Abstract: A semiconductor device includes a semiconductor section formed from an organic semiconductor material, a first contact for injecting charge carriers into the semiconductor section and a second contact for extracting charge carriers from the semiconductor section, wherein a layer of a nitrile or of an isonitrile is arranged between the first contact and the semiconductor section and/or between the second contact and the semiconductor section. The nitrile or isonitrile acts as a charge transfer molecule facilitating the transfer of charge carriers between contact and organic semiconductor material. This allows the contact resistance between contact and organic semiconductor material to be significantly reduced.

Abstract: An ohmic resistance is present between two parts of a conductor layer so that the size of the ohmic resistance can be ascertained and/or a semiconductor region is present in or on a layer forming the dielectric. The conductor layer is structured into a gate contact, a source contact, and a drain contact so that a transistor function or switching function is possible in the semiconductor region. Such a configuration allows an attempt to analyze the circuit integrated in the chip to be detected.

Abstract: A semiconductor circuit configuration has at least one pair of complementary operating field-effect transistors in which each transistor has a gate region, first and second source/drain regions and also a channel region with or made of an organic semiconductor material that is provided in between. It is furthermore provided that the gate regions are formed such that they are electrically coupled to one another via a capacitor configuration.

Abstract: The invention relates to a compound comprising at least one memory unit consisting of an organic memory material, especially for use in CMOS structures, said compound being characterized by a) at least one first anchor group (1) provided with a reactive group for covalently bonding to a first electrode (10), especially a bottom electrode of a memory cell (102), and b) at least one second anchor group (2) provided with a reactive group for bonding to a second electrode (20), especially a top electrode of a memory cell (102). The invention also relates to a semiconductor component, and to a method for producing a semiconductor component. The invention thus provides a compound, a semiconductor component, and a method for producing the semiconductor component, by which means molecular memory layers can be efficiently formed on conventional substrates.

Abstract: Embodiments of the invention relate to an integrated circuit comprising an organic semiconductor, particularly an organic field effect transistor (OFET) that is provided with a dielectric layer. The integrated circuit is produced by means of a polymer formulation consisting of a) 100 parts of at least one crosslinkable basic polymer, b) 10 to 20 parts of at least one electrophilic crosslinking component, c) 1 to 10 parts of at least one thermal acid catalyst that generates an activating proton at temperatures ranging from 100 to 150° C., dissolved in d) at least one solvent. Other embodiments of the invention further relate to a method for producing an integrated circuit, which makes it possible to produce integrated circuits comprising dielectric layers, especially for OFET's at low temperatures.

Abstract: Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed aromatic molecular group. The molecular group is capable of ?-? interactions, which stabilize the monolayer. In an embodiment, the semiconductor component is an organic field effect transistor (OFET). In an embodiment of the invention, a method includes forming the monolayer using a liquid phase immersion process.

Abstract: An embodiment of the invention provides a method for the treatment of a substrate made of paper or a substrate containing paper as support material for a semiconductor component. In an embodiment, the substrate surface is contacted with a solution comprising at least one phenol-containing base polymer and/or copolymer and a crosslinker component. A polymer formulation deposits from the solution onto the surface. The solution may further include an acid catalyst. Embodiments include a semiconductor component formed according to the method of the invention.

Abstract: A synthesis method of a compound used to form a self-assembled monolayer used in a semiconductor component is provided. A method includes a first step of replacing a terminal halogen of an ?-haloalk-1-ene with a compound having at least one aromatic group, and a second step of hydrosilylating the reaction product of the first step. Reaction products of the first step include octadec-17-enyloxybenzene, 4-octadec-17?-enyloxy-1,1?-biphenyl, 2-heptadec-16?-enylthiophene, and 2-octadec-17?-enylthiophene. Monolayers provided include 18-phenoxyoctadecyl)trichlorosilane, [18-(1?,1?-biphenyl-4?-yloxy)octadecyl]trichlorosilane, (17-thien-2?-ylheptadecyl)trichlorosilane, (18-thien-2?-yloctadecyl)trichlorosilane, and 4-(18?-trichlorosilyloctadecyloxy)benzonitrile. An organic field effect transistor having monolayers according to embodiments of the invention is provided.

Abstract: An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.

Abstract: A method for selectively doping an organic semiconductor 1material in the region of a contact area .1formed between a contact and the organic semiconductor material disposed thereon includes introducing the dopant with the aid of nanoparticles, the nanoparticles being disposed in a manner adjoining the contact area and, as a result, only a very narrow region of the organic semiconductor material being doped. The field increase effected by the nanoparticles results in a further reduction of the contact resistance.

