Patents by Inventor Guangyun Zhang

Guangyun Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12223630
    Abstract: An image data processing method, a system and an electronic device are provided. The method includes: recording to-be-processed database data as a target image set; performing sharpness calculation on target images in the target image set by a weighted gradient algorithm, and removing, if sharpness of at least one target image is smaller than a threshold, the at least one target image from the target image set; performing sharpness enhancement processing on remaining target images in the target image set; extracting feature points in the target images in the target image set and the contrast image, one by one or at intervals; and comparing and judging similarity between the target images and the contrast image by a similarity algorithm, and inputting similar target images into classified storage spaces.
    Type: Grant
    Filed: July 5, 2024
    Date of Patent: February 11, 2025
    Assignee: Air Force Medical Center, PLA
    Inventors: Guangyun Wang, Qiao Ye, Ruibo Qi, Yuan Luo, Zhusong Mei, Bingqian Guo, Longmei Fang, Chengxiang Zhu, Guiling Bi, Yao Li, Yin Zhang
  • Publication number: 20250029508
    Abstract: The present disclosure provides a group training action correction system and method combining face and gesture recognition, wherein the system includes an individual action correction moment determination module, which is configured to determine a nearest individual action correction moment after a current training progress on a preset training progress axis; and an individual action correction module, which is configured to correct and prompt individually action for the action correction object based on a standard gesture, an action to be corrected, and a personnel identity when entering the individual correction moment.
    Type: Application
    Filed: July 12, 2024
    Publication date: January 23, 2025
    Inventors: Qiao Ye, Guangyun Wang, Wei Sun, Ruibo Qi, Yuan Luo, Zhusong Mei, Bingqian Guo, Longmei Fang, Chengxiang Zhu, Guiling Bi, Yao Li, Yin Zhang
  • Publication number: 20250022109
    Abstract: An image data processing method, a system and an electronic device are provided. The method includes: recording to-be-processed database data as a target image set; performing sharpness calculation on target images in the target image set by a weighted gradient algorithm, and removing, if sharpness of at least one target image is smaller than a threshold, the at least one target image from the target image set; performing sharpness enhancement processing on remaining target images in the target image set; extracting feature points in the target images in the target image set and the contrast image, one by one or at intervals; and comparing and judging similarity between the target images and the contrast image by a similarity algorithm, and inputting similar target images into classified storage spaces.
    Type: Application
    Filed: July 5, 2024
    Publication date: January 16, 2025
    Inventors: Guangyun Wang, Qiao Ye, Ruibo Qi, Yuan Luo, Zhusong Mei, Bingqian Guo, Longmei Fang, Chengxiang Zhu, Guiling Bi, Yao Li, Yin Zhang
  • Patent number: 8865013
    Abstract: A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition.
    Type: Grant
    Filed: August 15, 2011
    Date of Patent: October 21, 2014
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Yi Guo, Jerry Lee, Raymond L. Lavoie, Jr., Guangyun Zhang
  • Patent number: 8790160
    Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition comprising, as initial components: water; an abrasive; at least one of a phthalic acid, a phthalic anhydride, a phthalate compound and a phthalic acid derivative; a chelating agent; a poly(acrylic acid-co-maleic acid); and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.
    Type: Grant
    Filed: April 28, 2011
    Date of Patent: July 29, 2014
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Jaeseok Lee, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
  • Patent number: 8568610
    Abstract: A chemical mechanical polishing composition is provided, comprising, as initial components: water, an abrasive; a diquaternary substance according to formula (I); a derivative of guanidine according to formula (II); and, optionally, a quaternary ammonium salt. Also, provided is a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing the chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6.
    Type: Grant
    Filed: September 20, 2010
    Date of Patent: October 29, 2013
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Zhendong Liu, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
  • Patent number: 8513126
    Abstract: A chemical mechanical polishing slurry composition is provided, having, as initial components: water; an abrasive, wherein the abrasive is colloidal silica abrasive; a halogenated quaternary ammonium compound according to formula (I); optionally, a diquaternary substance according to formula (II); and, optionally, a pH adjusting agent selected from phosphoric acid, nitric acid, sulfuric acid, hydrochloric acid, ammonium hydroxide and potassium hydroxide; wherein the chemical mechanical polishing slurry composition has a pH of 2 to <7. Also, provided are methods for making the chemical mechanical polishing slurry composition and for using the chemical mechanical polishing composition to polish a substrate.
    Type: Grant
    Filed: September 22, 2010
    Date of Patent: August 20, 2013
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Zhendong Liu, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
  • Patent number: 8496843
    Abstract: A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the su
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: July 30, 2013
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
  • Patent number: 8492277
    Abstract: A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an acyclic organosulfonic acid compound, wherein the acyclic organosulfonic acid compound has an acyclic hydrophobic portion having 6 to 30 carbon atoms and a nonionic acyclic hydrophilic portion having 10 to 300 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: July 23, 2013
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc
    Inventors: Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
  • Patent number: 8491808
    Abstract: A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon, silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; and a substance according to formula I wherein each of R1, R2, R3, R4, R5, R6 and R7 is a bridging group having a formula ā€”(CH2)nā€”, wherein n is an integer selected from 1 to 10; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least s
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: July 23, 2013
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
  • Patent number: 8444728
    Abstract: A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R8 is independently selected from hydrogen, a saturated or unsaturated C1-15 alkyl group, C6-15 aryl group, C6-15 aralkyl group, C6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).
