Patents by Inventor Gudrun Diepold

Gudrun Diepold has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a component having an electrical contact region
    Patent number: 7435605
    Abstract: A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.
    Type: Grant
    Filed: July 9, 2007
    Date of Patent: October 14, 2008
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Stefan Illek, Peter Stauss, Andreas Ploessl, Gudrun Diepold, Ines Pietzonka, Wilhelm Stein, Ralph Wirth, Walter Wegleiter
  • Method for fabricating a component having an electrical contact region
    Publication number: 20070264740
    Abstract: A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.
    Type: Application
    Filed: July 9, 2007
    Publication date: November 15, 2007
    Inventors: Stefan Illek, Peter Stauss, Andreas Ploessl, Gudrun Diepold, Ines Pietzonka, Wilhelm Stein, Ralph Wirth, Walter Wegleiter
  • Method for fabricating a component having an electrical contact region, and component having an electrical contact region
    Patent number: 7242034
    Abstract: A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.
    Type: Grant
    Filed: February 2, 2004
    Date of Patent: July 10, 2007
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Stefan Illek, Peter Stauss, Andreas Ploessl, Gudrun Diepold, Ines Pietzonka, Wilhelm Stein, Ralph Wirth, Walter Wegleiter
  • Method for fabricating a component having an electrical contact region, and component having an electrical contact region
    Publication number: 20050090031
    Abstract: A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.
    Type: Application
    Filed: February 2, 2004
    Publication date: April 28, 2005
    Applicant: Osram Opto Semiconductors GmbH
    Inventors: Stefan Illek, Peter Stauss, Andreas Ploessl, Gudrun Diepold, Ines Pietzonka, Wilhelm Stein, Ralph Wirth, Walter Wegleiter