Abstract: A method for manufacturing a structure comprising membranes overhanging cavities, comprises: a) forming cavities opening at a front face of a support substrate, the cavities having a depth and an area, and being spaced apart by a spacing; b) assembling, by way of direct bonding, a donor substrate on the support substrate to seal the cavities under vacuum, the direct bonding being hydrophilic and involving a given number of water monolayers at a contact interface between the substrates; and c) transferring a thin layer from the donor substrate onto the support substrate, the thin layer comprising the membranes. A specific area is defined around each cavity in the plane of the contact interface and is expressed as a function of half of the spacing. The area, the depth of each cavity, and the specific area are defined in step a) to satisfy a particular relationship.

Abstract: A method for transferring a semiconductor layer from a donor substrate to a receiver substrate having an open cavity includes forming an embrittlement plane in the donor substrate, making, by bringing the donor substrate and the receiver substrate into contact, a packaging in which the cavity is buried, and separating the packaging by fracturing along the embrittlement plane. The separating causes a transfer of the semiconductor layer to the receiver substrate and a sealing of the cavity by the semiconductor layer. The method also includes, prior to making the packaging, implanting diffusing species into the donor substrate or into the receiver substrate and, subsequently to making the packaging and prior to separating the packaging, diffusing the species into the cavity.

Abstract: The invention relates to a method for transferring a semiconductor layer (2) from a donor substrate (1) comprising a weakening plane (F) to a receiver substrate (3) comprising a bonding face (4) that has open cavities (C). This method comprises the implementation, by putting the donor substrate and the bonding face of the receiver substrate in contact, of an assembly wherein said cavities are buried and the separation of the assembly by fracture along the weakening plane. The bonding face of the receiver substrate includes, apart from the open cavities, a bonding surface that comes into contact with the donor substrate when the assembly is implemented. Said bonding surface comprising a region devoid of cavities (5, 6) one dimension of which is at least 100 ?m and which has a surface area of at least 1 mm2, and an intercavity space that occupies from 15 to 50% of the bonding face of the receiver substrate.

Abstract: The invention relates to a method for transferring a semiconductor layer from a donor substrate to a receiver substrate having an open cavity, comprising the steps of forming an embrittlement plane in the donor substrate, making, by bringing the donor substrate and the receiver substrate into contact, a packaging in which said cavity is buried, and separating the packaging by fracturing along the embrittlement plane, said separating causing a transfer of the semiconductor layer to the receiver substrate and a sealing of the cavity by the semiconductor layer. This method comprises, prior to making the packaging, a step of implanting diffusing species into the donor substrate or into the receiver substrate and, subsequently to making the packaging and prior to separating the packaging, a step of diffusing said species into the cavity.