Patents by Inventor Guanyang HE

Guanyang HE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230333057
    Abstract: A magnetic gradiometer can be used in systems or methods for nondestructive testing, even when the material being tested is weakly magnetic. The magnetic gradiometer can include a printed circuit board (PCB) comprising a first end and a second end separated by a base length; an excitation coil encircling at least a portion of the PCB and configured to deliver an alternating current (AC) to generate an excitation magnetic field; and a differential sensor. The differential sensor can include a reference magnetic tunneling junction in magnetic vortex state (vortex MTJ) sensor array at the first end to generate a voltage based on the excitation magnetic field; and a signal vortex MTJ sensor array at the second end to generate another voltage based on the excitation magnetic field due to a composition of the measurement target. The second end of the PCB can be oriented towards the measurement target.
    Type: Application
    Filed: August 4, 2021
    Publication date: October 19, 2023
    Inventors: Gang Xiao, Guanyang He, Yiou Zhang, Xixiang Zhang
  • Patent number: 10983182
    Abstract: A magnetic tunneling junction sensor includes a free ferromagnetic layer of material, a pinned ferromagnetic layer of material, the free ferromagnetic layer and the pinned ferromagnetic layer separated by a thin insulating layer of material through which electrons can tunnel, an oxidized silicon wafer, the free ferromagnetic layer, thin insulating layer and the pinned ferromagnetic layer deposited on the oxidized silicon wafer, and extrinsic magnetic flux.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: April 20, 2021
    Assignee: Brown University
    Inventors: Gang Xiao, Guanyang He
  • Publication number: 20200049775
    Abstract: A magnetic tunneling junction sensor includes a free ferromagnetic layer of material, a pinned ferromagnetic layer of material, the free ferromagnetic layer and the pinned ferromagnetic layer separated by a thin insulating layer of material through which electrons can tunnel, an oxidized silicon wafer, the free ferromagnetic layer, thin insulating layer and the pinned ferromagnetic layer deposited on the oxidized silicon wafer, and extrinsic magnetic flux
    Type: Application
    Filed: August 9, 2019
    Publication date: February 13, 2020
    Inventors: Gang XIAO, Guanyang HE