Abstract: The invention relates to a semiconductor device having a semiconductor path made from an organic semiconductor material. Semiconductor particles or semiconductor clusters are distributed randomly in the organic semiconductor material. The semiconductor particles and/or semiconductor clusters can also be linked by linker molecules. The addition of semiconductor particles to the organic semiconductor material makes it possible to improve the electrical properties, for example, of a field-effect transistor has a semiconductor path of this nature.

Abstract: An embodiment of the invention provides a semiconductor component and method of forming thereof. The component comprises a dielectric layer over a substrate, and a layer of an organic compound covalently bonded to the dielectric layer. The organic compound has a chemical functionality selected from the group consisting essentially of a silicon-halogen, a silicon-alkoxy group, an amino group, an amide group, a reactive carboxylic acid derivative, a chloride ester, or an ortho ester. The organic compound may further include a polar chemical functionality that induces a dipole moment in the organic compound. The organic compound may be arranged as a monolayer on the dielectric layer. An organic semiconducting layer is formed on the layer of the organic compound.

Abstract: The semiconductor memory cell is characterized in that at least one modulation region is provided between a first gate electrode of the gate electrode configuration and the insulation region, and in that the modulation region has or is formed from a material or modulation material having electrical and/or further material properties that can be modulated in a controllable manner between at least two states in such a way that, in accordance with these states of the modulation material or of the modulation region, the channel region can be influenced electromagnetically, in particular for a given electrical potential difference between the first gate electrode and the source/drain regions.

Abstract: The present invention provides a process for wiring electrical contact sites, in particular on the surface of an electronic or microelectronic component, with the following steps: applying and patterning at least one dielectric on the component surface; currentlessly depositing a conductor starting layer for producing metal wiring interconnects and substitute contact sites with short-circuit contacts for interconnecting the individual metal wiring interconnects and the corresponding electrical contact sites; reinforcing the conductor starting layer by a common electrodepositing process; and separating the short-circuit contacts for separating the electrical contact sites or the contact sites of the wiring from one another.

Abstract: The present invention provides a method for the patterned metallization of a surface of a substrate, comprising the steps of preheating the substrate to a temperature which is below a deposition temperature of a predetermined metal dissolved in a fluid provided above the surface, and performing patterned deposition of the predetermined metal in predetermined regions on the surface of the substrate by locally increasing the temperature to above the deposition temperature.

Abstract: The circuit element has a first layer composed of an electrically insulating substrate material and a first electrically conductive material which is in the form of at least one discrete area such that it is embedded in the substrate material and/or is applied to the substrate material. Furthermore, it has a second layer having a second electrically conductive material, and a monomolecular layer composed of redox-active bispyridinium molecules, which is arranged between the first layer and the second layer. The bispyridinium molecules are immobilized on the electrically conductive material which is in the form of at least one discrete area, and make electrical contact with the second electrical material of the second layer. Furthermore, electrically inert molecules are immobilized on the first layer, which molecules form a matrix which surrounds the at least one discrete area with the monomolecular layer composed of bispyridinium molecules.

Abstract: A polythiophene polymer with high charge-carrier mobilities, a method for fabricating the polymer, and a semiconductor component and an organic field effect transistor including the polymer are provided. The polymer has electrical semiconductor characteristics and includes a backbone formed from thiophene groups. The thiophene groups carry a side group in the 3rd and 4th positions that can itself have semiconductor characteristics. The polymers have a high mobility of the charge carriers and are therefore suitable for fabricating electronic components such as field effect transistors.

Abstract: Materials are described for producing memory cells which have a size in the nanometer range and include a CT complex located between two electrodes. The CT complex includes thiophene derivatives, pyrrole derivatives or phthalocyanines together with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes or perylene compounds.

Abstract: A field effect transistor includes a gate dielectric with a self-assembled monolayer of an organic compound, where the organic compound includes a phosphonic acid group. The phosphonic acid group additionally has an organic radical selected from the group consisting of (a) an alkyl chain including 1 to 20 carbon atoms, (b) oligo(thio)ether chains and/or c) aromatic or heteroaromatic compounds. In addition, a method for fabricating a field effect transistor includes forming a self-assembled monolayer of an organic compound as a gate dielectric, where the organic compound includes a phosphonic acid group.

Abstract: A method for fabricating a field effect transistor, in which, after the etching of the gate electrode, the removal of the etching mask is omitted since the etching mask serves as a gate dielectric. The etching mask or the dielectric has a self-assembled monolayer of an organic compound.