Abstract: An integrated FinFET and deep trench capacitor structure and methods of manufacture are provided. The method includes forming a plurality of fin structures from a substrate material. The method further includes forming a deep trench capacitor structure, contacting at least selected fin structures. The method further includes forming a liner over the deep trench capacitor structure. The method further includes forming replacement gate structures with the liner over the deep trench capacitor structure protecting the deep trench capacitor structure during deposition and etching processes.

Abstract: The present invention relates generally to semiconductor fabrication lithography and, more particularly, to a method and composition for reducing post-development defects and residues that may remain on a photoresist after development of the photoresist without causing substantial damage to the photoresist. The method may include rinsing the photoresist and the semiconductor device with ozonated acidified conductive water composed of a combination of ozone and a gaseous acid dissolved in deionized water.