    Type: Grant
    Filed: June 12, 2012
    Date of Patent: May 21, 2013
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
  • Patent number: 8431490
    Abstract: A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and a substance according to formula I wherein R1, R2 and R3 are each independently selected from a C1-4 alky group; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein the substance according to formula I included in the chemical mechanical polishing composition provides an enhanced silicon oxide removal rate and an improved polishing defectivity performance; and, wherein at least some of the silicon oxide is removed from the substrate.
    Type: Grant
    Filed: March 31, 2010
    Date of Patent: April 30, 2013
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
  • Publication number: 20130045598
    Abstract: A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition.
    Type: Application
    Filed: August 15, 2011
    Publication date: February 21, 2013
    Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Yi Guo, Jerry Lee, Raymond L. Lavoie, JR., Guangyun Zhang
  • Patent number: 8309468
    Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition consisting essentially of, as initial components: water; an abrasive; a material selected from ethylene diamine tetra acetic acid and salts thereof; and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.
    Type: Grant
    Filed: April 28, 2011
    Date of Patent: November 13, 2012
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Jaeseok Lee, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
  • Publication number: 20120276819
    Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition comprising, as initial components: water; an abrasive; at least one of a phthalic acid, a phthalic anhydride, a phthalate compound and a phthalic acid derivative; a chelating agent; a poly(acrylic acid-co-maleic acid); and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.
    Type: Application
    Filed: April 28, 2011
    Publication date: November 1, 2012
    Inventors: Jaeseok Lee, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
  • Publication number: 20120276742
    Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition consisting essentially of, as initial components: water; an abrasive; a material selected from ethylene diamine tetra acetic acid and salts thereof; and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.
    Type: Application
    Filed: April 28, 2011
    Publication date: November 1, 2012
    Inventors: Jaeseok Lee, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
  • Publication number: 20120258598
    Abstract: A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R8 is independently selected from hydrogen, a saturated or unsaturated C1-15 alkyl group, C6-15 aryl group, C6-15 aralkyl group, C6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).
    Type: Application
    Filed: June 12, 2012
    Publication date: October 11, 2012
    Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
  • Patent number: 8232208
    Abstract: A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 40 wt % abrasive having an average particle size of 5 to 150 nm; 0.001 to 1 wt % of an adamantyl substance according to formula (II); 0 to 1 wt % diquaternary substance according to formula (I); and, 0 to 1 wt % of a quaternary ammonium compound. Also, provided is a method for chemical mechanical polishing using the chemical mechanical polishing composition.
    Type: Grant
    Filed: June 15, 2010
    Date of Patent: July 31, 2012
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
  • Publication number: 20120070989
    Abstract: A chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; a diquaternary substance according to formula (I), wherein each X is independently selected from N and P; wherein R1 is selected from a saturated or unsaturated C1-C15 alkyl group, a C6-C15 aryl group and a C6-C15 aralkyl group; wherein R2, R3, R4, R5, R6 and R7 are each independently selected from selected from a hydrogen, a saturated or unsaturated C1-C15 alkyl group, a C6-C15 aryl group, a C6-C15 aralkyl group and a C6-C15 alkaryl group; and, wherein the anion in formula (I) can be any anion or combination of anions that balance the 2+ charge on the cation in formula (I); a derivative of guanidine according to formula (II), wherein R8 is selected from a hydrogen, a saturated or unsaturated C1-C15 alkyl group, a C6-C15 aryl group, a C6-C15 aralkyl group and a C6-C15 alkaryl group; wherein R9, R10, R11 and R12 are each independently selected from a hydrogen, a saturated or unsaturated C1-C15 alkyl group, a C6-
    Type: Application
    Filed: September 20, 2010
    Publication date: March 22, 2012
    Inventors: Zhendong Liu, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
  • Publication number: 20120070990
    Abstract: A chemical mechanical polishing slurry composition, comprising, as initial components: water; an abrasive; a halogenated quaternary ammonium compound according to formula (I), wherein R8 is selected from a C1-10 alkyl group and a C1-10 hydroxyalkyl group; wherein X1 is a halide selected from chloride, bromide, iodide and fluoride; wherein R9, R10 and R11 are each independently selected from a saturated or unsaturated C1-10 alkyl group, a C1-10 haloalkyl group, a C6-15 aryl group, a C6-15 haloaryl group, a C6-15 arylalkyl group and a C6-15 haloarylalkyl; and, wherein the anion in formula (I) can be any anion that balances the + charge on the cation in formula (I); and, optionally, a diquaternary substance according to formula (II), wherein each A is independently selected from N and P; wherein R1 is selected from a saturated or unsaturated C1-C15 alkyl group, a C6-C15 aryl group and a C6-C15 aralkyl group; wherein R2, R3, R4, R5, R6 and R7 are each independently selected from selected from a hydrogen, a satura
    Type: Application
    Filed: September 22, 2010
    Publication date: March 22, 2012
    Inventors: Zhendong Liu, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang