Patents by Inventor Gugang CHEN

Gugang CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240116035
    Abstract: Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure.
    Type: Application
    Filed: June 21, 2023
    Publication date: April 11, 2024
    Inventors: Shutang CHEN, Gugang CHEN
  • Publication number: 20240040923
    Abstract: Aspects of the present disclosure generally relate to short-wave infrared (SWIR) materials, SWIR detectors, and methods of use. In an aspect, a SWIR detector is provided and includes a conductive layer disposed over a first portion of a substrate, the conductive layer having a trench therein, and a hole transport layer disposed over at least a second portion of the substrate and within the trench of the conductive layer. The SWIR detector further includes a light conversion layer disposed over at least a portion of the hole transport layer, the light conversion layer comprising a composition having the formula AaBbMcXd, wherein: A is an organic group or ion thereof; B is an organic group, an inorganic group, or ion thereof; M is a metal or ion thereof; X is a halogen or ion thereof; and a, b, c, and d are numbers expressing amounts of A, B, M, and X.
    Type: Application
    Filed: August 1, 2022
    Publication date: February 1, 2024
    Inventors: Gugang CHEN, Yi RAO
  • Patent number: 11873566
    Abstract: A method of electrochemical reduction of CO2 includes the use of a catalyst of Cu/Cu2O particles including Cu/Cu2O interfaces. The catalyst may be included in an electrochemical cell for the conversion of CO2 to value-added products. The electrochemical cell may include an anode, a cathode including the Cu/Cu2O particles including Cu/Cu2O interfaces, and an aqueous medium containing CO2 or CO3?2. The CO2 or CO3?2 is reduced by contacting the Cu/Cu2O particles with the aqueous medium while supplying electricity to the cell. The conversion of CO2 by the electrochemical reduction thereof has higher Faradaic Efficiency due to the Cu/Cu2O interfaces in the Cu/Cu2O particles.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: January 16, 2024
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Gugang Chen, Yi Rao, Xia Li
  • Patent number: 11833497
    Abstract: Aspects of the present disclosure generally relate to copper-containing bimetallic structures, to processes for producing the copper-containing bimetallic structure, and to uses of the copper-containing bimetallic structures as, e.g., catalysts. In an aspect, a process for forming a bimetallic structure is provided. The process includes forming a mixture comprising a first precursor and a second precursor, the first precursor comprising copper, the second precursor comprising a phosphine. The process further includes introducing a third precursor with the mixture to form the bimetallic structure, the third precursor comprising a Group 8-10 metal, the bimetallic structure comprising copper (Cu), the Group 8-10 metal (M), phosphorous (P), and nitrogen (N), the bimetallic structure having the formula (Cu)a(M)b(P)c(N)d, wherein a molar ratio of a:b is from about 1:99 to about 99:1, and a molar ratio of a:(c+d) is from about 500:1 to about 1:1.
    Type: Grant
    Filed: April 14, 2021
    Date of Patent: December 5, 2023
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Shutang Chen, Gugang Chen
  • Publication number: 20230381745
    Abstract: Aspects described herein generally relate to bimetallic structures, syntheses thereof, and uses thereof. In an embodiment, a process for forming a bimetallic nanoframe is provided. The process includes forming a first bimetallic structure by reacting a first precursor comprising platinum (Pt) and a second precursor comprising a Group 8-11 metal (M2), wherein M2 is free of Pt; reacting a third precursor comprising Pt with the first bimetallic structure to form a second bimetallic structure, the second bimetallic structure having a higher molar ratio of Pt to Group 8-11 metal than the first bimetallic structure; and introducing the second bimetallic structure with an acid to form the bimetallic nanoframe, the bimetallic nanoframe having a higher molar ratio of Pt to Group 8-11 metal than that of the second bimetallic structure, the bimetallic nanoframe having the formula: (Pt)a(M2)b, wherein: a is the amount of Pt; b is the amount of M2.
    Type: Application
    Filed: July 27, 2023
    Publication date: November 30, 2023
    Inventors: Shutang CHEN, Gugang CHEN
  • Patent number: 11766660
    Abstract: Aspects described herein generally relate to bimetallic structures, syntheses thereof, and uses thereof. In an embodiment, a process for forming a bimetallic nanoframe is provided. The process includes forming a first bimetallic structure by reacting a first precursor comprising platinum (Pt) and a second precursor comprising a Group 8-11 metal (M2), wherein M2 is free of Pt; reacting a third precursor comprising Pt with the first bimetallic structure to form a second bimetallic structure, the second bimetallic structure having a higher molar ratio of Pt to Group 8-11 metal than the first bimetallic structure; and introducing the second bimetallic structure with an acid to form the bimetallic nanoframe, the bimetallic nanoframe having a higher molar ratio of Pt to Group 8-11 metal than that of the second bimetallic structure, the bimetallic nanoframe having the formula: (Pt)a(M2)b, wherein: a is the amount of Pt; b is the amount of M2.
