Abstract: A lead-free piezoelectric ceramic sensor material and a preparation method thereof and relates to the technical field of piezoelectric ceramic processing. The main raw materials of the lead-free piezoelectric ceramic sensor material disclosed in the present disclosure are a barium carbonate, a calcium carbonate, a zirconia, a titanium dioxide, a strontium carbonate, an erbium oxide, and a bismuth oxide. The preparation method is prepared through the steps of preparing ingredients, ball milling, granulating and tableting, debinding, and sintering, and the lead-free piezoelectric ceramic sensor material can be made into a lead-free piezoelectric sensor through applying an electrode and electrode polarizing. The present disclosure has an excellent compactness and a good chemical stability. And the piezoelectric sensor made of the lead-free piezoelectric ceramic sensor material has a high sensitivity, a strong working stability, an excellent piezoelectric and has a high Curie temperature.

Abstract: The present invention relates to a photoelectric film and a fabrication method thereof, and in particular, to a layered polycrystalline lead selenide (PbSe) film and a fabrication method thereof. The fabrication method mainly includes: (1) fabricating a dense PbSe layer on a substrate through chemical bath deposition (CBD); (2) fabricating a loose plumbonacrite (Pb10O(OH)6(CO3)6) layer on the dense PbSe layer through CBD; (3) placing a sample with the dense PbSe layer and the Pb10O(OH)6(CO3)6 layer in a selenium ion-containing solution to allow an ion exchange reaction to finally form the layered polycrystalline PbSe film. The fabrication method has the advantages of simple process, low cost, and high controllability.

Abstract: The present invention relates to a photoelectric film and a fabrication method thereof, and in particular, to a layered polycrystalline lead selenide (PbSe) film and a fabrication method thereof. The fabrication method mainly includes: (1) fabricating a dense PbSe layer on a substrate through chemical bath deposition (CBD); (2) fabricating a loose plumbonacrite (Pb10O(OH)6(CO3)6) layer on the dense PbSe layer through CBD; (3) placing a sample with the dense PbSe layer and the Pb10O(OH)6(CO3)6 layer in a selenium ion-containing solution to allow an ion exchange reaction to finally form the layered polycrystalline PbSe film. The fabrication method has the advantages of simple process, low cost, and high controllability.

Abstract: A lead-free piezoelectric ceramic sensor material and a preparation method thereof, and relates to the technical field of piezoelectric ceramic processing. The main raw materials of the lead-free piezoelectric ceramic sensor material disclosed in the present disclosure are a barium carbonate, a calcium carbonate, a zirconia, a titanium dioxide, a strontium carbonate, an oxidation bait, a bismuth oxide, a composite binder and a dispersant agent. The preparation method is prepared through the steps of preparing ingredients, ball milling, granulating and tableting, debinding, and sintering, and the lead-free piezoelectric ceramic sensor material can be made into a lead-free piezoelectric sensor through applying an electrode and electrode polarizing. The present disclosure has an excellent compactness and a good chemical stability.

Abstract: A pressure sensor ceramic material and a preparation method thereof, comprising: nano ceramic particles with a molecular formula CaCu3-xMxTi4-yScyO12, wherein: 0<x?1, 0.2?y?0.8, glass-phase nano-oxide particles with a molecular formula B2O3, AlN, BeO, polymethylformamide, polycrystalline diamond powder, microfiltration membrane polymer, and dimethylformamide The diamond powder coated with 10 ?m to 20 ?m of the sub-micron layer doped AlN and BeO prepared by the present disclosure can reduce the defect of uniform and isotropic crystal structure caused by gradient modification of CaCu3-xMxTi4-yScyO12 by B2O3 glass-phase nano-oxide, reduces the stress concentration of the resulting pressure sensor ceramic material against impact and avoids the defect that the cross-section bonding degree decreases due to the grain boundary movement.