Patents by Inventor Guillaume Bourgeois
Guillaume Bourgeois has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240099164Abstract: A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and a third insulating layer interposed between the first and second layers, in a material having a density higher than that of the material of the second layer.Type: ApplicationFiled: September 14, 2023Publication date: March 21, 2024Applicant: Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Guillaume Bourgeois, Marie-Claire Cyrille
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Publication number: 20240099168Abstract: A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and first stack comprising a third encapsulation layer coating the side faces of the second layer and a fourth encapsulation layer coating the third layer and being in a material having a lower density than that of the material of the third layer.Type: ApplicationFiled: September 14, 2023Publication date: March 21, 2024Applicant: Commissariat á I'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Guillaume Bourgeois, Marie-Claire Cyrille
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Patent number: 11800820Abstract: A method for programming a phase change memory including a first layer of a phase change material capable of switching between a crystalline and an amorphous state and vice versa, the method including applying a programming current through the first layer so that an evolution of the areal density of this current as a function of time t decreases from a first level, between a first time and a second time, following a first evolution in time respecting, or being close to J 0 ? ( t ) = K t where K is a constant.Type: GrantFiled: November 22, 2021Date of Patent: October 24, 2023Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Anna-Lisa Serra, Guillaume Bourgeois, Chiara Sabbione
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Publication number: 20220165945Abstract: A phase change memory device comprising, between first and second electrodes: a first layer of a phase change material; and a second germanium nitride-based layer, in contact with the first layer, the nitrogen percentage in the second layer being between 20% and 35%, and the second layer having a channel of the phase change material of the first layer passing through it.Type: ApplicationFiled: November 22, 2021Publication date: May 26, 2022Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Chiara Sabbione, Guillaume Bourgeois, Anna-Lisa Serra
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Publication number: 20220165946Abstract: A method for programming a phase change memory including a first layer of a phase change material capable of switching between a crystalline and an amorphous state and vice versa, the method including applying a programming current through the first layer so that an evolution of the areal density of this current as a function of time t decreases from a first level, between a first time and a second time, following a first evolution in time respecting, or being close to J 0 ? ( t ) = K t where K is a constant.Type: ApplicationFiled: November 22, 2021Publication date: May 26, 2022Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Anna-Lisa Serra, Guillaume Bourgeois, Chiara Sabbione
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Patent number: 9450013Abstract: A planar photodiode array including a useful layer made of CdxHg1-xTe. The useful layer includes at least two superimposed doped layers, each interface between two doped layers forming a single PN junction; the useful layer has at least one separation region, extending from the upper face of the useful layer, and separating at least two useful volumes while going through the PN junction; and beyond a predetermined depth in the useful layer, the average cadmium concentration in the useful volumes is less than the average cadmium concentration in the separation region.Type: GrantFiled: July 9, 2015Date of Patent: September 20, 2016Assignee: Commissariat a l'energie atomique et aux energies alternativesInventors: Laurent Mollard, Francois Boulard, Guillaume Bourgeois
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Patent number: 9397244Abstract: A photodiodes array includes a useful layer made of CdxHg1-xTe; first doped zones each forming a PN junction with a second doped zone surrounding the first doped zones. The array includes regions located between two PN junctions, with a cadmium concentration gradient decreasing from the upper face to the lower face of the useful layer. A method of making such a photodiodes array includes producing, on the upper face of the useful layer, of a structured layer with at least one through opening, and with a cadmium concentration higher than the cadmium concentration in the useful layer; annealing the useful layer covered by the structured layer, with diffusion of cadmium atoms of the structured layer, from the structured layer to the useful layer; producing at least two PN junctions in the useful layer.Type: GrantFiled: April 14, 2015Date of Patent: July 19, 2016Assignee: Commissariat a' l'energie atomique et aux energies alternativesInventors: Laurent Mollard, Guillaume Bourgeois, Gerard Destefanis
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Publication number: 20160020241Abstract: A planar photodiode array including a useful layer made of CdxHg1-xTe. The useful layer includes at least two superimposed doped layers, each interface between two doped layers forming a single PN junction; the useful layer has at least one separation region, extending from the upper face of the useful layer, and separating at least two useful volumes while going through the PN junction; and beyond a predetermined depth in the useful layer, the average cadmium concentration in the useful volumes is less than the average cadmium concentration in the separation region.Type: ApplicationFiled: July 9, 2015Publication date: January 21, 2016Applicant: Commissariat a L'Energie Atomique et aux Energies AlternativesInventors: Laurent MOLLARD, Francois Boulard, Guillaume Bourgeois
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Publication number: 20150303322Abstract: A photodiodes array includes a useful layer made of CdxHg1-xTe; the first doped zones each forming a PN junction with a second doped zone surrounding the first doped zones. The array includes regions located between two PN junctions, with a cadmium concentration gradient decreasing from the upper face to the lower face of the useful layer. A method of making such a photodiodes array includes producing, on the upper face of the useful layer, of a structured layer with at least one through opening, and with a cadmium concentration higher than the cadmium concentration in the useful layer; annealing the useful layer covered by the structured layer, with diffusion of cadmium atoms of the structured layer, from the structured layer to the useful layer; producing at least two PN junctions in the useful layer.Type: ApplicationFiled: April 14, 2015Publication date: October 22, 2015Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Laurent MOLLARD, Guillaume BOURGEOIS, Gerard DESTEFANIS
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Patent number: 8377212Abstract: A chamber for annealing a semi-conductor material of II-VI type having a first area for storing an element of group II of the periodic table and a second area designed to receive the semi-conductor material of II-VI type. The chamber s equipped with a separating partition at the level of an intermediate area. This separating partition is provided with a passage aperture equipped with gas anti-reverse flow means to ensure one-way passage of the element of group II of the periodic table, in vapor phase, from the first area to the second area. This chamber is heated by heating means enabling the two areas to be heated independently.Type: GrantFiled: May 27, 2010Date of Patent: February 19, 2013Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Laurent Mollard, Guillaume Bourgeois, Franck Henry, Bernard Pelliciari
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Publication number: 20100304576Abstract: A chamber for annealing a semi-conductor material of II-VI type having a first area for storing an element of group II of the periodic table and a second area designed to receive the semi-conductor material of II-VI type. The chamber s equipped with a separating partition at the level of an intermediate area. This separating partition is provided with a passage aperture equipped with gas anti-reverse flow means to ensure one-way passage of the element of group II of the periodic table, in vapor phase, from the first area to the second area. This chamber is heated by heating means enabling the two areas to be heated independently.Type: ApplicationFiled: May 27, 2010Publication date: December 2, 2010Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Laurent Mollard, Guillaume Bourgeois, Franck Henry, Bernard Pelliciari