Patents by Inventor Guanqie Gao

Guanqie Gao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System and method for direct etching
    Patent number: 7534711
    Abstract: System and method for direct etching. According to an embodiment, the present invention provides a method for manufacturing an integrated circuit device. The method includes a step for providing a substrate having a contact region, which is provided between a first word line and a second word line. The contact region has an overlying plug structure, which is provided within a thickness of a first dielectric layer. The first dielectric layer includes a portion overlying the plug structure. The first dielectric layer has a planarized surface region. The method also includes a step for forming a first line and a second line and a space provided between the first word line and the second world line. The space is provided within a region overlying the plug structure.
    Type: Grant
    Filed: December 23, 2006
    Date of Patent: May 19, 2009
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Jingang Wu, Fei Luo, Guanqie Gao, Cheng Yang
  • SYSTEM AND METHOD FOR DIRECT ETCHING
    Publication number: 20080146030
    Abstract: System and method for direct etching. According to an embodiment, the present invention provides a method for manufacturing an integrated circuit device. The method includes a step for providing a substrate having a contact region, which is provided between a first word line and a second word line. The contact region has an overlying plug structure, which is provided within a thickness of a first dielectric layer. The first dielectric layer includes a portion overlying the plug structure. The first dielectric layer has a planarized surface region. The method also includes a step for forming a first line and a second line and a space provided between the first word line and the second world line. The space is provided within a region overlying the plug structure.
    Type: Application
    Filed: December 23, 2006
    Publication date: June 19, 2008
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Jingang Wu, Fei Luo, Guanqie Gao, Cheng Yang