Abstract: A bonding contact area on a semiconductor substrate is provided that includes a reinforcing structure having at least one conductive material layer arranged on the semiconductor substrate to receive the patterned reinforcing structure, a metal layer formed as a bonding contact layer with a bonding surface and arranged on a conductive material layer. Whereby, below the bonding surface, an oxide layer having at least about a 2 ?m thickness is arranged, which extends beyond the edge of the bonding surface. The reinforcing structure is arranged in the oxide layer, when viewed looking down onto the bonding surface, outside the bonding surface within the oxide layer.

Abstract: A bonding contact area on a semiconductor substrate is provided that includes a reinforcing structure having at least one conductive material layer arranged on the semiconductor substrate to receive the patterned reinforcing structure, a metal layer formed as a bonding contact layer with a bonding surface and arranged on a conductive material layer. Whereby, below the bonding surface, an oxide layer having at least about a 2 ?m thickness is arranged, which extends beyond the edge of the bonding surface. The reinforcing structure is arranged in the oxide layer, when viewed looking down onto the bonding surface, outside the bonding surface within the oxide layer.

Abstract: A method for producing a defect card for individual dies located on a wafer, comprising: producing first and second defect cards, where the defective individual dies whose adjoining individual dies form an environment having a defect density up to a first value (?1) are classified as defective on the first defect card, and where the defective individual dies which are not considered upon the production of the first defect card are classified as defective on the second defect card; producing a third defect card by classifying additional individual dies on the second defect card as defective, where adjoining individual dies of the additional defective individual dies form an environment having at least one defect density of a second value (?2), which second value is less than the first value (?1); and producing a fourth defect card by unifying the third defect card with the first defect card.

Abstract: In a procedure for measuring the concentration of a target gas, a gas sensor is provided whose sensor signal at constant temperature is dependent on a target gas concentration and has a lower measurement sensitivity in a first modulation range than in a second modulation range. The position of the modulation ranges is dependent on the temperature. The temperature of the gas sensor is controlled so that the sensor signal is essentially independent of the target gas concentration and lies within the second modulation range. The temperature of the gas sensor is then a measurement for the target gas concentration.

Abstract: A method for producing a defect card for individual dies located on a wafer, comprising: producing first and second defect cards, where the defective individual dies whose adjoining individual dies form an environment having a defect density up to a first value (?1) are classified as defective on the first defect card, and where the defective individual dies which are not considered upon the production of the first defect card are classified as defective on the second defect card; producing a third defect card by classifying additional individual dies on the second defect card as defective, where adjoining individual dies of the additional defective individual dies form an environment having at least one defect density of a second value (?2), which second value is less than the first value (?1); and producing a fourth defect card by unifying the third defect card with the first defect card.

Abstract: In a procedure for measuring the concentration of a target gas, a gas sensor is provided whose sensor signal at constant temperature is dependent on a target gas concentration and has a lower measurement sensitivity in a first modulation range than in a second modulation range. The position of the modulation ranges is dependent on the temperature. The temperature of the gas sensor is controlled so that the sensor signal is essentially independent of the target gas concentration and lies within the second modulation range. The temperature of the gas sensor is then a measurement for the target gas concentration.

Abstract: A flow sensor component consists of a diaphragm of monocrystalline silicon, the diaphragm having arranged therein filled slots which are filled with a thermally insulating material and which penetrate the diaphragm from a first main surface to a second main surface thereof. The filled slots defining at least one heating area of the diaphragm provided with at least one heating element and at least one detection area of the diaphragm provided with at least one temperature detection element, the filled slots thermally insulating the heating area and the detection area from one another and surrounding the heating area and the detection area completely.

Abstract: Emulsion graft copolymers are composed ofA) from 5 to 18% by weight of a first stage comprisinga.sub.1) from 85 to 99% by weight of methyl methacrylate,a.sub.2) from 1 to 15% by weight of C.sub.1 -C.sub.8 -alkyl acrylate,a.sub.3) from 0 to 2% by weight of allyl methacrylate anda.sub.4) from 0 to 3% by weight of further di- or polyfunctional comonomers,B) from 25 to 35% by weight of a second stage comprisingb.sub.1) from 10 to 25% by weight of vinylaromatic monomers,b.sub.2) from 75 to 90% by weight of C.sub.1 -C.sub.20 -alkyl acrylate andb.sub.3) from 0 to 3% by weight of allyl methacrylate,C) from 30 to 40% by weight of a third stage comprisingc.sub.1) from 15 to 27% by weight of vinylaromatic monomers,c.sub.2) from 73 to 85% by weight of C.sub.1 -C.sub.20 -alkyl acrylate andc.sub.3) from 0 to 3% by weight of allyl methacrylate andD) from 15 to 30% by weight of a fourth stage comprisingd.sub.1) from 85 to 96% by weight of methyl methacrylate,d.sub.2) from 3.8 to 10% by weight of C.sub.1 -C.sub.

Abstract: Molding materials having stress cracking resistance containingA) from 49 to 99% by weight of a polymer obtainable by polymerizing a C.sub.1 -C.sub.20 -alkyl ester of methacrylic or acrylic acid or a mixture of said esters,B) from 0.95 to 50% by weight of a polymer obtainable by polymerizing a monomer mixture comprisingb.sub.1) from 75 to 82% by weight of a vinyl aromatic monomer andb.sub.2) from 18 to 25% by weight of acrylonitrile or methacrylonitrile or a mixture thereof, andC) from 0.05 to 1% by weight of a mixture containingc.sub.1) a triaryl phosphite of the formula I ##STR1## c.sub.2) an amine of the formula II ##STR2## where n is from 2 to 10, c.sub.3) a benzotriazole of the formula III ##STR3## and C.sub.4) a phenol.

Abstract: Reduction of the wall coating in reaction containers in the suspension polymerization of monomers containing acrylate and/or methacrylate groups and use of a buffer and of a dispersant for reducing the wall coating in reaction containers in the suspension polymerization of monomers containing acrylate and/or methacrylate groups.

Abstract: A method for the global planarization of surfaces of semiconductor integrated circuits which involves etching back an auxiliary layer made of a dielectric with a single auxiliary photoresist step is disclosed.

Abstract: An electro furnace for metallurgic operations has its top connected to a vertically extending cylinder, into which a charge pipe leads at an oblique angle. A ceramic plug glides in the cylinder in piston like fashion for selective opening and closing the opening from said charge pipe. Any burden and ore mixture will therefore fall freely from the charge pipe whenever the plug is shifted up to open the gate.