Abstract: A microelectronic device is provided, including: a support; and an electrically conductive element including in a stack and successively above a first face of the support, a first layer based on a metal and a second layer, in contact with the first layer, based on a material selected from among MoSi and WSiy. A method for manufacturing the microelectronic device is also provided.

Abstract: An electroacoustic device includes, stacked in a direction a silicon-based substrate, a first electrode, a piezoelectric layer with the basis of a perovskite taken from among lithium niobate LiNbO3, lithium tantalum LiTaO3, or an Li(Nb,Ta)O3 alloy, on the first electrode, a second electrode disposed on the piezoelectric layer. Advantageously, the first electrode is made of a nitride-based electrically conductive refractory material, such as TiN, VN, TaN. The invention also relates to a method for producing such a device.

Abstract: A method for forming a lithium niobate- or lithium tantalum-based (LN/LT) layer includes providing a silicon-based substrate, forming nucleation layer on the substrate, and forming the LN/LT layer by epitaxy on the nucleation layer. The nucleation layer is chosen based upon a III-N material. The nucleation layer may be used in a surface acoustic wave device.

Abstract: A microelectronic device is provided, including: a support; and an electrically conductive element including in a stack and successively above a first face of the support, a first layer based on a metal and a second layer, in contact with the first layer, based on a material selected from among MoSi and WSiy. A method for manufacturing the microelectronic device is also provided.

Abstract: A piezoelectric device includes at least one upper layer of piezoelectric material based on alkali metal niobate and one lower layer of metal located above a substrate, wherein it comprises a barrier layer of material that is a barrier to the diffusion of alkali metals into the metal and that is inert to the alkali metals of the niobite, the barrier material layer being located between the lower layer of metal and the upper layer of piezoelectric material. A process for producing the device is also provided.

Abstract: A bonding between a first substrate and a second substrate, the method includes the steps of: a) providing the first substrate and the second substrate, b) forming a first bonding layer having tungsten oxide on the first substrate and a second bonding layer having tungsten oxide on the second substrate, at least one of the first bonding layer and of the second bonding layer including a third element M so as to form an MWxOy-type alloy, the atomic content of M in the composition of the alloy being between 0.5 and 20% and preferably between 1 and 10%, c) carrying out a direct bonding between the first bonding layer and the second bonding layer, and d) performing a heat treatment at a temperature greater than 250° C.

Abstract: The electrode for a structure of Metal-Insulator-Metal type is formed by a stack successively comprising a gold layer, a barrier layer made from electrically conducting oxide and a platinum layer. The electrically conducting oxide is advantageously a noble metal oxide, and preferentially ruthenium oxide. The electrode is arranged on a substrate. The gold layer of the electrode is separated from the substrate by an adhesion layer made from titanium dioxide. The electrode is used to fabricate a capacitor of Metal-Insulator-Metal type.

Abstract: A bonding between a first substrate and a second substrate, the method includes the steps of: a) providing the first substrate and the second substrate, b) forming a first bonding layer having tungsten oxide on the first substrate and a second bonding layer having tungsten oxide on the second substrate, at least one of the first bonding layer and of the second bonding layer including a third element M so as to form an MWxOy-type alloy, the atomic content of M in the composition of the alloy being between 0.5 and 20% and preferably between 1 and 10%, c) carrying out a direct bonding between the first bonding layer and the second bonding layer, and d) performing a heat treatment at a temperature greater than 250° C.

Abstract: The electrode for a structure of Metal-Insulator-Metal type is formed by a stack successively comprising a gold layer, a barrier layer made from electrically conducting oxide and a platinum layer. The electrically conducting oxide is advantageously a noble metal oxide, and preferentially ruthenium oxide. The electrode is arranged on a substrate. The gold layer of the electrode is separated from the substrate by an adhesion layer made from titanium dioxide. The electrode is used to fabricate a capacitor of Metal-Insulator-Metal type.

Abstract: A treatment method for a getter material is provided, including forming a protective layer on the thin layer getter material by performing at least one oxidation and/or nitriding step of the thin layer getter material conducted under dry atmosphere of dioxygen and/or dinitrogen, wherein the protective layer is composed of oxide and/or nitride of the thin layer getter material, and wherein a thickness of the protective layer is between approximately 1 nm and 10 nm.

Abstract: A treatment method for a getter material, comprising at least one oxidation and/or nitriding step of getter material conducted under dry atmosphere of dioxygen and/or dinitrogen at pressure greater than approximately 10?2 mbar and at a temperature between approximately 50° C. and 120° C. and over a period between approximately 1 minute and 10 minutes, forming a protective layer composed of oxide and/or nitride of getter material.