Patents by Inventor Guangyun Zhang
Guangyun Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11947211Abstract: A display panel includes: a liquid crystal cell; an optical layer configured to transmit part of light incident onto the optical layer whose polarization direction is parallel to a transmission axis of the optical layer, and reflect a remaining part of the light incident onto the optical layer; a first polarization structure configured to transmit part of light incident onto the first polarization structure whose polarization direction is parallel to a transmission axis of the first polarization structure, and absorb a remaining part of the light incident onto the first polarization structure; and a second polarization structure configured to transmit part of light incident onto the second polarization structure whose polarization direction is parallel to a transmission axis of the second polarization structure, and absorb a remaining part of the light incident onto the second polarization structure.Type: GrantFiled: August 5, 2021Date of Patent: April 2, 2024Assignees: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Jing Wang, Yangyang Cai, Guojian Qu, Guangyun Tong, Fan Yang, Chengwei Wang, Zhanchang Bu, Bochang Wang, Yu Zhang, Hetao Wang, Xiang Li
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Patent number: 11927878Abstract: Provided is a projection screen. The projection screen includes a first transparent cover plate, a transparent touch panel, and a first nanoparticle layer, wherein the first nanoparticle layer and the first transparent cover plate are sequentially laminated on one side of the transparent touch panel, and the first nanoparticle layer comprises a plurality of dispersed nanoparticles of different particle sizes. A method for manufacturing a projection screen, a projection display system, and a projection display method are also provided.Type: GrantFiled: June 9, 2021Date of Patent: March 12, 2024Assignees: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Guangyun Tong, Yu Zhang, Zhuolong Li, Xuefei Qin, Junning Su
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Spark plug heat rating measurement method and system based on spark discharge current active heating
Patent number: 11923663Abstract: In the spark plug heat rating measurement method and system based on spark discharge current active heating, the spark plug is installed in a constant-temperature water jacket cooling chamber with a specific torque. A constant spark discharge current control module is connected to the high-voltage terminal of the spark plug, to provide real-time controlled discharge current to heat up the high-voltage central electrode of the spark plug. During the spark discharge process, the temperature change of the high-voltage central electrode and the surrounding ceramic insulator are measured by a temperature detection module and used to determine the heat rating of the spark plug. By real time adjusting the discharge current level of the spark plug, or providing a same amount of spark energy to the spark gap, the heat ratings of spark plugs with different ceramic insulation structures can be evaluated through the temperature changes during discharge or after discharge.Type: GrantFiled: July 22, 2021Date of Patent: March 5, 2024Assignee: WEICHAI TORCH TECHNOLOGY CO., LTD.Inventors: Ming Zheng, Guangyun Chen, Xiao Yu, Tangliang Zhang, Jin Qian, Hua Zhu -
Patent number: 8865013Abstract: A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition.Type: GrantFiled: August 15, 2011Date of Patent: October 21, 2014Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Yi Guo, Jerry Lee, Raymond L. Lavoie, Jr., Guangyun Zhang
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Patent number: 8790160Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition comprising, as initial components: water; an abrasive; at least one of a phthalic acid, a phthalic anhydride, a phthalate compound and a phthalic acid derivative; a chelating agent; a poly(acrylic acid-co-maleic acid); and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.Type: GrantFiled: April 28, 2011Date of Patent: July 29, 2014Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Jaeseok Lee, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Patent number: 8568610Abstract: A chemical mechanical polishing composition is provided, comprising, as initial components: water, an abrasive; a diquaternary substance according to formula (I); a derivative of guanidine according to formula (II); and, optionally, a quaternary ammonium salt. Also, provided is a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing the chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6.Type: GrantFiled: September 20, 2010Date of Patent: October 29, 2013Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Zhendong Liu, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Patent number: 8513126Abstract: A chemical mechanical polishing slurry composition is provided, having, as initial components: water; an abrasive, wherein the abrasive is colloidal silica abrasive; a halogenated quaternary ammonium compound according to formula (I); optionally, a diquaternary substance according to formula (II); and, optionally, a pH adjusting agent selected from phosphoric acid, nitric acid, sulfuric acid, hydrochloric acid, ammonium hydroxide and potassium hydroxide; wherein the chemical mechanical polishing slurry composition has a pH of 2 to <7. Also, provided are methods for making the chemical mechanical polishing slurry composition and for using the chemical mechanical polishing composition to polish a substrate.Type: GrantFiled: September 22, 2010Date of Patent: August 20, 2013Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Zhendong Liu, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Patent number: 8496843Abstract: A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the suType: GrantFiled: March 16, 2010Date of Patent: July 30, 2013Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Patent number: 8491808Abstract: A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon, silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; and a substance according to formula I wherein each of R1, R2, R3, R4, R5, R6 and R7 is a bridging group having a formula ā(CH2)nā, wherein n is an integer selected from 1 to 10; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least sType: GrantFiled: March 16, 2010Date of Patent: July 23, 2013Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Patent number: 8492277Abstract: A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an