Patents by Inventor Guan Yi Chen

Guan Yi Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240097051
    Abstract: A Schottky diode includes a substrate, a first drift region in the substrate, a second drift region in the substrate, a first dielectric layer disposed over the substrate, a first doped region in the first drift region, a second doped region in the second drift region, a third doped region in the first drift region, and a metal field plate disposed over the first dielectric layer. The first drift region and the first doped region include a first conductivity type. The second drift region, the second doped region and third doped region include a second conductivity type complementary to the first conductivity type. The first dielectric layer overlaps a portion of the first drift region and a portion of the second drift region. The second doped region is separated from the first doped region.
    Type: Application
    Filed: January 16, 2023
    Publication date: March 21, 2024
    Inventors: GUAN-YI LI, CHIA-CHENG HO, CHAN-YU HUNG, FEI-YUN CHEN
  • Publication number: 20240079493
    Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a gate structure disposed on the substrate. The semiconductor device also includes a source region and a drain region disposed within the substrate. The substrate includes a drift region laterally extending between the source region and the drain region. The semiconductor device further includes a first stressor layer disposed over the drift region of the substrate. The first stressor layer is configured to apply a first stress to the drift region of the substrate. In addition, the semiconductor device includes a second stressor layer disposed on the first stressor layer. The second stressor layer is configured to apply a second stress to the drift region of the substrate, and the first stress is opposite to the second stress.
    Type: Application
    Filed: September 1, 2022
    Publication date: March 7, 2024
    Inventors: GUAN-QI CHEN, CHEN CHI HSIAO, KUN-TSANG CHUANG, FANG YI LIAO, YU SHAN HUNG, CHUN-CHIA CHEN, YU-SHAN HUANG, TUNG-I LIN
  • Patent number: 9853352
    Abstract: A signal enhancement device includes a back cover and an antenna module. The back cover includes a backboard for covering a rear surface of a main body and a top board for covering a top of the main body. The antenna module includes a base portion of board shape for being fixed on a portion of an inside surface of the backboard adjacent to the top board, a first bending portion for being fixed on an inside surface of the top board, a second bending portion for being fixed on a front end surface of the top board, and a third bending portion for being fixed on an outside surface of the top board and a portion of an outside surface of the backboard adjacent to the top board. When the signal enhancement device is mounted on the main body, the antenna module is capable of coupling with a communication antenna of the main body so as to enhance signal quality of the communication antenna.
    Type: Grant
    Filed: August 9, 2016
    Date of Patent: December 26, 2017
    Assignee: Cheng Uei Precision Industry Co., Ltd.
    Inventors: Guan Yi Chen, Wen Bing Hsu, Kuo Wei Chang
  • Patent number: D797082
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: September 12, 2017
    Assignee: Cheng Uei Precision Industry Co., Ltd.
    Inventors: Guan Yi Chen, Wen Bing Hsu, Kuo Wei Chang