Patents by Inventor Guillaume Jacques Saint-Girons

Guillaume Jacques Saint-Girons has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • InGaAs/GaAs lasers on silicon produced by LEPECVD and MOCVD
    Patent number: 7588954
    Abstract: Method for making an InGaAs/GaAs quantum well laser (10) on a Silicon substrate (15.1). The method comprises the steps: Formation of a virtual Germanium substrate (15) on the Silicon substrate (15.1) by means of a low-energy plasma-enhanced chemical vapour deposition (LEPECVD). The virtual Germanium substrate (15) comprises a pure Germanium layer (15.3). Formation of a Gallium Arsenide structure on the virtual Germanium substrate (15) by means of a metal organic chemical vapour deposition process.
    Type: Grant
    Filed: September 4, 2004
    Date of Patent: September 15, 2009
    Assignee: Epispeed S.A.
    Inventors: Hans Von Kaenel, Isabelle Sagnes, Guillaume Jacques Saint-Girons, Sophie Bouchoule
  • Ingaas/gaas lasers on-silicon produced by-lepecvd and mocvd
    Publication number: 20070164311
    Abstract: Method for making an InGaAs/GaAs quantum well laser (10) on a Silicon substrate (15.1). The method comprises the steps: Formation of a virtual Germanium substrate (15) on the Silicon substrate (15.1) by means of a low-energy plasma-enhanced chemical vapour deposition (LEPECVD). The virtual Germanium substrate (15) comprises a pure Germanium layer (15.3). Formation of a Gallium Arsenide structure on the virtual Germanium substrate (15) by means of a metal organic chemical vapour deposition process.
    Type: Application
    Filed: September 4, 2004
    Publication date: July 19, 2007
    Inventors: Hans Von Kaenel, Isabelle Sagnes, Guillaume Jacques Saint-Girons, Sophie Bouchoule