Patents by Inventor Guillaume Saint-Girons

Guillaume Saint-Girons has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8994109
    Abstract: A method for preparing a multilayer substrate includes the step of deposing an epitaxial ?-Al2O3 Miller index (001) layer on a Si Miller index (001) substrate.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: March 31, 2015
    Assignees: STMicroelectronics SA, Centre National de la Recherche Scientifique, Ecole Centrale de Lyon
    Inventors: Clement Merckling, Mario El-Kazzi, Guillaume Saint-Girons, Guy Hollinger
  • Publication number: 20130200440
    Abstract: A method for preparing a multilayer substrate includes the step of deposing an epitaxial ?-Al2O3 Miller index (001) layer on a Si Miller index (001) substrate.
    Type: Application
    Filed: March 15, 2013
    Publication date: August 8, 2013
    Applicants: STMICROELECTRONICS S.A., ECOLE CENTRALE DE LYON, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE -CNRS
    Inventors: Clement Merckling, Mario El-Kazzi, Guillaume Saint-Girons, Guy Hollinger
  • Patent number: 8426261
    Abstract: A method for preparing a multilayer substrate includes the step of deposing an epitaxial ?-Al2O3 Miller index (001) layer on a Si Miller index (001) substrate.
    Type: Grant
    Filed: August 28, 2007
    Date of Patent: April 23, 2013
    Assignees: STMicroelectronics S.A., Centre National de la Recherche Scientifique, Ecole Centrale de Lyon
    Inventors: Clément Merckling, Mario El-Kazzi, Guillaume Saint-Girons, Guy Hollinger
  • Patent number: 8389995
    Abstract: A method for producing a solid-state semiconducting structure, includes steps in which: (i) a monocrystalline substrate is provided; (ii) a monocrystalline oxide layer is formed, by epitaxial growth, on the substrate; (iii) a bonding layer is formed by steps in which: (a) the impurities are removed from the surface of the monocrystalline oxide layer; (b) a semiconducting bonding layer is deposited by slow epitaxial growth; and (iv) a monocrystalline semiconducting layer is formed, by epitaxial growth, on the bonding layer so formed. The solid-state semiconducting heterostructures so obtained are also described.
    Type: Grant
    Filed: September 17, 2008
    Date of Patent: March 5, 2013
    Assignee: Centre National de la Recherche Scientifique (C.N.R.S.)
    Inventors: Guillaume Saint-Girons, Ludovic Largeau, Gilles Patriarche, Philippe Regreny, Guy Hollinger
  • Publication number: 20100301420
    Abstract: A method for preparing a multilayer substrate includes the step of deposing an epitaxial ?-Al2O3 Miller index (001) layer on a Si Miller index (001) substrate.
    Type: Application
    Filed: August 28, 2007
    Publication date: December 2, 2010
    Inventors: Clément Merckling, Mario El-Kazzi, Guillaume Saint-Girons, Guy Hollinger
  • Publication number: 20100289063
    Abstract: A method for producing a solid-state semiconducting structure, includes steps in which: (i) a monocrystalline substrate is provided; (ii) a monocrystalline oxide layer is formed, by epitaxial growth, on the substrate; (iii) a bonding layer is formed by steps in which: (a) the impurities are removed from the surface of the monocrystalline oxide layer; (b) a semiconducting bonding layer is deposited by slow epitaxial growth; and (iv) a monocrystalline semiconducting layer is formed, by epitaxial growth, on the bonding layer so formed. The solid-state semiconducting heterostructures so obtained are also described.
    Type: Application
    Filed: September 17, 2008
    Publication date: November 18, 2010
    Applicant: Centre Natinal De La Recherche Scientifique (C.N.R.S)
    Inventors: Guillaume Saint-Girons, Ludovic Largeau, Gilles Patriarche, Philippe Regreny, Guy Hollinger