Abstract: A method for aligning a cutter plate in a pelletizer for polymer pellets using a remote alignment adjustment device having a mechanical distance measurement probe and a camera for taking photos or videos. The remote alignment adjustment device is attached to the drive shaft of the cutter plate and rotates with the shaft to correct the alignment in different positions of the die plate. Additionally, a process for preparing polyethylene pellets in a pelletizer using the method for aligning the cutter plate.

Abstract: A method for aligning a cutter plate in a pelletizer for polymer pellets using a remote alignment adjustment device having a mechanical distance measurement probe and a camera for taking photos or videos. The remote alignment adjustment device is attached to the drive shaft of the cutter plate and rotates with the shaft to correct the alignment in different positions of the die plate. Additionally, a process for preparing polyethylene pellets in a pelletizer using the method for aligning the cutter plate.

Abstract: A layered semiconductor substrate has a monocrystalline first layer based on silicon, having a first thickness and a first lattice constant a1 determined by a first dopant element and a first dopant concentration, and in direct contact therewith, a monocrystalline second layer based on silicon, having a second thickness and a second lattice constant a2, determined by a second dopant element and a second dopant concentration, and a monocrystalline third layer comprising a group III nitride, the second layer located between the first layer and the third layer, wherein a2>a1, wherein the crystal lattice of the first layer and the second layer are lattice-matched, and wherein the bow of the layered semiconductor substrate is in the range from ?50 ?m to 50 ?m.

Abstract: An alternating current circuit breaker has a series circuit of bipolar switching modules which are inserted in series into a phase line of an alternating current line. Each switching module has an energy storage device and actuatable power semiconductors that can be activated and deactivated. Each switching module can be driven such that a switching module voltage that corresponds to a positive or negative energy storage device voltage or a zero voltage can be generated at the poles of the switching module. A controller is configured to actuate the switching modules based on a polarity change of a phase current such that the switching module voltage switches polarity, wherein a switching module voltage opposite the phase voltage can be generated. A method for switching alternating currents is effected with the alternating current circuit breaker.

Abstract: A valve-type arrester includes a heat sink for dissipating heat from the interior of the valve-type arrester into the surroundings of the valve-type arrester. The heat sink has a circular-cylindrical main body with a base surface, a top surface parallel to the base surface and a casing surface connecting the base surface and the top surface. The heat sink additionally has a plurality of fins disposed on the main body, in which each fin is formed in the shape of a sheet or a leaf and disposed on the casing surface of the main body.

Abstract: A module for a converter includes submodules, a first coupling inductor and a second coupling inductor which is activatable in the event of a fault. A method for controlling fault currents in a converter is also provided.

Abstract: A valve-type arrester includes a heat sink for dissipating heat from the interior of the valve-type arrester into the surroundings of the valve-type arrester. The heat sink has a circular-cylindrical main body with a base surface, a top surface parallel to the base surface and a casing surface connecting the base surface and the top surface. The heat sink additionally has a plurality of fins disposed on the main body, in which each fin is formed in the shape of a sheet or a leaf and disposed on the casing surface of the main body.

Abstract: A layered semiconductor substrate has a monocrystalline first layer based on silicon, having a first thickness and a first lattice constant a1 determined by a first dopant element and a first dopant concentration, and in direct contact therewith, a monocrystalline second layer based on silicon, having a second thickness and a second lattice constant a2, determined by a second dopant element and a second dopant concentration, and a monocrystalline third layer comprising a group III nitride, the second layer located between the first layer and the third layer, wherein a2>a1, wherein the crystal lattice of the first layer and the second layer are lattice-matched, and wherein the bow of the layered semiconductor substrate is in the range from ?50 ?m to 50 ?m.

Abstract: A device for moving film from a supply magazine to a cassette loading station, the film removing device being in a unit with a film holding channel formed by parallel groups of rollers which engage opposed edges of the film.