Abstract: The present invention relates to a gas distribution unit for a fluidized bed reactor system, a fluidized bed reactor system having the gas distribution unit, and a method for preparing granular polysilicon using the fluidized bed reactor system. The gas distribution unit for a fluidized bed reactor system according to the present invention enables gas flow rate control and gas composition control for each zone within the plenum chamber. In addition, a fluidized bed reactor system having the gas distribution unit enables shape control of a fluidized bed (in particular, transition between a bubbling fluidized bed and a spout fluidized bed). The method for preparing granular polysilicon using the fluidized bed reactor system not only simultaneously improves process stability and productivity, but also enables more flexible handling in the event of an abnormal situation.

Abstract: A method for preparing trichlorosilane according to an embodiment of the present invention comprises the steps of: supplying surface-modified metal silicide and metal grade silicon to a reaction unit; supplying silicon tetrachloride and hydrogen to the reaction unit; and supplying a product, which is generated by a reaction of metal grade silicon, silicon tetrachloride, and hydrogen in the presence of metal silicide in the reaction unit, to a separation unit, and separating a trichlorosilane component. In cases where a silicon tetrachloride hydrochlorination reaction is performed using the method for preparing trichlorosilane according to the embodiment of the present invention, the yield of trichlorosilane can be raised.

Abstract: The present invention relates to a purification method and a purification apparatus for off-gas. More specifically, the present invention relates to a purification method and a purification apparatus for off-gas, capable of lowering the concentration of hydrogen chloride and separating high-purity hydrogen from the off-gas, which is discharged after performing a polysilicon deposition process by a chemical vapor deposition reaction.

Abstract: The present invention relates to a purification method and a purification apparatus for off-gas. More specifically, the present invention relates to a purification method and a purification apparatus for off-gas, capable of lowering the concentration of hydrogen chloride and separating high-purity hydrogen from the off-gas, which is discharged after performing a polysilicon deposition process by a chemical vapor deposition reaction.

Abstract: The present invention relates to a gas distribution unit for a fluidized bed reactor system, a fluidized bed reactor system having the gas distribution unit, and a method for preparing granular polysilicon using the fluidized bed reactor system. The gas distribution unit for a fluidized bed reactor system according to the present invention enables gas flow rate control and gas composition control for each zone within the plenum chamber. In addition, a fluidized bed reactor system having the gas distribution unit enables shape control of a fluidized bed (in particular, transition between a bubbling fluidized bed and a spout fluidized bed). The method for preparing granular polysilicon using the fluidized bed reactor system not only simultaneously improves process stability and productivity, but also enables more flexible handling in the event of an abnormal situation.

Abstract: The present invention relates to a purification method and a purification apparatus for off-gas. More specifically, the present invention relates to a purification method and a purification apparatus for off-gas, capable of lowering the concentration of hydrogen chloride and separating high-purity hydrogen from the off-gas, which is discharged after performing a polysilicon deposition process by a chemical vapor deposition reaction.

Abstract: A method for preparing trichlorosilane according to an embodiment of the present invention comprises the steps of: supplying surface-modified metal silicide and metal grade silicon to a reaction unit; supplying silicon tetrachloride and hydrogen to the reaction unit; and supplying a product, which is generated by a reaction of metal grade silicon, silicon tetrachloride, and hydrogen in the presence of metal silicide in the reaction unit, to a separation unit, and separating a trichlorosilane component. In cases where a silicon tetrachloride hydrochlorination reaction is performed using the method for preparing trichlorosilane according to the embodiment of the present invention, the yield of trichlorosilane can be raised.

Abstract: The present invention relates to a method for manufacturing polysilicon. According to the present invention, meltdown can be prevented during the growth of silicon rod, and a polycrystalline silicon rod having a larger diameter can be shortly manufactured with a minimal consumption of energy.

Abstract: This disclosure relates to a method for purification of off-gas and a device for the same. More particularly, this disclosure relates to a method for purification of off-gas that removes hydrogen chloride from the off-gas discharged after conducting a polysilicon deposition process by chemical vapor deposition, and can separate hydrogen of high purity, and a device for the same.

Abstract: This invention relates to a method of preparing trichlorosilane, which enables trichlorosilane to be obtained at improved yield using silicon having copper silicide uniformly formed thereon, by uniformly distributing and applying a copper compound on the surface of silicon and then performing heat treatment.

Abstract: The present invention relates to a method for preparing trichlorosilane. According to the method for preparing trichlorosilane of the present invention, trichlorosilane may be obtained with improved yield using silicon where copper silicide is formed.

Abstract: Provided is a method of manufacturing a solar cell, wherein a solar cell is manufactured by combining a damage removal etching process, a texturing process and an edge isolation process. The method is advantageous in that RIE and DRE are conducted, and then DRE/PSG and/or an edge isolation removal process are simultaneously conducted, so that the movement of a substrate (that is, a wafer) is minimized, thereby reducing the damage rate of the substrate.