    Type: Grant
    Filed: March 16, 2022
    Date of Patent: September 26, 2023
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Shutang Chen, Gugang Chen
  • Publication number: 20230294076
    Abstract: Aspects described herein generally relate to bimetallic structures, syntheses thereof, and uses thereof. In an embodiment, a process for forming a bimetallic nanoframe is provided. The process includes forming a first bimetallic structure by reacting a first precursor comprising platinum (Pt) and a second precursor comprising a Group 8-11 metal (M2), wherein M2 is free of Pt; reacting a third precursor comprising Pt with the first bimetallic structure to form a second bimetallic structure, the second bimetallic structure having a higher molar ratio of Pt to Group 8-11 metal than the first bimetallic structure; and introducing the second bimetallic structure with an acid to form the bimetallic nanoframe, the bimetallic nanoframe having a higher molar ratio of Pt to Group 8-11 metal than that of the second bimetallic structure, the bimetallic nanoframe having the formula: (Pt)a(M2)b, wherein: a is the amount of Pt; b is the amount of M2.
    Type: Application
    Filed: March 16, 2022
    Publication date: September 21, 2023
    Inventors: Shutang CHEN, Gugang CHEN
  • Patent number: 11717809
    Abstract: Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure.
    Type: Grant
    Filed: August 30, 2022
    Date of Patent: August 8, 2023
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Shutang Chen, Gugang Chen
  • Publication number: 20220410265
    Abstract: A hollow, two-dimensional nanostructure having a plurality of first metal atoms and a plurality of second metal atoms, the first metal being copper, nickel, cobalt, iron, or a combination thereof and the second metal being gold, platinum, palladium, or a combination thereof.
    Type: Application
    Filed: September 1, 2022
    Publication date: December 29, 2022
    Inventors: Shutang CHEN, Gugang CHEN
  • Publication number: 20220410130
    Abstract: Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure.
    Type: Application
    Filed: August 30, 2022
    Publication date: December 29, 2022
    Inventors: Shutang CHEN, Gugang CHEN
  • Patent number: 11518688
    Abstract: All inorganic perovskites for short-wave IR (SWIR) devices having improved chemical stability and long-term stability. Improved methods of making all inorganic perovskites for short-wave IR (SWIR) devices are also disclosed herein.
    Type: Grant
    Filed: November 25, 2020
    Date of Patent: December 6, 2022
    Assignees: HONDA MOTOR CO., LTD., UTAH STATE UNIVERSITY
    Inventors: Gugang Chen, Yi Rao, Xia Li
  • Publication number: 20220331788
    Abstract: Aspects of the present disclosure generally relate to copper-containing bimetallic structures, to processes for producing the copper-containing bimetallic structure, and to uses of the copper-containing bimetallic structures as, e.g., catalysts. In an aspect, a process for forming a bimetallic structure is provided. The process includes forming a mixture comprising a first precursor and a second precursor, the first precursor comprising copper, the second precursor comprising a phosphine. The process further includes introducing a third precursor with the mixture to form the bimetallic structure, the third precursor comprising a Group 8-10 metal, the bimetallic structure comprising copper (Cu), the Group 8-10 metal (M), phosphorous (P), and nitrogen (N), the bimetallic structure having the formula (Cu)a(M)b(P)c(N)d, wherein a molar ratio of a:b is from about 1:99 to about 99:1, and a molar ratio of a:(c+d) is from about 500:1 to about 1:1.
    Type: Application
    Filed: April 14, 2021
    Publication date: October 20, 2022
    Inventors: Shutang CHEN, Gugang CHEN
  • Publication number: 20220324882
    Abstract: Aspects of the present disclosure generally relate to functionalized metals, to processes for producing functionalized metals, and to uses of functionalized metals as, e.g., sensing materials for chemiresistive sensors. In an aspect, a process for producing a functionalized metal is provided. The process includes introducing, under first conditions, a first precursor comprising a Group 10 to Group 14 metal with an amine to form a second precursor comprising the Group 10 to Group 14 metal. The process further includes introducing, under second conditions, the second precursor with a third precursor to form the functionalized metal, the third precursor comprising an organic material having the formula HS—R—COOH, wherein R is an unsubstituted hydrocarbyl, a substituted hydrocarbyl, an unsubstituted alkoxy, or a substituted alkoxy.
