Patents by Inventor Guei-Bing Hong

Guei-Bing Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing thin film transistor array
    Patent number: 9048290
    Abstract: A thin film transistor (TFT) array includes a substrate, a thin film transistor, a first wall, a transparent electrode and a color resist. The thin film transistor is disposed on the substrate. The first wall is disposed on the substrate and separates a first contact hole from a pixel region on the substrate, wherein the first contact hole exposes a drain electrode of the thin film transistor. The first wall has a first sidewall facing towards the first contact hole and a second sidewall facing towards the pixel region, wherein the slope of the first sidewall is gentler than the slope of the second sidewall. The transparent electrode is electrically connected to the drain electrode of the thin film transistor through the first contact hole. The pixel region is filled with the color resist.
    Type: Grant
    Filed: August 4, 2014
    Date of Patent: June 2, 2015
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Yen-Heng Huang, Hui-Fen Lin, Chung-Kai Chen, Chia-Hui Pai, Guei-Bing Hong
  • METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY
    Publication number: 20140342554
    Abstract: A thin film transistor (TFT) array includes a substrate, a thin film transistor, a first wall, a transparent electrode and a color resist. The thin film transistor is disposed on the substrate. The first wall is disposed on the substrate and separates a first contact hole from a pixel region on the substrate, wherein the first contact hole exposes a drain electrode of the thin film transistor. The first wall has a first sidewall facing towards the first contact hole and a second sidewall facing towards the pixel region, wherein the slope of the first sidewall is gentler than the slope of the second sidewall. The transparent electrode is electrically connected to the drain electrode of the thin film transistor through the first contact hole. The pixel region is filled with the color resist.
    Type: Application
    Filed: August 4, 2014
    Publication date: November 20, 2014
    Inventors: Yen-Heng Huang, Hui-Fen Lin, Chung-Kai Chen, Chia-Hui Pai, Guei-Bing Hong
  • Thin film transistor array and method for manufacturing the same
    Patent number: 8860026
    Abstract: A thin film transistor (TFT) array includes a substrate, a thin film transistor, a first wall, a transparent electrode and a color resist. The thin film transistor is disposed on the substrate. The first wall is disposed on the substrate and separates a first contact hole from a pixel region on the substrate, wherein the first contact hole exposes a drain electrode of the thin film transistor. The first wall has a first sidewall facing towards the first contact hole and a second sidewall facing towards the pixel region, wherein the slope of the first sidewall is gentler than the slope of the second sidewall. The transparent electrode is electrically connected to the drain electrode of the thin film transistor through the first contact hole. The pixel region is filled with the color resist.
    Type: Grant
    Filed: December 28, 2009
    Date of Patent: October 14, 2014
    Assignee: AU Optronics Corporation
    Inventors: Yen-Heng Huang, Hui-Fen Lin, Chung-Kai Chen, Chia-Hui Pai, Guei-Bing Hong
  • Thin Film Transistor Array and Method for Manufacturing the Same
    Publication number: 20110001138
    Abstract: A thin film transistor (TFT) array includes a substrate, a thin film transistor, a first wall, a transparent electrode and a color resist. The thin film transistor is disposed on the substrate. The first wall is disposed on the substrate and separates a first contact hole from a pixel region on the substrate, wherein the first contact hole exposes a drain electrode of the thin film transistor. The first wall has a first sidewall facing towards the first contact hole and a second sidewall facing towards the pixel region, wherein the slope of the first sidewall is gentler than the slope of the second sidewall. The transparent electrode is electrically connected to the drain electrode of the thin film transistor through the first contact hole. The pixel region is filled with the color resist.
    Type: Application
    Filed: December 28, 2009
    Publication date: January 6, 2011
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Yen-Heng Huang, Hui-Fen Lin, Chung-Kai Chen, Chia-Hui Pai, Guei-Bing Hong