Patents by Inventor Guanzhou LIU

Guanzhou LIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11876154
    Abstract: A light-emitting diode (LED) device includes a first epitaxial layered structure having an upper surface having different first and second regions, a second epitaxial layered structure spaced-apart disposed on the first epitaxial layered structure, a light conversion layer formed on the first region, a bonding unit disposed on the light conversion layer, the bonding unit and the light conversion layer interconnecting the first and second epitaxial layered structures, and an electrically conductive structure formed on the second region and electrically connects the first and second epitaxial layered structures. A method for manufacturing the LED device is also disclosed.
    Type: Grant
    Filed: February 20, 2020
    Date of Patent: January 16, 2024
    Assignee: Xiamen San'An Optoelectronics Co., Ltd.
    Inventors: Mingyang Li, Guanzhou Liu, Jingfeng Bi, Senlin Li, Minghui Song, Wenjun Chen
  • Publication number: 20210013354
    Abstract: A solar cell includes a cell chip unit, and an optical unit. The optical unit includes a first optical layer, a second optical layer and a third optical layer that are sequentially disposed on the cell chip unit in such order. Each of the first optical layer and the third optical layer has a refractive index greater than that of the second optical layer.
    Type: Application
    Filed: September 29, 2020
    Publication date: January 14, 2021
    Inventors: Guanzhou LIU, Mingyang LI, Senlin LI, Minghui SONG, Jingfeng BI, Wenjun CHEN
  • Publication number: 20200194634
    Abstract: A light-emitting diode (LED) device includes a first epitaxial layered structure having an upper surface having different first and second regions, a second epitaxial layered structure spaced-apart disposed on the first epitaxial layered structure, a light conversion layer formed on the first region, a bonding unit disposed on the light conversion layer, the bonding unit and the light conversion layer interconnecting the first and second epitaxial layered structures, and an electrically conductive structure formed on the second region and electrically connects the first and second epitaxial layered structures. A method for manufacturing the LED device is also disclosed.
    Type: Application
    Filed: February 20, 2020
    Publication date: June 18, 2020
    Inventors: Mingyang LI, Guanzhou LIU, Jingfeng BI, Senlin LI, Minghui SONG, Wenjun CHEN
  • Publication number: 20170338361
    Abstract: A flip-chip multi junction solar cell chip integrated with a bypass diode includes from up to bottom: a glass cover; a transparent bonding layer; a front electrode; an n/p photoelectric conversion layer; a p/n tunnel junction; a structure layer of the n/p bypass diode; a first backside electrode; a second backside electrode. The solar cell chip also includes at least a through hole extending through the n/p photoelectric conversion layer, the p/n tunnel junction and the structure layer of the n/p bypass diode. An ultra-thin substrate-less cell can therefore be provided without occupying effective light receiving areas, greatly improving cell heat dissipation. With a light weight, the chip can also have advantages in space power application.
    Type: Application
    Filed: August 5, 2017
    Publication date: November 23, 2017
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Weiping XIONG, Jingfeng BI, Wenjun CHEN, Guanzhou LIU, Meijia YANG, Mingyang LI, Chaoyu WU, Duxiang WANG
  • Publication number: 20170069782
    Abstract: A method of fabricating a four-junction solar cell includes: forming a first epitaxial structure comprising first and second subcells and a cover layer over a first substrate through a forward epitaxial growth, and forming a second epitaxial structure comprising third and fourth subcells over the second substrate; forming a groove and a metal bonding layer; forming a groove on the cover layer surface of the first epitaxial structure and the substrate back surface of the second epitaxial structure, and depositing a metal bonding layer in the groove; and bonding the first epitaxial structure and the second epitaxial structure; bonding the cover layer surface of the first epitaxial structure and the substrate back surface of the second epitaxial structure, ensuring that the metal bonding layers are aligned to each other to realize dual bonding between the metal bonding layers and between the semiconductors through high temperature and high pressure treatment.
    Type: Application
    Filed: November 21, 2016
    Publication date: March 9, 2017
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Minghui SONG, Guijiang LIN, Wenjun CHEN, Jingfeng BI, Guanzhou LIU, Meijia YANG, Mingyang LI