    Type: Application
    Filed: April 9, 2021
    Publication date: October 13, 2022
    Inventors: Shutang Chen, Gugang Chen
  • Patent number: 11458538
    Abstract: A method for preparing a hollow multi-metallic nanostructure, the method including the steps of providing a first metal nanostructure having a plurality of first metal atoms, and performing a synthetic strategy, the synthetic strategy including replacing a portion of the plurality of first metal atoms with a corresponding number of second metal ions, and promoting first metal atom diffusion to provide the hollow multi-metallic nanostructure.
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: October 4, 2022
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Shutang Chen, Gugang Chen
  • Patent number: 11458461
    Abstract: Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: October 4, 2022
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Shutang Chen, Gugang Chen
  • Publication number: 20220241857
    Abstract: The present disclosure relates to a method for synthesizing Pd nanocubes having an average size less than 10 nm. The reaction temperature, reaction time, and molar ratios of TOP/Pd-OLA can be used to control size and formation of the Pd nanocubes. The present disclosure is also directed to Pd nanocubes, less than 10 nm, having face centered cubic structures. Pd nanocubes of the present disclosure are an effective catalyst for CO2 reduction reaction with excellent selectivity for CO. Small sized Pd nanocubes can be used not only as the seeds to prepare other metal nanocubes, but can also as powerful catalysts for a wide variety of reactions in different industrial processes.
    Type: Application
    Filed: April 19, 2022
    Publication date: August 4, 2022
    Inventors: Shutang Chen, Gugang Chen
  • Patent number: 11339487
    Abstract: A method of electrochemical reduction of carbon dioxide includes the use of multi-faceted Cu2O crystals as a catalyst to convert CO2 to value-added products. An electrochemical cell for the electrochemical reduction of carbon dioxide includes a cathode including the multi-faceted Cu2O crystals. The multi-faceted Cu2O crystals have at least two different types of facets with different Miller indices. The multi-faceted Cu2O crystals include steps and kinks present at the transitions between the different types of facets. These steps and kinks improve the Faradaic Efficiency of the conversion of carbon dioxide. The multi-faceted Cu2O crystals may be nanosized. The multi-faceted Cu2O crystals may include 18-facet, 20-facet, and/or 50-facet Cu2O crystals.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: May 24, 2022
    Assignees: HONDA MOTOR CO., LTD., UTAH STATE UNIVERSITY
    Inventors: Gugang Chen, Yi Rao, Xia Li
  • Patent number: 11331725
    Abstract: The present disclosure relates to a method for synthesizing Pd nanocubes having an average size less than 10 nm. The reaction temperature, reaction time, and molar ratios of TOP/Pd-OLA can be used to control size and formation of the Pd nanocubes. The present disclosure is also directed to Pd nanocubes, less than 10 nm, having face centered cubic structures. Pd nanocubes of the present disclosure are an effective catalyst for CO2 reduction reaction with excellent selectivity for CO. Small sized Pd nanocubes can be used not only as the seeds to prepare other metal nanocubes, but can also as powerful catalysts for a wide variety of reactions in different industrial processes.
    Type: Grant
    Filed: July 19, 2019
    Date of Patent: May 17, 2022
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Shutang Chen, Gugang Chen
  • Patent number: 11311939
    Abstract: A method for preparing copper-solver and copper-gold porous microsheets with specific pore sizes, the method including the steps of providing a solution of copper microsheets and adding a silver or gold solution under controlled temperature, the reaction conditions can be changed to determine pore sizes.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: April 26, 2022
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Gugang Chen, Shutang Chen
  • Publication number: 20220119966
    Abstract: A method of electrochemical reduction of CO2 includes the use of a catalyst of Cu/Cu2O particles including Cu/Cu2O interfaces. The catalyst may be included in an electrochemical cell for the conversion of CO2 to value-added products. The electrochemical cell may include an anode, a cathode including the Cu/Cu2O particles including Cu/Cu2O interfaces, and an aqueous medium containing CO2 or CO3?2. The CO2 or CO3?2 is reduced by contacting the Cu/Cu2O particles with the aqueous medium while supplying electricity to the cell. The conversion of CO2 by the electrochemical reduction thereof has higher Faradaic Efficiency due to the Cu/Cu2O interfaces in the Cu/Cu2O particles.
    Type: Application
    Filed: February 26, 2020
    Publication date: April 21, 2022
    Inventors: Gugang CHEN, Yi RAO, Xia LI