Abstract: The disclosure relates to a header bag for packaging at least one medical device, including at least one sheet configured to be sealed to form an enclosure for the at least one medical device, the at least one sheet including at least an inner layer and an outer layer, the inner and outer layers being impervious to gas so that a vacuum can be created in a volume extending between the inner and outer layers, wherein the header bag further includes a pressure sensor arranged between the inner and outer layers and an RFID tag configured to communicate with the pressure sensor.

Abstract: The present disclosure relates to a stopper configured to be positioned inside a barrel of an injection device for injecting at least one composition, said stopper including: a gasket including a proximal end, a distal end, a lateral wall, and a through hole extending from the proximal end to the distal end, an insert inserted in the through hole, wherein the stopper is adapted to deform between: a closed configuration wherein the gasket cooperates with the insert to hermetically close the through hole, for preventing flow of the composition between the proximal end and the distal end of the gasket, and an open configuration wherein the gasket cooperates with the insert to open a fluidic pathway in the through hole between the proximal end and the distal end of the gasket for allowing flow of the composition

Abstract: Microelectronic structure comprising at least one movable mass that is mechanically connected to a first mechanical element by a first mechanically linking connector and to a second mechanical element (24) by electrically conductive second mechanically linking connector, and a device for electrically biasing the second mechanically linking connector, the second mechanically linking connector being such that they are the seat of a thermo-piezoresistive effect, the second linking connector and the movable mass being placed with respect to each other so that a movement of the movable mass applies a mechanical stress to the second linking connector, wherein the electrically biasing device are DC voltage biasing device and form, with at least the second mechanically linking connector, a thermo-piezoresistive feedback electric circuit.

Abstract: The invention relates to a valve stopper configured to be positioned inside a barrel of an injection device for injecting a composition through a distal, including: a membrane having a proximal and distal face, the membrane being configured to separate a, distal chamber of the barrel from a proximal chamber; a lateral wall extending from the membrane to define a distal cavity, the lateral wall having a circumferential sealing surface configured to sealingly engage the inner surface of the barrel; where the proximal face presents a concave shape and the membrane includes a notch extending through the membrane between the proximal and distal face, being configured to selectively create a fluid path through the membrane from the proximal face to the distal face depending on the pressure exerted by a composition onto the proximal face of the membrane for transferring fluid only from the second chamber to the first.

Abstract: A microdevice (100) comprising a movable element (111) capable of moving relative to a fixed part (115), produced in first and second layers of material (104, 106) arranged one above the other such that the movable element comprises a portion (112) of the first layer and a portion (118) of the second layer secured to each other, and wherein the movable element is suspended from the fixed part by a suspension structure (121) formed in the first and/or second layer of material.

Abstract: A microdevice (100) comprising a movable element (111) capable of moving relative to a fixed part (115), produced in first and second layers of material (104, 106) arranged one above the other such that the movable element comprises a portion (112) of the first layer and a portion (118) of the second layer secured to each other, and wherein the movable element is suspended from the fixed part by a suspension structure (121) formed in the first and/or second layer of material.

Abstract: The invention relates to a measurement device comprising a suspended semiconductor wire, a first control circuit designed to apply and/or read a first electrical signal between first and second ends of the suspended semiconductor wire and a second control circuit designed to apply and/or read a second electrical signal between first and second intermediate nodes of the suspended semiconductor wire.

Abstract: A microelectromechanical structure with electrothermal actuation including a fixed part, a moveable part, a first electrothermal actuating beam enabling an electric current to flow from the fixed part to the moveable part and a second electrothermal actuating beam enabling an electric current to flow from the fixed part to the moveable part, the beams being mechanically connected to the moveable part enabling a displacement of the moveable part by electrothermal actuation, an electrically conductive connecting element connecting the moveable part to the fixed part, a first connector for connecting the first actuating beam to a first polarisation source and a second connector for connecting the second actuating beam to a second polarisation source, such that the first and the second can be polarised differently and separately.

Abstract: An electrothermally actuated microelectromechanical and/or nanoelectromechanical structure including a stationary portion, at least one portion which is movable relative to the stationary portion, at least one electrothermal actuation beam which makes it possible to cause an electric current to flow from the stationary portion to the movable portion, is mechanically connected to the movable portion and is intended to move the movable portion relative to the stationary portion by electrothermal actuation, and at least one electrically conductive connection element electrically connecting the movable portion to the stationary portion, the actuation beam having a thickness of no greater than half one thickness of the movable portion and no greater than half one thickness of the connection element.

