Abstract: A method for processing a wide band gap semiconductor wafer includes: depositing a support layer including semiconductor material at a back side of a wide band gap semiconductor wafer, the wide band gap semiconductor wafer having a band gap larger than the band gap of silicon; depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer; and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer comprising at least a part of the epitaxial layer, and a remaining wafer comprising the support layer.

Abstract: A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; a trench formed in a first main surface of the semiconductor substrate; a field plate electrode in the trench and reaching a same level as the first main surface of the semiconductor substrate; an insulating material that separates the field plate electrode from the semiconductor substrate; and a material embedded in the field plate electrode. The field plate electrode is made of a different material than the material embedded in the field plate electrode. The trench adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. Additional device embodiments and methods of producing the semiconductor device are also described.

Abstract: A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; an electrode structure on or in the semiconductor substrate, the electrode structure including an electrode and an insulating material that separates the electrode from the semiconductor substrate; and a strain-inducing material embedded in the electrode. The electrode structure adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. The electrode is under either tensile or compressive stress in the first direction. The strain-inducing material either enhances or at least partly counteracts the stress of the electrode in the first direction. Methods of producing the semiconductor device are also described.

Abstract: A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; an electrode structure on or in the semiconductor substrate, the electrode structure including an electrode and an insulating material that separates the electrode from the semiconductor substrate; and a strain-inducing material embedded in the electrode. The electrode structure adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. The electrode is under either tensile or compressive stress in the first direction. The strain-inducing material either enhances or at least partly counteracts the stress of the electrode in the first direction. Methods of producing the semiconductor device are also described.

Abstract: A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.

Abstract: An auxiliary carrier and a silicon carbide substrate are provided. The silicon carbide substrate includes an idle layer and a device layer between a main surface at a front side of the silicon carbide substrate and the idle layer. The device layer includes a plurality of laterally separated device regions. Each device region extends from the main surface to the idle layer. The auxiliary carrier is structurally connected with the silicon carbide substrate at the front side. The idle layer is removed. A mold structure is formed that fills a grid-shaped groove that laterally separates the device regions. The device regions are separated, and parts of the mold structure form frame structures laterally surrounding the device regions.

Abstract: A method for processing a wide band gap semiconductor wafer includes: depositing a support layer including semiconductor material at a back side of a wide band gap semiconductor wafer, the wide band gap semiconductor wafer having a band gap larger than the band gap of silicon; depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer; and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer comprising at least a part of the epitaxial layer, and a remaining wafer comprising the support layer.

Abstract: A method for processing a wide band gap semiconductor wafer is proposed. The method includes depositing a non-monocrystalline support layer at a back side of a wide band gap semiconductor wafer, depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer, and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer including at least a part of the epitaxial layer, and a remaining wafer including the non-monocrystalline support layer.

Abstract: A method for processing a silicon carbide wafer includes implanting ions into the silicon carbide wafer to form an absorption layer in the silicon carbide wafer. The absorption coefficient of the absorption layer is at least 100 times the absorption coefficient of silicon carbide material of the silicon carbide wafer outside the absorption layer, for light of a target wavelength. The silicon carbide wafer is split along the absorption layer at least by irradiating the silicon carbide wafer with light of the target wavelength to obtain a silicon carbide device wafer and a remaining silicon carbide wafer.

Abstract: A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.

Abstract: An auxiliary carrier and a silicon carbide substrate are provided. The silicon carbide substrate includes an idle layer and a device layer between a main surface at a front side of the silicon carbide substrate and the idle layer. The device layer includes a plurality of laterally separated device regions. Each device region extends from the main surface to the idle layer. The auxiliary carrier is structurally connected with the silicon carbide substrate at the front side. The idle layer is removed. A mold structure is formed that fills a grid-shaped groove that laterally separates the device regions. The device regions are separated, and parts of the mold structure form frame structures laterally surrounding the device regions.

Abstract: A method for processing a silicon carbide wafer includes implanting ions into the silicon carbide wafer to form an absorption layer in the silicon carbide wafer. The absorption coefficient of the absorption layer is at least 100 times the absorption coefficient of silicon carbide material of the silicon carbide wafer outside the absorption layer, for light of a target wavelength. The silicon carbide wafer is split along the absorption layer at least by irradiating the silicon carbide wafer with light of the target wavelength to obtain a silicon carbide device wafer and a remaining silicon carbide wafer.

Abstract: A method for processing a wide band gap semiconductor wafer is proposed. The method includes depositing a non-monocrystalline support layer at a back side of a wide band gap semiconductor wafer, depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer, and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer including at least a part of the epitaxial layer, and a remaining wafer including the non-monocrystalline support layer.

Abstract: A micromechanical structure comprises a substrate and a functional structure arranged at the substrate. The functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure comprises a carbon layer arrangement, wherein a basis material of the carbon layer arrangement is a carbon material.

Abstract: A micromechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region. The functional structure includes a conductive base layer and a functional structure comprising a stiffening structure having a stiffening structure material arranged at the conductive base layer and only partially covering the conductive base layer at the functional region. The stiffening structure material includes a silicon material and at least a carbon material.

Abstract: A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.

Abstract: In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.

Abstract: Various embodiments provide a mold including a pyrolytic carbon film disposed at a surface of the mold. Various embodiments relate to using a low pressure chemical vapor deposition process (LPCVD) or using a physical vapor deposition (PVD) process in order to form a pyrolytic carbon film at a surface of a mold.

Abstract: In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.

Abstract: A substrate carrier system for carrying substrates to a vertical oven and a vertical oven are disclosed. In an embodiment, the system includes a substrate carrier configured to carry a plurality of substrates and a substrate carrier support structure configured to be inserted along an insertion direction into the vertical oven, and to receive the substrate carrier in a direction substantially orthogonal to the insertion direction into a holding position in the substrate carrier support structure.