Abstract: The present invention relates to a novel process for the preparation of compact, spherical mixed oxide powders having an average particle size of <10 ?m by spray pyrolysis, and to the use thereof as phosphor, as base material for phosphors or as starting material for ceramic production or for the preparation of high-density, high-strength and optionally transparent bulk material by means of hot-pressing technology.

Abstract: The present invention relates to a novel process for the production of spherical binary and multinary mixed oxide powders in a hot-wall reactor. Through the use of aqueous or organic salt solutions or suspensions having a limited salt or solid concentration in combination with additives in the form of surfactants and/or of inorganic salts which have an exothermic decomposition reaction, a compact spherical particle morphology can be obtained, where the average particle size is in the range from 5 nm to <10 ?m.

Abstract: The invention relates to a method for producing a one-part, multinary metal oxide power which is suitable for producing high-temperature superconductors. To this end, a mixture of the corresponding metal salts and/or metal oxides and/or metals in the requisite stoichiometric ratio is introduced into a pulsed reactor with a pulsed gas flow resulting from flameless combustion and is partially or completely converted into the multinary metal oxide.

Abstract: The invention relates to cast parts which contain at least 87 wt. % silicon nitride and up to 13 wt. % of an additive combination comprised of Al2O3 and Y2O3. The initial composition of the mass formulation starts with Y2O3/Al2O3 ratios of less than 1.1, preferably with Y2O3 Al2O3 ratios of 0.2 to 1.09. 1% to 20% of the Y2O3 portion can thus be substituted by an additional element of the group IVb of the periodic table or by the oxide thereof. The cast parts can comprise up to 1.0 wt. % HfO2 and/or ZrO2. Said cast parts preferably have a thickness >98% of the theoretic thickness. At room temperature, the bending strength of the inventive cast parts amounts to ?1100 MPa and amounts to ?850 MPa at 1000° C. The inventive cast parts correspond to the formula Si6-zAlzOzN8-z. The degree of substitution z thus amounts to 0.20 to 0.60, preferably from 0.22 to 0.54, especially from 0.3 to 0.35.

Abstract: The invention relates to cast parts which contain at least 87 wt. % silicon nitride and up to 13 wt. % of an additive combination comprised of Al2O3 and Y2O3. The initial composition of the mass formulation starts with Y2O3/Al2O3 ratios of less than 1.1, preferably with Y2O3 Al2O3 ratios of 0.2 to 1.09. 1% to 20% of the Y2O3 portion can thus be substituted by an additional element group of IVb of the periodic table or by the oxide thereof. The cast parts can comprise up to 1.0 wt. % HfO2 and/or ZrO2. Said cast parts preferably have a thickness >98% of the theoretic thickness. At room temperature, the bending strength of the inventive cast parts amounts to ≧1100 MPa and amounts to ≧850 MPa at 1000° C. The inventive cast parts correspond to the formula Si6-zAlzOzN8-z. The degree of substitution z thus amounts to 0.20 to 0.60, preferably from 0.22 to 0.54, especially from 0.3 to 0.35.

Abstract: The invention relates to cast parts which contain at least 87 wt. % silicon nitride and up to 13 wt. % of an additive combination comprised of Al2O3 and Y2O3. The initial composition of the mass formulation starts with Y2O3/Al2O3 ratios of less than 1.1, preferably with Y2O3 Al2O3 ratios of 0.2 to 1.09. 1% to 20% of the Y2O3 portion can thus be substituted by an additional element of the group IVb of the periodic table or by the oxide thereof. The cast parts can comprise up to 1.0 wt. % HfO2 and/or ZrO2. Said cast parts preferably have a thickness >98% of the theoretic thickness. At room temperature, the bending strength of the inventive cast parts amounts to ≧1100 MPa and amounts to ≧850 MPa at 1000° C. The inventive cast parts correspond to the formula Si6−zAlzOzN8−z. The degree of substitution z thus amounts to 0.20 to 0.60, preferably from 0.22 to 0.54, especially from 0.3 to 0.35.