Abstract: A wafer including a mask on one face and at least one layer on an opposite face, wherein the mask has at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle, the method including: providing a wafer having a mask on one face and at least one layer on an opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle, the method including: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may include a metal nitride layer.

Abstract: The present invention relates to a method and a system for determining a temperature value of a molten metal bath. The method according to the invention has been proven to be especially suitable for installations of metallurgical vessels which are constantly moved during the metal making process.

Abstract: A method of forming a resistor circuit, the method comprising forming a first resistor comprising a first type of resistor, forming a second resistor comprising a second type of resistor, the first type of resistor being different from the second type of resistor and simultaneously doping a first part of the first resistor and a second part of the second resistor, the first resistor and the second resistor being configured such that doping of the first part of the first resistor and the second part of the second resistor defines a temperature coefficient of the first resistor and a temperature coefficient of the second resistor, wherein the temperature coefficient of the first resistor and the temperature coefficient of the second resistor have opposite signs.

Abstract: A method of forming a resistor circuit, the method comprising forming a first resistor comprising a first type of resistor, forming a second resistor comprising a second type of resistor, the first type of resistor being different from the second type of resistor and simultaneously doping a first part of the first resistor and a second part of the second resistor, the first resistor and the second resistor being configured such that doping of the first part of the first resistor and the second part of the second resistor defines a temperature coefficient of the first resistor and a temperature coefficient of the second resistor, wherein the temperature coefficient of the first resistor and the temperature coefficient of the second resistor have opposite signs.

Abstract: In a photosensitive semiconductor diode device (1), in particular, a PIN diode device (2) for converting optical signals into electronic signals, the semiconductor diode is provided with a lead for contacting the doped regions and for electroconductively connecting them to a following circuit (11), e.g., an electronic amplifier. To realize a matching between the semiconductor diode and the following circuit that is effective over a wide bandwidth by means of a passive matching circuit (10), the lead contains the matching circuit such that lead (4, 5) is constructed on at least part of its length (L) as a coplanar line or a microstrip line such that conductor width (S) and/or conductor spacing width (gap width W) varies along its length area (L) of the lead, with the characteristic impedance of this lead varying along the corresponding part of the line. A very high operating frequency and a low signal attenuation are thereby achieved, among other things.