Abstract: A MIS field effect transistor having a source zone of a first impurity type formed in a semiconductor substrate immediately below one planar surface thereof, a drain zone of the first conductivity type in said substrate spaced from the source zone immediately below said one surface, a third zone, of said first impurity type in said substrate extending between said source and drain zones and extending deeper in said substrate than either said source or drain zones, a thin buried zone of the second conductivity type in said substrate spaced below and around the ends of said source zone, the region of said buried zone where it lies between said source and drain zones providing a channel whose length is only the thickness of the buried zone in the region where the buried zone reaches the substrate surface. A process for producing such a transistor is also disclosed.

Abstract: A method of producing a light conductor structure or controllable coupler having a pair of light conductors embedded in a substrate of an electro-optical material and having electrodes arranged therebetween characterized by applying a layer of polycrystalline silicon on one surface of the substrate; etching away a portion of the layer to form a doping or diffusion mask; applying a layer of diffusion material on the mask and exposed silicon-free portions of the surface; diffusing the diffusion material into the silicon-free portions to form the light conductors; applying a layer of negative acting photo-lacquer on the layer of diffusion material and the conductors; projecting light through the substrate with the remaining portions of the silicon layer acting as a mask to expose the photo-lacquer; developing the layer of photo-lacquer to remove unexposed portions with the remaining portions of the lacquer covering the light conductors; removing the remaining portions of the silicon layer; applying a metal layer

Abstract: Process for the production of a planar conductor path system for integrated semiconductor circuits which includes forming a metal layer on a planar surface of a base, forming a masking layer on the metal layer over those regions where the conductive path is to be, oxidizing electrolessly in acqueous solution those areas of the metal layer not covered by the masking layer.

Abstract: A method for producing a light conductor structure having a pair of light conductors embedded in a substrate and electrodes arranged between and along the light conductors, which structure is particularly adapted for use as an electrically controllable coupler, characterized by providing a substrate of an electro-optical material having a c-axis parallel to one surface of the substrate and extending at right angles to the longitudinal axes of the later formed light electrodes, forming a layer of polycrystalline silicon in zones of the substrate, which lie adjacent to second zones of said one surface in which second zones the light conductors will be formed; applying a layer of diffusion material to the silicon layer and the second zones which are free of silicon; diffusing the diffusion material into the substrate by heating to an elevated temperature to form light conductors by increasing the index of refraction of the light conductor above the index of refraction of the remaining portions of the substrate;