Abstract: The invention is related to a gas discharge-based radiation source which emits short-wavelength radiation, wherein an emitter is ionized and compressed by pulse-shaped currents between two electrodes arranged in a vacuum chamber and is excited to form an emitting plasma. According to the invention, the plasma is preserved by means of a high-frequency sequence of pulse-shaped currents the pulse repetition period of which is adjusted so as to be shorter than a lifetime of the plasma so that the plasma is kept periodically alternating between a high-energy state of an emitting compressed plasma and a low-energy state of a relaxing plasma. For exciting the relaxing plasma to the compressed plasma, excitation energy is coupled into the relaxing plasma by making use of pulse-shaped currents with repetition frequencies between 50 kHz and 4 MHz and pulse widths equal to the pulse repetition period.

Abstract: The invention is related to the adjustment of characteristics of a beam bundle of high-energy radiation emitted from a plasma, particularly for applications in semiconductor lithography. For acquiring and adjusting characteristics of a beam bundle of high-energy radiation emitted from a plasma and focused by means of collector optics, an intensity distribution of the radiation is acquired over the cross section of a convergent beam bundle in a measuring plane perpendicular to the optical axis in front of an intermediate focus of the collector optics, and intensity values are recorded in defined sectors for a quantity of reception regions of a measuring device which are aligned with different radii concentric to the optical axis, and measured quantities and control variables are determined from a comparison of the intensity values of different sectors for aligning the collector optics.

Abstract: The invention is related to the adjustment of characteristics of a beam bundle of high-energy radiation emitted from a plasma, particularly for applications in semiconductor lithography. For acquiring and adjusting characteristics of a beam bundle of high-energy radiation emitted from a plasma and focused by means of collector optics, an intensity distribution of the radiation is acquired over the cross section of a convergent beam bundle in a measuring plane perpendicular to the optical axis in front of an intermediate focus of the collector optics, and intensity values are recorded in defined sectors for a quantity of reception regions of a measuring device which are aligned with different radii concentric to the optical axis, and measured quantities and control variables are determined from a comparison of the intensity values of different sectors for aligning the collector optics.

Abstract: The invention is related to a gas discharge-based radiation source which emits short-wavelength radiation, wherein an emitter is ionized and compressed by pulse-shaped currents between two electrodes arranged in a vacuum chamber and is excited to form an emitting plasma. According to the invention, the plasma is preserved by means of a high-frequency sequence of pulse-shaped currents the pulse repetition period of which is adjusted so as to be shorter than a lifetime of the plasma so that the plasma is kept periodically alternating between a high-energy state of an emitting compressed plasma and a low-energy state of a relaxing plasma. For exciting the relaxing plasma to the compressed plasma, excitation energy is coupled into the relaxing plasma by making use of pulse-shaped currents with repetition frequencies between 50 kHz and 4 MHz and pulse widths equal to the pulse repetition period.

Abstract: The invention is directed to a method and an arrangement for cleaning optical surfaces of reflection optics which are arranged in a plasma-based radiation source or exposure device arranged downstream and contaminated by debris particles emitted by a hot plasma of the radiation source. It is the object of the invention to find a novel possibility for in-situ cleaning of the optical surfaces of reflection optics which are contaminated by debris in plasma-based radiation sources so as to allow an integrated generation of known gas radicals and the isotropic distribution thereof on the contaminated optical surfaces. According to the invention, this object is met in that the gas radicals are generated by dielectrically impeded discharge between two surface electrodes along the entire optical surface.

Abstract: The invention is directed to a method for operating plasma-based short-wavelength radiation sources, particularly EUV radiation sources, having a long lifetime and to an arrangement for generating plasma-based short-wavelength radiation. It is the object of the invention to find a novel possibility for operating plasma-based short-wavelength radiation sources with a long lifetime which permits extensive debris mitigation without the main process of radiation generation being severely impaired through the use of buffer gas and without the need for substantial additional expenditure for generating partial pressure in a spatially narrowly limited manner.

Abstract: The invention is directed to a method and an arrangement for cleaning optical surfaces of reflection optics which are arranged in a plasma-based radiation source or exposure device arranged downstream and contaminated by debris particles emitted by a hot plasma of the radiation source. It is the object of the invention to find a novel possibility for in-situ cleaning of the optical surfaces of reflection optics which are contaminated by debris in plasma-based radiation sources so as to allow an integrated generation of known gas radicals and the isotropic distribution thereof on the contaminated optical surfaces. According to the invention, this object is met in that the gas radicals are generated by dielectrically impeded discharge between two surface electrodes along the entire optical surface.

Abstract: A detector for use with an EUV photon source emitting around 11-15 nm includes at least one multilayer mirror for reflecting the beam along an optical path include a detector element, a filter for reducing the bandwidth of the beam, and the detector element. The detector element preferably comprises a Si pn diodes with doped dead region and zero surface recombination or PtSi-nSi barrier for increasing the long term stability of the detector.

