Abstract: A vertical transistor includes two portions of a gate conductor that extend within a layer of insulator. An opening extending through the later of insulator includes source, channel and drain regions form by epitaxy operations. A thickness of the portions of the gate conductor decreases in the vicinity of the channel region.

Abstract: A vertical transistor includes two portions of a gate conductor that extend within a layer of insulator. An opening extending through the later of insulator includes source, channel and drain regions form by epitaxy operations. A thickness of the portions of the gate conductor decreases in the vicinity of the channel region.

Abstract: A vertical transistor includes two portions of a gate conductor that extend within a layer of insulator. An opening extending through the later of insulator includes source, channel and drain regions form by epitaxy operations. A thickness of the portions of the gate conductor decreases in the vicinity of the channel region.

Abstract: A vertical transistor includes two portions of a gate conductor that extend within a layer of insulator. An opening extending through the later of insulator includes source, channel and drain regions form by epitaxy operations. A thickness of the portions of the gate conductor decreases in the vicinity of the channel region.

Abstract: An integrated circuit includes FDSOI-type MOS transistors formed inside and on top of a semiconductor layer resting on an insulating layer. The transistors include a logic MOS transistor of a first conductivity type, a logic MOS transistor of a second conductivity type, and an analog MOS transistor of the first conductivity type, A gate stack of the logic transistors successively includes a gate insulator layer, a first titanium nitride layer, a lanthanum layer, and a second titanium nitride layer. A gate stack of the analog transistor includes the gate insulator layer, the lanthanum layer and the second titanium nitride layer but not the first titanium nitride layer.