Abstract: The present invention relates to a method for manufacturing polysilicon. According to the present invention, meltdown can be prevented during the growth of silicon rod, and a polycrystalline silicon rod having a larger diameter can be shortly manufactured with a minimal consumption of energy.

Abstract: The present invention relates to a more advanced preparation method of organic-transition metal hydride as a hydrogen storage material, precisely a more advanced preparation method of organic-transition metal hydride containing aryl or alkyl group that facilitates safe and reverse storage of massive amount of hydrogen. The present invention relates to a preparation method of an organic-transition metal hydride comprising the steps of preparing a complex reducing agent composition by reacting alkali metal, alkali earth metal or a mixture thereof and (C10-C20) aromatic compound in aprotic polar solvent and preparing organic-transition metal hydride by reacting the prepared complex reducing agent composition and organic transition metal halide. The method of the present invention has advantages of minimizing the numbers and the amounts of byproducts by using a complex reducing agent and producing organic-transition metal hydride safely without denaturation under more moderate reaction conditions.

Abstract: Provided is a method of manufacturing a solar cell, wherein a solar cell is manufactured by combining a damage removal etching process, a texturing process and an edge isolation process. The method is advantageous in that RIE and DRE are conducted, and then DRE/PSG and/or an edge isolation removal process are simultaneously conducted, so that the movement of a substrate (that is, a wafer) is minimized, thereby reducing the damage rate of the substrate.

Abstract: Provided are a solar cell and a method for manufacturing the same, and more particularly, a solar cell for forming a selective emitter structure and a surface texture using dry plasma etching at the same time, and a method for manufacturing the same. The solar cell includes a silicon semiconductor substrate; an emitter doping layer having a surface, which is textured by a texturing process on an upper portion of the silicon semiconductor substrate and selectively doped; an anti-reflective film layer formed on a front of the substrate; a front electrode accessing to the emitter doping layer by penetrating the anti-reflective film layer; and a rear electrode accessing to a rear of the silicon semiconductor substrate.

Abstract: The present invention relates to substances which can be applied to the technical fields of gas storages, polymerization catalysts and optical isomers, their intermediates, and processes for preparing the same, which is characterized in that 1) possible disintegration of structure of the scaffold material (SM) is impeded, and 2) they are prepared by a simple manufacturing system as compared to the substances conventionally suggested in the application field. Specifically, it relates to scaffold material-transition metal hydride complexes comprised of scaffold material (SM) and transition metal hydride (M1H(n-1)) which is chemically bonded to the functional groups formed on the scaffold material, SM-transition metal halide complex and SM-transition metal ligand complex as the precursors, and a process for preparing the same. The SM-transition metal hydride complex according to the present invention is a substance for hydrogen storage which adsorbs hydrogen via Kubas adsorption.

Abstract: The present invention relates to a more advanced preparation method of organic-transition metal hydride as a hydrogen storage material, precisely a more advanced preparation method of organic-transition metal hydride containing aryl or alkyl group that facilitates safe and reverse storage of massive amount of hydrogen. The present invention relates to a preparation method of an organic-transition metal hydride comprising the steps of preparing a complex reducing agent composition by reacting alkali metal, alkali earth metal or a mixture thereof and (C10˜C20) aromatic compound in aprotic polar solvent; and preparing organic-transition metal hydride by reacting the prepared complex reducing agent composition and organic-transition metal halide. The method of the present invention has advantages of minimizing the numbers and the amounts of byproducts by using a complex reducing agent and producing organic-transition metal hydride safely without denaturation under more moderate reaction conditions.

Abstract: The present invention relates to an improved preparation method of an organic-transition metal hydride as a hydrogen storage material, especially an improved preparation method of an organic-transition metal hydride containing aryl or alkyl group that facilitates safe and reversible storage of a massive amount of hydrogen. The present invention also relates to a preparation method of an organic-transition metal hydride comprising the steps of: preparing a complex reducing agent composition by reacting alkali metal, alkali earth metal or a mixture thereof and a C10 to C20 aromatic compound in aprotic polar solvent; and preparing the organic-transition metal hydride by reacting the prepared complex reducing agent composition with an organic-transition metal halide in the absence of a hydrogen source.

Abstract: The present invention relates to substances which can be applied to the technical fields of gas storages, polymerization catalysts and optical isomers, their intermediates, and processes for preparing the same, which is characterized in that 1) possible disintegration of structure of the scaffold material (SM) is impeded, and 2) they are prepared by a simple manufacturing system as compared to the substances conventionally suggested in the application field. Specifically, it relates to scaffold material-transition metal hydride complexes comprised of scaffold material (SM) and transition metal hydride (M1H(n-1)) which is chemically bonded to the functional groups formed on the scaffold material, SM-transition metal halide complex and SM-transition metal ligand complex as the precursors, and a process for preparing the same. The SM-transition metal hydride complex according to the present invention is a substance for hydrogen storage which adsorbs hydrogen via Kubas adsorption.