acyclic organosulfonic acid compound, wherein the acyclic organosulfonic acid compound has an acyclic hydrophobic portion having 6 to 30 carbon atoms and a nonionic acyclic hydrophilic portion having 10 to 300 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.Type: GrantFiled: March 16, 2010Date of Patent: July 23, 2013Assignee: Rohm and Haas Electronic Materials CMP Holdings, IncInventors: Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Patent number: 8444728Abstract: A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R8 is independently selected from hydrogen, a saturated or unsaturated C1-15 alkyl group, C6-15 aryl group, C6-15 aralkyl group, C6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).Type: GrantFiled: June 12, 2012Date of Patent: May 21, 2013Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Patent number: 8431490Abstract: A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and a substance according to formula I wherein R1, R2 and R3 are each independently selected from a C1-4 alky group; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein the substance according to formula I included in the chemical mechanical polishing composition provides an enhanced silicon oxide removal rate and an improved polishing defectivity performance; and, wherein at least some of the silicon oxide is removed from the substrate.Type: GrantFiled: March 31, 2010Date of Patent: April 30, 2013Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Publication number: 20130045598Abstract: A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition.Type: ApplicationFiled: August 15, 2011Publication date: February 21, 2013Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Yi Guo, Jerry Lee, Raymond L. Lavoie, JR., Guangyun Zhang
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Patent number: 8309468Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition consisting essentially of, as initial components: water; an abrasive; a material selected from ethylene diamine tetra acetic acid and salts thereof; and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.Type: GrantFiled: April 28, 2011Date of Patent: November 13, 2012Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Jaeseok Lee, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Publication number: 20120276819Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition comprising, as initial components: water; an abrasive; at least one of a phthalic acid, a phthalic anhydride, a phthalate compound and a phthalic acid derivative; a chelating agent; a poly(acrylic acid-co-maleic acid); and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.Type: ApplicationFiled: April 28, 2011Publication date: November 1, 2012Inventors: Jaeseok Lee, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Publication number: 20120276742Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition consisting essentially of, as initial components: water; an abrasive; a material selected from ethylene diamine tetra acetic acid and salts thereof; and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.Type: ApplicationFiled: April 28, 2011Publication date: November 1, 2012Inventors: Jaeseok Lee, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Publication number: 20120258598Abstract: A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R8 is independently selected from hydrogen, a saturated or unsaturated C1-15 alkyl group, C6-15 aryl group, C6-15 aralkyl group, C6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).Type: ApplicationFiled: June 12, 2012Publication date: October 11, 2012Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Patent number: 8232208Abstract: A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 40 wt % abrasive having an average particle size of 5 to 150 nm; 0.001 to 1 wt % of an adamantyl substance according to formula (II); 0 to 1 wt % diquaternary substance according to formula (I); and, 0 to 1 wt % of a quaternary ammonium compound. Also, provided is a method for chemical mechanical polishing using the chemical mechanical polishing composition.Type: GrantFiled: June 15, 2010Date of Patent: July 31, 2012Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Publication number: 20120070990Abstract: A chemical mechanical polishing slurry composition, comprising, as initial components: water; an abrasive; a halogenated quaternary ammonium compound according to formula (I), wherein R8 is selected from a C1-10 alkyl group and a C1-10 hydroxyalkyl group; wherein X1 is a halide selected from chloride, bromide, iodide and fluoride; wherein R9, R10 and R11 are each independently selected from a saturated or unsaturated C1-10 alkyl group, a C1-10 haloalkyl group, a C6-15 aryl group, a C6-15 haloaryl group, a C6-15 arylalkyl group and a C6-15 haloarylalkyl; and, wherein the anion in formula (I) can be any anion that balances the + charge on the cation in formula (I); and, optionally, a diquaternary substance according to formula (II), wherein each A is independently selected from N and P; wherein R1 is selected from a saturated or unsaturated C1-C15 alkyl group, a C6-C15 aryl group and a C6-C15 aralkyl group; wherein R2, R3, R4, R5, R6 and R7 are each independently selected from selected from a hydrogen, a saturaType: ApplicationFiled: September 22, 2010Publication date: March 22, 2012Inventors: Zhendong Liu, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Publication number: 20120070989Abstract: A chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; a diquaternary substance according to formula (I), wherein each X is independently selected from N and P; wherein R1 is selected from a saturated or unsaturated C1-C15 alkyl group, a C6-C15 aryl group and a C6-C15 aralkyl group; wherein R2, R3, R4, R5, R6 and R7 are each independently selected from selected from a hydrogen, a saturated or unsaturated C1-C15 alkyl group, a C6-C15 aryl group, a C6-C15 aralkyl group and a C6-C15 alkaryl group; and, wherein the anion in formula (I) can be any anion or combination of anions that balance the 2+ charge on the cation in formula (I); a derivative of guanidine according to formula (II), wherein R8 is selected from a hydrogen, a saturated or unsaturated C1-C15 alkyl group, a C6-C15 aryl group, a C6-C15 aralkyl group and a C6-C15 alkaryl group; wherein R9, R10, R11 and R12 are each independently selected from a hydrogen, a saturated or unsaturated C1-C15 alkyl group, a C6-Type: ApplicationFiled: September 20, 2010Publication date: March 22, 2012Inventors: Zhendong Liu, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang