Abstract: A readout circuit architecture and a sense amplification circuit are provided. The readout circuit architecture includes: a readout amplification unit including a first P-type transistor and a second P-type transistor; and a first offset compensation unit including a first offset compensation transistor and a second offset compensation transistor. The first P-type transistor is arranged in a first area and the second P-type transistor is arranged in a second area. When the first area and the second area are arranged at interval in a first direction, the first offset compensation transistor and the second offset compensation transistor are arranged in a third area located between the first area and the second area. When the first area and the second area are arranged adjacently in the first direction, the first offset compensation transistor is arranged in a fourth area and the second offset compensation transistor is arranged in a fifth area.

Abstract: The present disclosure relates to the field of semiconductor circuit design, and in particular, to a readout circuit layout, including: a first PMOS layout, configured to form a first PMOS transistor <P1>, wherein a source of the first PMOS transistor is connected to a first signal terminal, and the first signal terminal is configured to receive a first level signal; a first NMOS layout, configured to form a first NMOS transistor <N1>, wherein a source of the first NMOS transistor is connected to a second signal terminal, and the second signal terminal is configured to receive a second level signal; a gate of the first PMOS transistor <P1> and a gate of the first NMOS transistor <N1> are connected to a bit line, and a drain of the first PMOS transistor <P1> and a drain of the first NMOS transistor <N1> are connected to a complementary readout bit line.

Abstract: A semiconductor structure includes a well area of first conductive type, which includes: a first device area, where a first active area is formed in the first device area, a first device unit is formed in the first active area and configured to provide a first type driving current; and a second device area, connected to the first device area in a length direction of the well area of first conductive type, where a second active area is formed in the second device area, a second device unit is formed in the second active area and configured to provide a second type driving current. A current value of the second type driving current is greater than a current value of the first type driving current. A width of well area of the first device area is the same as a width of well area of the second device area.

Abstract: A word line driver circuit may at least include multiple word line drivers, each of which including a PMOS transistor and at least one NMOS transistor. The multiple word line drivers include multiple PMOS transistors and multiple NMOS transistors. The multiple PMOS transistors are arranged side by side, and in an arrangement direction of the multiple PMOS transistors, a part of the multiple NMOS transistors are located on a side of the multiple PMOS transistors, and another part of the NMOS transistors are located on another side of the multiple PMOS transistors.

Abstract: Embodiments relate to the field of semiconductors and provide a wordline driver circuit and a memory. The wordline driver circuit at least includes a first type of wordline drivers and a second type of wordline drivers, wherein each of the wordline drivers includes a PMOS transistor and an NMOS transistor. A first type of PMOS transistors in the first type of wordline drivers and a second type of PMOS transistors in the second type of wordline drivers are configured to receive different first control signals. The first type of PMOS transistors and the second type of PMOS transistors are arranged side by side, and the NMOS transistors included in the first type of wordline drivers and the NMOS transistors included in the second type of wordline drivers are positioned on the same side of the first type of PMOS transistors and the second type of PMOS transistors.

Abstract: Embodiments provide a wordline driver circuit and a memory. The wordline driver circuit at least includes a first type of wordline drivers and a second type of wordline drivers, wherein each of the wordline drivers includes a PMOS transistor and an NMOS transistor. A first type of PMOS transistors in the first type of wordline drivers and a second type of PMOS transistors in the second type of wordline drivers are configured to receive different first control signals. The first type of PMOS transistors and the second type of PMOS transistors are arranged side by side, a part of the NMOS transistors in the first type of wordline drivers and the second type of wordline drivers are positioned on a side of the first type of PMOS transistors and the second type of PMOS transistors.

Abstract: Embodiments relate to the field of semiconductors and provide a wordline driver circuit and a memory. The wordline driver circuit may at least include a plurality of wordline drivers. Each of the plurality of wordline drivers includes a corresponding PMOS transistor and an NMOS transistor, the plurality of PMOS transistors included in the plurality of wordline drivers are arranged side by side, and the plurality of NMOS transistors included in the plurality of wordline drivers are arranged side by side. In an arrangement direction of the plurality of PMOS transistors, the plurality of PMOS transistors are positioned on the same sides of the plurality of NMOS transistors.

Abstract: The invention discloses a treatment method of a chlorine-containing zinc oxide secondary material, which comprises the following steps: 1) leaching the chlorine-containing zinc oxide secondary material I through an acid solution; 2) selectively extracting zinc through di-(2-ethylhexyl)phosphoric acid (P204)-kerosene solvent; 3) implementing stripping-electrolysis zinc recovery; 4) repeating steps 1)-4); 5) taking out the raffinate obtained from the Step (4), mixing the residual taken out raffinate with chlorine-containing zinc oxide secondary material II when balance on chlorine ion input and taking out is achieved; carrying out liquid-solid separation; leaching the separated deposit through acid raffinate of the step 1); 6) after separated solution achieves preset conditions, purifying the chlorine-containing aqueous phase; 7) evaporating and concentrating to crystallize out KCl and NaCl products.

Abstract: The invention discloses a treatment method of a chlorine-containing zinc oxide secondary material, which comprises the following steps: 1) leaching the chlorine-containing zinc oxide secondary material I through an acid solution; 2) selectively extracting zinc through P204-kerosene solvent; 3) implementing stripping-electrolysis zinc recovery; 4) repeating steps 1)-4); 5) taking out the raffinate obtained from the Step (4), mixing the residual taken out raffinate with chlorine-containing zinc oxide secondary material II when balance on chlorine ion input and taking out is achieved; carrying out liquid-solid separation; leaching the separated deposit through acid raffinate of the step 1); 6) after separated solution achieves preset conditions, purifying the chlorine-containing aqueous phase; 7) evaporating and concentrating to crystallize out KCl and NaCl products.