Patents by Inventor Guenther H. Schwuttke

Guenther H. Schwuttke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt
    Patent number: 4152194
    Abstract: A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.
    Type: Grant
    Filed: July 29, 1977
    Date of Patent: May 1, 1979
    Inventors: Robert A. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Frosch, Theodore F. Ciszek, Guenther H. Schwuttke