqiao Ding, Xuefu Zhang, Hong Xie, Xiaoming Xie, Mianheng Jiang
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Publication number: 20180002831Abstract: The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.Type: ApplicationFiled: March 26, 2015Publication date: January 4, 2018Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: HAOMIN WANG, SHUJIE TANG, GUANGYUAN LU, TIANRU WU, DA JIANG, GUQIAO DING, XUEFU ZHANG, HONG XIE, XIAOMING XIE, MIANHENG JIANG
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Publication number: 20170130360Abstract: The present disclosure provides a local carbon-supply device and a method for preparing a wafer-level graphene single crystal by local carbon supply. The method includes: providing the local carbon-supply device; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, and introducing a gaseous carbon source into the local carbon-supply device to grow the graphene single crystal on the nickel-copper alloy substrate. A graphene prepared by embodiments of the present disclosure has the advantages of good crystallinity of a crystal domain, simple preparation condition, low cost, a wider window of condition parameters required for growth, and good repeatability, which lays a foundation for wide application of the wafer-level graphene single crystal in a graphene apparatus and other fields.Type: ApplicationFiled: June 4, 2015Publication date: May 11, 2017Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Tianru WU, Xuefu ZHANG, Guangyuan LU, Chao YANG, Haomin WANG, Xiaoming XIE, Mianheng JIANG