Abstract: Disclosed herein are techniques for micro-light emitting diodes (micro-LEDs). According to certain embodiments, a micro-LED device includes a micro-LED comprising a semiconductor mesa structure configured to emit light, a spacer layer on the micro-LED, and a micro-lens on the spacer layer and configured to extract and collimate the light emitted by the micro-LED, where a thickness of the spacer layer is selected such that a focal point of the micro-lens is at a front surface of the semiconductor mesa structure.

Abstract: A lateral micro-light emitting diode includes a first semiconductor layer, an active region on the first semiconductor layer and including one or more quantum well layers configured to emit light, a p-type semiconductor region on a first lateral region (e.g., a central region) of the active region, and an n-type semiconductor region on a second lateral region (e.g., peripheral regions) of the active region, where the n-type semiconductor region and the p-type semiconductor region are on a same side of the active region.

Abstract: A lateral micro-light emitting diode includes a first semiconductor layer, an active region on the first semiconductor layer and including one or more quantum well layers configured to emit light, a p-type semiconductor region on a first lateral region (e.g., a central region) of the active region, and an n-type semiconductor region on a second lateral region (e.g., peripheral regions) of the active region, where the n-type semiconductor region and the p-type semiconductor region are on a same side of the active region.

Abstract: A light source includes an epitaxial layer stack that includes an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer. The epitaxial layer stack includes a two-dimensional (2-D) array of mesa structures formed therein. The light source further includes an array of p-contacts electrically coupled to the p-type semiconductor layer of the 2-D array of mesa structures, a metal layer in regions surrounding individual mesa structures of the 2-D array of mesa structures, and a plurality of n-contacts coupling the metal layer to the n-type semiconductor layer at a plurality of locations between the individual mesa structures of the 2-D array of mesa structures.

Abstract: A light source includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the p-type semiconductor layer and the n-type semiconductor layer and configured to emit light. The active region includes a plurality of barrier layers and one or more quantum well layers. The plurality of barrier layers of the active region includes at least one n-doped barrier layer that includes an n-type dopant. The active region is characterized by a lateral linear dimension equal to or less than about 10 ?m. The n-type dopant includes, for example, silicon, selenium, or tellurium.