Patents by Inventor Gui-Ryong Ahn

Gui-Ryong Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical mechanical polishing slurry composition for shallow trench isolation process of semiconductor
    Patent number: 7497966
    Abstract: The present invention is related to a chemical-mechanical polishing slurry for shallow trench isolation, more concretely, to a chemical-mechanical polishing slurry comprising an aqueous abrasive solution comprised of deionized water, polishing particles, and a polishing particle dispersant; and an aqueous additive solution comprised of a carboxylic acid polymer compound, a nitrogen-containing organic cyclic compound, and an amine-group compound. The removal selectivity of the slurry may be improved by significantly lowering the speed of polishing of nitride film by adding a nitrogen-containing organic cyclic compound to an acrylic acid polymer compound, and by increasing the speed of removal of silicon oxide film by adding an amine-group compound, which is an accelerator of hydrolysis of silicon oxide film.
    Type: Grant
    Filed: March 24, 2005
    Date of Patent: March 3, 2009
    Assignee: Hanwha Chemical Corporation
    Inventors: Ho-Seong Nam, Jin-Seo Lee, Gui-Ryong Ahn
  • Chemical Mechanical Polishing Slurry Composition for Shallow Trench Isolation Process of Semiconductor
    Publication number: 20070220813
    Abstract: The present invention is related to a chemical-mechanical polishing slurry for shallow trench isolation, more concretely, to a chemical-mechanical polishing slurry comprising an aqueous abrasive solution comprised of deionized water, polishing particles, and a polishing particle dispersant; and an aqueous additive solution comprised of a carboxylic acid polymer compound, a nitrogen-containing organic cyclic compound, and an amine-group compound. The removal selectivity of the slurry may be improved by significantly lowering the speed of polishing of nitride film by adding a nitrogen-containing organic cyclic compound to an acrylic acid polymer compound, and by increasing the speed of removal of silicon oxide film by adding an amine-group compound, which is an accelerator of hydrolysis of silicon oxide film.
    Type: Application
    Filed: March 24, 2005
    Publication date: September 27, 2007
    Applicant: HANWHA CHEMICAL CORPORATION
    Inventors: Ho-Seong Nam, Jin-Seo Lee, Gui-Ryong Ahn