Abstract: High voltage electronic contacts (S, S') and associated devices including TRIMOS (MOS TRIacs) devices connected in anti-parallel fashion between two terminals (S.sub.1 /S'.sub.2, S.sub.2 /S'.sub.1). Each electronic contact (S, S') is controlled via a control terminal (S.sub.4) by two auxiliary electronic contacts (NA, NB) each able to establish a low or high impedance between the control terminal (S.sub.4) and one of the two other terminals (S.sub.1 /S'.sub.2, S.sub.2 /S'.sub.1), the impedance conditions of these auxiliary contacts (NA, NB) being opposed. A power protection circuit associated to the TRIMOS device allows the flow of a relatively high current through the electronic contacts (S, S') for the lower voltage range across it, and minimizes the power dissipation in the contacts in the higher voltage range, i.e. when abnormally high signals are applied to the contact.

Abstract: The semiconductor device and arrangement include a thyristor switch (T1-T3) with associated turn-on (DM) and turn-off (PM1, PM2) devices. The thy=ristor switch includes a PNP transistor (T1) and one or two NPN transistors (T2, T3) each of which has an emitter constituted by a path of separate regions (115) of N+ material each completely surrounded by P+ material of a zone (110). This path either has a boat shape and partly surrounds and is located at a constant distance of a substantially rectangular zone (109) of P+ material constituting the emitter of the PNP transistor (T1), or has an S-shape and is located at a constant distance of the S-shaped emitter of the PNP transistor (T1).