Abstract: A process for the wet chemical treatment of a semiconductor wafer in a vessel, in which the semiconductor wafer is brought into contact with a liquid in which very small gas bubbles are dispersed. Two circuits are set up for conveying the liquid, with a first circuit between a reservoir and the vessel, for conveying the liquid from the reservoir to the vessel; and with a second circuit from the reservoir back to the reservoir, in order to enrich the liquid with a gas on the way back to the reservoir, so that the gas bubbles can form.

Abstract: A process for the wet-chemical surface treatment of a semiconductor wafer following a mechanical surface treatment, in particular following a mechanical surface treatment in a lapping machine, includes a sequence of treatment steps. The process essentially includes a wet-chemical surface cleaning, preferably for neutralizing and eliminating the lapping slurry, an acid etching treatment, preferably for eliminating the mechanically imposed damage and for surface smoothing and removal of metals. There is a final step of drying and rendering the cleaned and etched surface hydrophilic.