Abstract: A semiconductor device includes a silicon carbide layer, a metal carbide layer arranged over the silicon carbide layer, and a solder layer arranged over and in contact with the metal carbide layer.

Abstract: A method of processing silicon carbide containing crystalline substrate is provided. The method includes pyrolyzing a surface of the silicon carbide containing crystalline substrate to produce a silicon and carbon containing debris layer over the silicon carbide containing crystalline substrate, and removing the silicon and carbon containing debris layer, wherein the pyrolyzing and the removing is repeated at least once.

Abstract: A semiconductor device includes a silicon layer, a metal silicide layer arranged directly on the silicon layer, and a solder layer arranged directly on the metal silicide layer.

Abstract: An integrated circuit substrate and a method for manufacturing the same are disclosed. In an embodiment a method includes providing a wafer having a plurality of active areas, each active area being provided in a separate die area and for each active area, providing a code pattern outside the active area, the code pattern being associated with the die area.

Abstract: A semiconductor device includes a silicon layer, a metal silicide layer arranged directly on the silicon layer, and a solder layer arranged directly on the metal silicide layer.

Abstract: A method of processing silicon carbide containing crystalline substrate is provided. The method includes pyrolyzing a surface of the silicon carbide containing crystalline substrate to produce a silicon and carbon containing debris layer over the silicon carbide containing crystalline substrate, and removing the silicon and carbon containing debris layer, wherein the pyrolyzing and the removing is repeated at least once.

Abstract: A semiconductor device includes a silicon carbide layer, a metal carbide layer arranged over the silicon carbide layer, and a solder layer arranged over and in contact with the metal carbide layer.

Abstract: Methods for processing a semiconductor workpiece can include providing a semiconductor workpiece that includes one or more kerf regions; forming one or more trenches in the workpiece by removing material from the one or more kerf regions from a first side of the workpiece; mounting the workpiece with the first side to a carrier; thinning the workpiece from a second side of the workpiece; and forming a metallization layer over the second side of the workpiece.

Abstract: An integrated circuit substrate and a method for manufacturing the same are disclosed. In an embodiment a method includes providing a wafer having a plurality of active areas, each active area being provided in a separate die area and for each active area, providing a code pattern outside the active area, the code pattern being associated with the die area.

Abstract: A method of forming a semiconductor device includes forming an active region in a first side of a silicon carbide substrate, the silicon carbide substrate having a second side opposite the first side and forming a contact pad at the first side. The contact pad is coupled to the active region. The method further includes forming an etch stop layer over the contact pad and plasma dicing the silicon carbide substrate from the second side. The plasma dicing etches through the silicon carbide substrate and stops on the etch stop layer. The diced silicon carbide substrate is held together by the etch stop layer. The diced silicon carbide substrate is attached on a carrier. The diced silicon carbide substrate is separated into silicon carbide dies by cleaving the etch stop layer.

Abstract: The description discloses a method for use in manufacturing integrated circuit chips. The method comprises providing a wafer having a plurality of integrated circuits each provided in an separate active areas, and, for each active area, outside the active area, providing a code pattern that is associated with the integrated circuit. A computer-readable medium is also disclosed. Further, a manufacturing apparatus configured to receive a wafer and to remove material from the wafer so as to provide a scribe line to the wafer formed as a trench for use in separation of the wafer into dies is also disclosed. The description also discloses a wafer, an integrated circuit chip die substrate originating from a wafer of origin and carrying an integrated circuit, and an integrated circuit chip.

Abstract: A hole plate and a MEMS microphone arrangement are disclosed. In an embodiment a hole plate includes a substrate with a first main surface, a second main surface, and a lateral surface and a perforation structure formed within the substrate, the perforation structure having a plurality of through-holes through the substrate, wherein the through-holes and the lateral surface are a result of a simultaneous dry etching step.

Abstract: An arrangement is provided. The arrangement may include: a substrate having a front side and a back side, a die region within the substrate, a multi-purpose layer defining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. The multi-purpose layer may be formed of an ohmic material, and the etch stop layer may be of a first conductivity type of a first doping concentration.

Abstract: A method of forming a semiconductor device includes forming an active region in a first side of a silicon carbide substrate, the silicon carbide substrate having a second side opposite the first side and forming a contact pad at the first side. The contact pad is coupled to the active region. The method further includes forming an etch stop layer over the contact pad and plasma dicing the silicon carbide substrate from the second side. The plasma dicing etches through the silicon carbide substrate and stops on the etch stop layer. The diced silicon carbide substrate is held together by the etch stop layer. The diced silicon carbide substrate is attached on a carrier. The diced silicon carbide substrate is separated into silicon carbide dies by cleaving the etch stop layer.

Abstract: In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.

Abstract: A method of dicing a wafer includes providing a wafer and etching the wafer to singulate die between kerf line segments defined within an interior region of the wafer and to singulate a plurality of wafer edge areas between the kerf line segments and a circumferential edge of the wafer. Each one of the plurality of wafer edge areas is singulated by kerf lines that each extend between one of two endpoints of one of the kerf line segments and the circumferential edge of the wafer.

Abstract: In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.

Abstract: A hole plate and a MEMS microphone arrangement are disclosed. In an embodiment a hole plate includes a substrate with a first main surface, a second main surface, and a lateral surface and a perforation structure formed within the substrate, the perforation structure having a plurality of through-holes through the substrate, wherein the through-holes and the lateral surface are a result of a simultaneous dry etching step.

Abstract: According to various embodiments, a method for processing a semiconductor substrate may include: covering a plurality of die regions of the semiconductor substrate with a metal; forming a plurality of dies from the semiconductor substrate, wherein each die of the plurality of dies is covered with the metal; and, subsequently, annealing the metal covering at least one die of the plurality of dies.

Abstract: A method for structuring a substrate and a structured substrate are disclosed. In an embodiment a method includes providing a substrate with a first main surface and a second main surface, wherein the substrate is fixed to a carrier arrangement at the second main surface, performing a photolithography step at the first main surface of the substrate to mark a plurality of sites at the first main surface, the plurality of sites corresponding to future perforation structures and future kerf regions for a plurality of future individual semiconductor chips to be obtained from the substrate, and plasma etching the substrate at the plurality of sites until the carrier arrangement is reached, thus creating the perforation structures within the plurality of individual semiconductor chips and simultaneously separating the individual semiconductor chips along the kerf regions.