Abstract: One aspect relates to a method that includes bonding an electrically conductive element to a bonding surface of a bonding partner by increasing a temperature of a bonding section of the electrically conductive element from an initial temperature to an increased temperature by passing an electric heating current through the bonding section, and pressing the bonding section with a pressing force against the bonding surface using a sonotrode and introducing an ultrasonic vibration into the bonding section via the sonotrode such that the increased temperature of the bonding section, the ultrasonic signal in the bonding section and the pressing force are simultaneously present and cause the formation of a tight and direct bond between the bonding section and the bonding surface.

Abstract: One aspect of the invention relates to a method for producing a circuit carrier. For this purpose, an electrically insulating carrier is provided, having an upper side and also an underside opposite from the upper side. A first metal foil and a hardening material are likewise provided. Then, an upper metallization layer, which is arranged on the upper side and has a hardening area, is produced. In this case, at least one contiguous portion of the hardening area is created by at least part of the hardening material being diffused into the first metal foil.

Abstract: One aspect of the invention relates to an electronic module comprising a module housing and an electrically conductive connection element. The connection element has a first portion and a second portion, and also a shaft between the first portion and the second portion. The connection element, which is provided with a non-metallic coating in the region of the shaft, is injected together with the coating in the region of the shaft into the module housing, such that the connection element is fixed in the module housing.

Abstract: One aspect of the invention relates to an electronic module comprising a module housing and an electrically conductive connection element. The connection element has a first portion and a second portion, and also a shaft between the first portion and the second portion. The connection element, which is provided with a non-metallic coating in the region of the shaft, is injected together with the coating in the region of the shaft into the module housing, such that the connection element is fixed in the module housing.

Abstract: One aspect of the invention relates to a method for producing a circuit carrier. For this purpose, an electrically insulating carrier is provided, having an upper side and also an underside opposite from the upper side. A first metal foil and a hardening material are likewise provided. Then, an upper metallization layer, which is arranged on the upper side and has a hardening area, is produced. In this case, at least one contiguous portion of the hardening area is created by at least part of the hardening material being diffused into the first metal foil.

Abstract: A soldering method is provided. According to the method at least two sets of components are heated and soldered by heating. Each set includes a first soldering partner, a second soldering partner, and a solder. During the soldering process, the individual temperatures of each one of the sets are transmitted by a radio frequency transmitter to a receiving and control unit. The control unit controls the heating of the sets depending on the transmitted individual temperatures.

Abstract: In a method for producing a power semiconductor arrangement, an insulation carrier with a top side, a metallization, and a contact pin with a first end are provided. The metallization is attached to the top side and a target section of the metallization is determined. After the metallization is attached to the top side of the insulation carrier, the first end of the contact pin is pressed into the target section such that the first end is inserted in the target section. Thereby, an interference fit and an electrical connection are established between the first end of the contact pin and the target section of the metallization.

Abstract: In a method for producing a power semiconductor arrangement, a dielectric insulation carrier with a top side and a top metallization layer arranged on the top side are provided. Also provided are a semiconductor chip and at least one electrically conductive contact pin, each pin having a first end and an opposite second end. The semiconductor chip is sintered or diffussion soldered to the top metallization layer. Between the first end and the top metallization layer an electrically conductive connection is formed, in which electrically conductive connection material of the contact pin is in direct physical contact with the material of the top metallization layer.

Abstract: In a method for producing a power semiconductor arrangement, an insulation carrier with a top side, a metallization, and a contact pin with a first end are provided. The metallization is attached to the top side and a target section of the metallization is determined. After the metallization is attached to the top side of the insulation carrier, the first end of the contact pin is pressed into the target section such that the first end is inserted in the target section. Thereby, an interference fit and an electrical connection are established between the first end of the contact pin and the target section of the metallization.

Abstract: In a method for producing a power semiconductor arrangement, a dielectric insulation carrier with a top side and a top metallization layer arranged on the top side are provided. Also provided are a semiconductor chip and at least one electrically conductive contact pin, each pin having a first end and an opposite second end. The semiconductor chip is sintered or diffussion soldered to the top metallization layer. Between the first end and the top metallization layer an electrically conductive connection is formed, in which electrically conductive connection material of the contact pin is in direct physical contact with the material of the top metallization layer.

Abstract: A method and an apparatus for ultrasonic welding of a first workpiece to a second workpiece is disclosed. The two workpieces are clamped between a sonotrode and an anvil so that the two workpieces are in mechanical contact with each other, the first workpiece is in mechanical contact with the sonotrode and the second workpiece rests on the anvil. Fluid is introduced between the second workpiece and the anvil so that the second workpiece at least partly rests on the fluid. Ultrasonic vibrations are applied to the first workpiece by the sonotrode for a period of time.

Abstract: A method and an apparatus for ultrasonic welding of a first workpiece to a second workpiece is disclosed. The two workpieces are clamped between a sonotrode and an anvil so that the two workpieces are in mechanical contact with each other, the first workpiece is in mechanical contact with the sonotrode and the second workpiece rests on the anvil. Fluid is introduced between the second workpiece and the anvil so that the second workpiece at least partly rests on the fluid. The fluid is frozen so that the fluid forms a solid body. Ultrasonic vibrations are applied to the first workpiece by the sonotrode for a period of time.

Abstract: A soldering method is provided. According to the method at least two sets of components are heated and soldered by heating. Each set includes a first soldering partner, a second soldering partner, and a solder. During the soldering process, the individual temperatures of each one of the sets are transmitted by a radio frequency transmitter to a receiving and control unit. The control unit controls the heating of the sets depending on the transmitted individual temperatures.

Abstract: A semiconductor module having a current connection element designed for a high current carrying capability is disclosed. In one embodiment, the current connection element includes a plurality of metal layers which rest directly on one another.

Abstract: A method for producing a power semiconductor module including forming a contact between a contact region and a contact element as an ultrasonic welding contact via a sonotrode. The ultrasonic welding operation also being used for joining the contact regions with the contact ends and consequently for joining the contacts and the foot regions.

Abstract: A bonding device and method for producing a bonding connection is disclosed. One embodiment provides a bonding stamp and an ultrasonic generator coupled thereto. The ultrasonic frequency and an effective length, which is given by the distance between the lower end of the bonding stamp and the coupling location of the ultrasonic generator at the bonding stamp in the vertical direction, are coordinated with one another in such a way that the following holds true: 0.9 · n · c 2 · l ? f ? 1.1 · n · c 2 · l where c is the speed of the ultrasound in the bonding stamp at the frequency f, and n=1 or 2 or 3 or 4.

Abstract: A method for producing a power semiconductor module including forming a contact between a contact region and a contact element as an ultrasonic welding contact via a sonotrode. The ultrasonic welding operation also being used for joining the contact regions with the contact ends and consequently for joining the contacts and the foot regions.

Abstract: A semiconductor module having a current connection element designed for a high current carrying capability is disclosed. In one embodiment, the current connection element includes a plurality of metal layers which rest directly on one another.

Abstract: In a method and a corresponding apparatus for controlling and monitoring the vacuum brazing of power components and SMD components, in which the temperature of the process is controlled using an open thermocouple, which is arranged separate from the furnace heating and is integrated in a base plate serving as a heat buffer, the temperature of the process is monitored and measured directly at the point of contact between brazing material and component. The uniformity of the temperature distribution during the process is measured by means of a contactless optical measuring system.