Abstract: The invention is directed to a method and an arrangement for generating extreme ultraviolet (EUV) radiation, i.e., radiation of high-energy photons in the wavelength range from 11 to 14 nm, based on a gas discharge. The object of the invention, to find a novel possibility for generating EUV radiation in which an extended life of the system is achieved with stable generation of a dense, hot plasma column, is met according to the invention in that a preionization discharge is ignited between two parallel disk-shaped flat electrodes prior to the main discharge by a surface discharge along the superficies surface of a cylindrical insulator with a plasma column generated through the gas discharge with pulsed direct voltage, which preionization discharge carries out an ionization of the working gas in the discharge chamber by means of fast charged particles.

Abstract: The invention is directed to a radiation source for generating extreme ultraviolet (EUV) radiation, particularly for photolithography exposure processes. The object of the invention is to find a novel possibility for realizing radiation sources for generating extreme ultraviolet (EUV) radiation which permits a uniform basic construction for ensuring beam characteristics that are reproducible over the long term and in which the source is conceived so as to be flexible with respect to specific applications.

Abstract: The invention is directed to a detector arrangement for energy measurement of pulsed x-ray radiation, particularly for monitoring the energy emitted by pulsed EUV radiation sources.

Abstract: The invention is directed to a radiation source for generating extreme ultraviolet (EUV) radiation based on a hot, dense plasma generated by gas discharge.

Abstract: The method and system herein pertain to an EUV photon source which includes a plasma chamber filled with a gas mixture, multiple electrodes within the plasma chamber defining a plasma region and a central axis, a power supply circuit connected to the electrodes for delivering a main pulse to the electrodes for energizing the plasma around the central axis to produce an EUV beam. The system can also include a preionizer for ionizing the gas mixture in preparing to form a dense plasma around the central axis upon application of the main pulse from the power supply circuit to the electrodes. A set of baffles may be disposed along the beam path outside of the pinch region to diffuse gaseous and contaminant particulate flow emanating from the pinch region and to absorb or reflect acoustic waves emanating from the pinch region away from the pinch region.

Abstract: The invention is directed to a method for generating extreme ultraviolet (EUV) radiation based on a radiation-emitting plasma, particularly for generating EUV radiation with a wavelength around 13 nm. The object of the invention, to find a novel possibility for generating extreme ultraviolet radiation based on a radiation-emitting plasma in which the emission output of the EUV source is increased to the wavelength range above the L-absorption edge of silicon without substantially increasing the technical and monetary expenditure for plasma generation, is met in a method for generating extreme ultraviolet radiation through emission of broadband radiation from a plasma under vacuum conditions in that the plasma is generated using at least one element from V to VII in the p-block of the fifth period of the periodic table of elements. Iodine, tellurium, antimony or materials containing these elements or chemical compounds formed with these elements are preferably used.

Abstract: The invention is directed to a radiation source for generating extreme ultraviolet (EUV) radiation based on a hot, dense plasma generated by gas discharge.

Abstract: The invention is directed to a radiation source for generating extreme ultraviolet (EUV) radiation, particularly for photolithography exposure processes. The object of the invention is to find a novel possibility for realizing radiation sources for generating extreme ultraviolet (EUV) radiation which permits a uniform basic construction for ensuring beam characteristics that are reproducible over the long term and in which the source is conceived so as to be flexible with respect to specific applications.

Abstract: The invention is directed to a detector arrangement for energy measurement of pulsed x-ray radiation, particularly for monitoring the energy emitted by pulsed EUV radiation sources.

Abstract: The invention is directed to a method for generating extreme ultraviolet (EUV) radiation based on a radiation-emitting plasma, particularly for generating EUV radiation with a wavelength around 13 nm. The object of the invention, to find a novel possibility for generating extreme ultraviolet radiation based on a radiation-emitting plasma in which the emission output of the EUV source is increased to the wavelength range above the L-absorption edge of silicon without substantially increasing the technical and monetary expenditure for plasma generation, is met in a method for generating extreme ultraviolet radiation through emission of broadband radiation from a plasma under vacuum conditions in that the plasma is generated using at least one element from V to VII in the p-block of the fifth period of the periodic table of elements. Iodine, tellurium, antimony or materials containing these elements or chemical compounds formed with these elements are preferably used.

Abstract: The invention is directed to a method and an arrangement for generating extreme ultraviolet (EUV) radiation, i.e., radiation of high-energy photons in the wavelength range from 11 to 14 nm, based on a gas discharge. The object of the invention, to find a novel possibility for generating EUV radiation in which an extended life of the system is achieved with stable generation of a dense, hot plasma column, is met according to the invention in that a preionization discharge is ignited between two parallel disk-shaped flat electrodes prior to the main discharge by a surface discharge along the superficies surface of a cylindrical insulator with a plasma column generated through the gas discharge with pulsed direct voltage, which preionization discharge carries out an ionization of the working gas in the discharge chamber by means of fast charged particles.

Abstract: A detector for use with an EUV photon source emitting around 11-15 nm includes at least one multilayer mirror for reflecting the beam along an optical path include a detector element, a filter for reducing the bandwidth of the beam, and the detector element. The detector element preferably comprises a Si pn diodes with doped dead region and zero surface recombination or PtSi-nSi barrier for increasing the long term stability of the detector.