Abstract: Microelectronic structure comprising a mobile mass mechanically linked to a first and to a second mechanical element by first and second mechanical linking device respectively, a polarisation source for the second mechanical linking device. The second mechanical linking means comprises two linking elements and a thermal reservoir placed between the linking elements, where at least one of the linking elements is made of piezoresistive material, where at least one of the first and second linking elements exhibit thermoelasticity properties. The thermal reservoir exhibits a thermal capacity which is different from those of the linking elements. The second linking device and the mobile mass are arranged relative to each other such that displacement of the mobile mass applies a mechanical stress to the second linking means.

Abstract: The invention relates to a measurement device comprising a suspended semiconductor wire, a first control circuit designed to apply and/or read a first electrical signal between first and second ends of the suspended semiconductor wire and a second control circuit designed to apply and/or read a second electrical signal between first and second intermediate nodes of the suspended semiconductor wire.

Abstract: Microelectronic structure comprising at least one movable mass that is mechanically connected to a first mechanical element by a first mechanically linking connector and to a second mechanical element (24) by electrically conductive second mechanically linking connector, and a device for electrically biasing the second mechanically linking connector, the second mechanically linking connector being such that they are the seat of a thermo-piezoresistive effect, the second linking connector and the movable mass being placed with respect to each other so that a movement of the movable mass applies a mechanical stress to the second linking connector, wherein the electrically biasing device are DC voltage biasing device and form, with at least the second mechanically linking connector, a thermo-piezoresistive feedback electric circuit.

Abstract: An electrothermally actuated microelectromechanical and/or nanoelectromechanical structure including a stationary portion, at least one portion which is movable relative to the stationary portion, at least one electrothermal actuation beam which makes it possible to cause an electric current to flow from the stationary portion to the movable portion, is mechanically connected to the movable portion and is intended to move the movable portion relative to the stationary portion by electrothermal actuation, and at least one electrically conductive connection element electrically connecting the movable portion to the stationary portion, the actuation beam having a thickness of no greater than half one thickness of the movable portion and no greater than half one thickness of the connection element.

Abstract: Microelectronic structure comprising a mobile mass mechanically linked to a first and to a second mechanical element by first and second mechanical linking device respectively, a polarisation source for the second mechanical linking device. The second mechanical linking means comprises two linking elements and a thermal reservoir placed between the linking elements, where at least one of the linking elements is made of piezoresistive material, where at least one of the first and second linking elements exhibit thermoelasticity properties. The thermal reservoir exhibits a thermal capacity which is different from those of the linking elements. The second linking device and the mobile mass are arranged relative to each other such that displacement of the mobile mass applies a mechanical stress to the second linking means.

Abstract: A pressure sensor made of semiconductor material, the sensor comprising a box defining a housing under a secondary vacuum, at least one resonator received in the housing and suspended by flexible beams from at least one elastically deformable diaphragm closing the housing that also contains means for exciting the resonator in order to set the resonator into vibration and detector means for detecting a vibration frequency of the resonator. The detector means comprise at least a first suspended piezoresistive strain gauge having one end secured to one of the beams and one end secured to the diaphragm. The resonator and the first strain gauge are arranged to form zones of doping that are substantially identical in kind and in concentration.

Abstract: A microelectromechanical structure with electrothermal actuation including a fixed part, a moveable part, a first electrothermal actuating beam enabling an electric current to flow from the fixed part to the moveable part and a second electrothermal actuating beam enabling an electric current to flow from the fixed part to the moveable part, the beams being mechanically connected to the moveable part enabling a displacement of the moveable part by electrothermal actuation, an electrically conductive connecting element connecting the moveable part to the fixed part, a first connector for connecting the first actuating beam to a first polarisation source and a second connector for connecting the second actuating beam to a second polarisation source, such that the first and the second can be polarised differently and separately.

Abstract: A pressure sensor made of semiconductor material, the sensor comprising a box defining a housing under a secondary vacuum, at least one resonator received in the housing and suspended by flexible beams from at least one elastically deformable diaphragm closing the housing that also contains means for exciting the resonator in order to set the resonator into vibration and detector means for detecting a vibration frequency of the resonator. The detector means comprise at least a first suspended piezoresistive strain gauge having one end secured to one of the beams and one end secured to the diaphragm. The resonator and the first strain gauge are arranged to form zones of doping that are substantially identical in kind and in concentration.